SI1869DH-T1-E3Alternatives & Equivalent Parts

SI1869DH-T1-E3 is marked OBSOLETE. Compare the equivalents below, check each part's lifecycle, and request a quote on a suitable replacement.

About SI1869DH-T1-E3

SI1869DH-T1-E3 is a MOSFET (N-Channel) component manufactured by Vishay. It comes in a SOT23 (6-Pin) package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSI1869DH-T1-E3SourcePDTB113ZTQS6M3TRTPIC6595DWBSS8402DW-7-FMIC5891YWM
ManufacturerVishayNexperiaROHM SemiconductorTexas InstrumentsDiodes Inc.Microchip
Package TypeSOT23 (6-Pin)SOT23 (3-Pin)SOT23 (6-Pin)Small Outline PackagesSOT23 (6-Pin)Small Outline Packages
Pin Count63620616
Temperature Range—-65.0°C ~ 150.0°C~ 150.0°C-40.0°C ~ 125.0°C-55.0°C ~ 150.0°C-40.0°C ~ 85.0°C
Price$0.3640$0.6691$0.1770$1.1845$0.0876$1.6416
StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleOBSOLETEACTIVEOBSOLETEOBSOLETEACTIVEACTIVE
Electrical Parameters
YTEOL070079
Analog IC - Other TypeLoad switch—————
Peak Reflow Temperature (Cel)260260260260260260
Terminal FinishMatte Tin (Sn)TINTin/Silver/Copper (Sn/Ag/Cu)Nickel/Palladium/Gold (Ni/Pd/Au)MATTE TINMatte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)303010303040
Date Of Intro—2017-02-01————
Additional Feature—BUILT-IN BIAS RESISTOR RATIO IS 10————
Collector Current-Max (IC)—0.5 A————
Collector-Base Capacitance-Max—11 pF————
Collector-Emitter Voltage-Max—50 V————
Configuration—SINGLE WITH BUILT-IN RESISTORSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE—SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE—
DC Current Gain-Min (hFE)—70————
JEDEC-95 Code—TO-236AB————
JESD-30 Code—R-PDSO-G3R-PDSO-G6R-PDSO-G20R-PDSO-G6R-PDSO-G16
JESD-609 Code—e3e1e4e3e3
Number of Elements—12—2—
Package Body Material—PLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package Shape—RECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULAR
Package Style—SMALL OUTLINESMALL OUTLINESMALL OUTLINESMALL OUTLINESMALL OUTLINE
Polarity/Channel Type—PNPN-CHANNEL AND P-CHANNEL—N-CHANNEL AND P-CHANNEL—
Power Dissipation-Max (Abs)—0.25 W1.25 W—0.2 W—
Reference Standard—IEC-60134————
Surface Mount—YESYESYESYESYES
Terminal Form—GULL WINGGULL WINGGULL WINGGULL WINGGULL WING
Terminal Position—DUALDUALDUALDUALDUAL
Transistor Application—SWITCHINGSWITCHING—SWITCHING—
Transistor Element Material—SILICONSILICON—SILICON—
VCEsat-Max—0.3 V————
Pbfree Code——Yes—Yes—
Factory Lead Time——16 Weeks—12 Weeks8 Weeks
DS Breakdown Voltage-Min——30 V—60 V—
Drain Current-Max (ID)——1.5 A—0.115 A—
Drain-source On Resistance-Max——0.245 Ω—7.5 Ω—
FET Technology——METAL-OXIDE SEMICONDUCTOR—METAL-OXIDE SEMICONDUCTOR—
Operating Mode——ENHANCEMENT MODE—ENHANCEMENT MODE—
Qualification Status——Not QualifiedNot QualifiedNot QualifiedNot Qualified
Built-in Protections———TRANSIENT—TRANSIENT
Driver Number of Bits———8—8
Input Characteristics———SCHMITT TRIGGER—STANDARD
Interface IC Type———SIPO BASED PERIPHERAL DRIVER—BUFFER OR INVERTER BASED PERIPHERAL DRIVER
Number of Channels———8——
Number of Functions———8—1
Output Characteristics———OPEN-DRAIN—OPEN-EMITTER
Output Current Flow Direction———SINK—SOURCE
Output Current-Max———0.5 A——
Output Peak Current Limit-Nom———2 A——
Output Polarity———TRUE—TRUE
Package Equivalence Code———SOP20,.4—SOP16,.40
Supply Current-Max———5 mA—3 mA
Supply Voltage-Max———5.5 V—12 V
Supply Voltage-Min———4.5 V—5 V
Supply Voltage-Nom———5 V——
Technology———BIPOLAR—BICMOS
Temperature Grade———AUTOMOTIVE—INDUSTRIAL
Terminal Pitch———1.27 mm—1.27 mm
Turn-off Time———0.15 µs—10 µs
Turn-on Time———0.625 µs—2 µs
## TPIC6595DW Alternates Showing results———Image——
Feedback Cap-Max (Crss)————5 pF—
Manufacturer Package Code—————SOIC-16
Supply Voltage1-Nom—————50 V
## MIC5891YWM Alternates Showing results—————Image

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 5 alternatives for SI1869DH-T1-E3 — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for SI1869DH-T1-E3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating SI1869DH-T1-E3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to SI1869DH-T1-E3?

Known equivalents for SI1869DH-T1-E3 include PDTB113ZT, QS6M3TR, TPIC6595DW. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of SI1869DH-T1-E3?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify SI1869DH-T1-E3 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.