SI1012CR-T1-GE3Alternatives & Equivalent Parts

About SI1012CR-T1-GE3

SI1012CR-T1-GE3 is a MOSFET (N-Channel) component manufactured by Vishay. It comes in a SOT23 (3-Pin) package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

Need pricing on these alternatives?

Get one quote covering all 2 alternatives for SI1012CR-T1-GE3 — response within 24 hours.

Specification Comparison

ParameterSI1012CR-T1-GE3SourceSN74AUP1T97DSFRIS61WV102416BLL-10MLI
ManufacturerVishayTexas InstrumentsIntegrated Silicon Solution Inc.
Package TypeSOT23 (3-Pin)—BGA
Pin Count3—48
Temperature Range-55.0°C ~ 150.0°C—-40.0°C ~ 85.0°C
Price$0.0758$0.1161$14.2250
StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVE
Electrical Parameters
YTEOL7—5.15
ConfigurationSINGLE WITH BUILT-IN DIODE——
DS Breakdown Voltage-Min20 V——
Drain Current-Max (ID)0.63 A——
Drain-source On Resistance-Max0.396 Ω——
FET TechnologyMETAL-OXIDE SEMICONDUCTOR——
JESD-30 CodeR-PDSO-G3—R-PBGA-B48
JESD-609 Codee3——
Number of Elements1——
Operating ModeENHANCEMENT MODE—ASYNCHRONOUS
Package Body MaterialPLASTIC/EPOXY—PLASTIC/EPOXY
Package ShapeRECTANGULAR—RECTANGULAR
Package StyleSMALL OUTLINE—GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)260—260
Polarity/Channel TypeN-CHANNEL——
Power Dissipation-Max (Abs)0.24 W——
Surface MountYES—YES
Terminal FinishMATTE TIN——
Terminal FormGULL WING—BALL
Terminal PositionDUAL—BOTTOM
Time@Peak Reflow Temperature-Max (s)30——
Transistor ApplicationSWITCHING——
Transistor Element MaterialSILICON——
Pbfree Code——Yes
Factory Lead Time——10 Weeks
Access Time-Max——10 ns
I/O Type——COMMON
Memory Density——16777216 bit
Memory IC Type——STANDARD SRAM
Memory Width——16
Number of Functions——1
Number of Ports——1
Number of Words——1048576 words
Number of Words Code——1000000
Organization——1MX16
Output Characteristics——3-STATE
Output Enable——YES
Package Equivalence Code——BGA48,6X8,30
Parallel/Serial——PARALLEL
Qualification Status——Not Qualified
Standby Current-Max——0.02 A
Standby Voltage-Min——2 V
Supply Current-Max——0.095 mA
Supply Voltage-Max (Vsup)——3.6 V
Supply Voltage-Min (Vsup)——2.4 V
Supply Voltage-Nom (Vsup)——3 V
Technology——CMOS
Temperature Grade——INDUSTRIAL
Terminal Pitch——0.75 mm

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 2 alternatives for SI1012CR-T1-GE3 — response within 24 hours.

Quick Links

Why Look for Alternatives?

Finding alternatives for SI1012CR-T1-GE3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating SI1012CR-T1-GE3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

Can't Find What You Need?

Our sourcing team can help find compatible alternatives for SI1012CR-T1-GE3. Get expert recommendations within 24 hours.

FAQ

What is equivalent to SI1012CR-T1-GE3?

Known equivalents for SI1012CR-T1-GE3 include SN74AUP1T97DSFR, IS61WV102416BLL-10MLI. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of SI1012CR-T1-GE3?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify SI1012CR-T1-GE3 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.