SCTW100N120G2AG STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics SCTW100N120G2AG is an automotive-grade silicon carbide N-channel power MOSFET rated at 1200V and 75A with 39 mΩ maximum Rds(on), featuring a built-in diode, in a TO-247 HiP247 package.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- SCTW100N120G2AG Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- AEC-Q101 automotive-grade silicon carbide MOSFET rated 1200V and 75A for EV traction and onboard charger designs
- Ultra-low 30 mΩ typical Rds(on) at 25°C reducing conduction losses in high-frequency power converters
- Built-in body diode with low reverse recovery charge enabling hard-switching topologies without external anti-parallel diodes
- HiP247 package with improved thermal resistance enabling higher power density compared to standard TO-247 outlines
- Low feedback capacitance of 30 pF maximum supporting fast switching at high frequencies to minimize switching losses
Applications
The SCTW100N120G2AG is designed for automotive powertrain systems including electric vehicle traction inverters, onboard battery chargers, and DC-DC converters where 1200V blocking voltage and high-temperature operation are required. Its AEC-Q101 qualification and silicon carbide substrate enable switching frequencies above 20 kHz with reduced heat sink size compared to silicon IGBTs, lowering system weight in EV applications. Industrial uses include solar inverters, industrial motor drives, and uninterruptible power supplies benefiting from its low switching losses and 75A continuous drain current.
Specifications
| Date Of Intro | 2020-05-25 |
| YTEOL | 5 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200V |
| Drain Current-Max (ID) | 75A |
| Drain-source On Resistance-Max | 0.039Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 30pF |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 565W |
| Pulsed Drain Current-Max (IDM) | 228A |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What voltage and current ratings make SCTW100N120G2AG suitable for EV onboard charger designs?
The SCTW100N120G2AG is rated at 1200V breakdown voltage and 75A continuous drain current, with 39 mΩ maximum Rds(on), providing the headroom needed for 400V to 800V EV battery system charging circuits operating under AEC-Q101 automotive qualification.
How does silicon carbide technology in SCTW100N120G2AG improve efficiency over silicon IGBTs at 20 kHz?
Silicon carbide enables significantly lower switching losses and a feedback capacitance of only 30 pF maximum compared to silicon IGBTs, allowing the SCTW100N120G2AG to operate at switching frequencies of 20 kHz or higher with reduced thermal dissipation and smaller heatsinks.
Does SCTW100N120G2AG require an external anti-parallel diode in a bridge rectifier circuit?
No, it includes a built-in body diode with low reverse recovery charge, eliminating the need for a discrete external anti-parallel diode in half-bridge and full-bridge topologies, reducing component count and PCB area in high-power inverter stages.
What package does SCTW100N120G2AG use and how does it affect power density in a traction inverter module?
It uses the HiP247 package, which offers improved thermal resistance compared to a standard TO-247, allowing higher power dissipation per device and enabling a more compact traction inverter module when driving 75A loads at junction temperatures up to 175°C.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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