RZM002P02T2L ROHM Semiconductor MOSFET (P-Channel) (SO Transistor Flat Lead) In Stock
ROHM RZM002P02T2L is a P-channel MOSFET in a VMT3 3-pin SMD package with -20V breakdown voltage and 0.2A maximum drain current. It features a built-in diode and 1.2Ω max on-resistance for low-power load switching applications. Available from stock worldwide with fast shipping.
- Manufacturer
- ROHM Semiconductor
- Package
- SO Transistor Flat Lead
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- RZM002P02T2L Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $0.0530(MOQ 125)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- P-channel MOSFET with built-in diode in ultra-compact VMT3 3-pin package
- -20V DS breakdown voltage and 0.2A max drain current for small-signal load switching
- 1.2Ω max drain-source on-resistance for efficient low-power switching
- RoHS compliant with JEDEC e2 moisture sensitivity rating
Applications
The RZM002P02T2L is designed for low-power load switching and reverse-polarity protection circuits in portable consumer electronics and wearable devices. Its compact VMT3 footprint minimizes board area, making it ideal for battery-powered IoT sensors and small handheld equipment. The built-in diode simplifies circuit design by eliminating the need for an external freewheeling diode in inductive load applications.
Specifications
| Pbfree Code | Yes |
| Factory Lead Time | 21Weeks |
| YTEOL | 6.5 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20V |
| Drain Current-Max (ID) | 0.2A |
| Drain-source On Resistance-Max | 1.2Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-F3 |
| JESD-609 Code | e2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 0.15W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Tin/Copper (Sn/Cu) |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SO Transistor Flat Lead |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for RZM002P02T2L:
Frequently Asked Questions
What are the key voltage and current limits of the RZM002P02T2L for load-switching designs?
The RZM002P02T2L is rated for a -20V drain-source breakdown voltage and a maximum drain current of 0.2A. These limits make it suitable for switching small loads up to 200mA in 5V or 12V P-channel circuits where compact size is critical.
How does the built-in diode in the RZM002P02T2L simplify circuit design?
The integrated diode eliminates the need for an external Schottky or freewheeling diode across inductive loads, reducing component count by at least 1 part. This simplifies PCB layout in space-constrained designs such as wearable or IoT hardware running at voltages up to 20V.
Is the VMT3 package of the RZM002P02T2L appropriate for high-density SMD assembly?
Yes, the VMT3 package is one of the smallest 3-pin SOT-type footprints available, measuring approximately 1.6mm × 1.6mm. It supports automated pick-and-place assembly at standard reflow temperatures up to 260°C, making it ideal for compact multi-layer PCBs.
What on-resistance should designers budget for when using the RZM002P02T2L in a 3.3V switching circuit?
The maximum drain-source on-resistance is 1.2Ω. At 0.2A drain current, this produces a worst-case voltage drop of 240mV and a power dissipation of 48mW, which must be considered in efficiency budgets for battery-powered 3.3V applications.
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