RTQ020N05TR ROHM Semiconductor MOSFET (N-Channel) (SOT23 (6-Pin)) In Stock
ROHM RTQ020N05TR is a single N-channel MOSFET with built-in diode in a compact SOT-23 6-pin package, rated at 45V drain-source breakdown, 2A continuous drain current, and 0.28Ω on-resistance, ideal for low-side switching and load switch applications.
- Manufacturer
- ROHM Semiconductor
- Package
- SOT23 (6-Pin)
- Pin Count
- 6
- Lifecycle
- ACTIVE
- Datasheet
- RTQ020N05TR Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 45 V drain-source breakdown voltage for robust protection in 12V to 24V load switching circuits
- 2 A continuous drain current (ID) handles typical portable and consumer load currents with margin
- Low 0.28 Ω drain-source on-resistance minimizes conduction losses and heat dissipation at 2 A
- Built-in body diode in a single-element MOSFET configuration simplifies synchronous rectifier designs
- Compact SOT-23 6-pin (TSMT6) package enables dense PCB layouts in handheld and wearable products
- RoHS-compliant (JESD-609 e1) lead-free packaging for global regulatory compliance
Applications
RTQ020N05TR is well suited for load switching, battery protection circuits, and low-side switching in portable consumer electronics, IoT sensors, and small power management modules operating from 5V to 24V rails. Its low 0.28 Ω on-resistance and 2A current rating also make it a practical choice for motor drive enable/disable stages, LED dimming circuits, and smart home device power paths where compact footprint and low conduction loss are priorities.
Specifications
| Pbfree Code | Yes |
| YTEOL | 7 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 45V |
| Drain Current-Max (ID) | 2A |
| Drain-source On Resistance-Max | 0.28Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e1 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1.25W |
| Pulsed Drain Current-Max (IDM) | 8A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SOT23 (6-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
For a 12V load switch handling 1.5A, does the 0.28 Ω on-resistance of RTQ020N05TR cause significant power dissipation?
At 1.5 A through a 0.28 Ω on-resistance, RTQ020N05TR dissipates approximately 0.63 W (P = I² × Rds(on) = 1.5² × 0.28). The SOT-23 6-pin package has a moderate thermal resistance, so adequate copper area on the PCB pad is recommended to keep junction temperature within the rated range, typically up to 150°C for ROHM MOSFET devices.
How does the 45V breakdown rating of RTQ020N05TR compare to the requirements of a 24V industrial load switch with inductive transients?
A 24V rail with inductive switching transients can produce voltage spikes well above the nominal rail. The RTQ020N05TR offers a 45V minimum DS breakdown, providing approximately 21V of headroom above the 24V rail. Designers should add a TVS or snubber if transients may exceed 40V, as sustained voltages above 45V will exceed the absolute maximum rating and risk device damage.
What is the SOT-23 6-pin package footprint of RTQ020N05TR, and how does it fit in a space-constrained wearable device layout?
The SOT-23 6-pin (TSMT6, JESD-30 code R-PDSO-G6) package measures approximately 2.9 mm x 1.6 mm in body size with a typical height of 1.1 mm. This small footprint makes RTQ020N05TR suitable for wearable electronics and IoT sensor nodes where PCB area is limited and the 2A, 45V rating still satisfies most battery-powered load-switch requirements.
Does RTQ020N05TR include a built-in body diode, and how does that simplify a synchronous buck converter design?
Yes, RTQ020N05TR integrates a single built-in diode in the MOSFET package. In a synchronous buck converter, this body diode conducts during the dead time between high-side and low-side switching, eliminating the need for an external freewheeling diode. The built-in diode reduces component count and saves PCB area in battery charger and DC-DC converter designs operating at up to 2 A output.
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