RF5110GSR Qorvo Integrated Circuit (Quad Flat No-Lead) In Stock
Qorvo RF5110GSR is a high-gain power amplifier IC operating from 880 MHz to 960 MHz with 33 dB gain and 50 Ω characteristic impedance in a compact 16-pin QFN surface mount package. Handles input power up to 13 dBm CW for GSM/EDGE cellular and ISM-band applications. Available with worldwide shipping.
- Manufacturer
- Qorvo
- Package
- Quad Flat No-Lead
- Pin Count
- 17
- Lifecycle
- OBSOLETE
- Datasheet
- RF5110GSR Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 85.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of RF5110GSR?
- 33 dB gain over 880 MHz to 960 MHz frequency range covering GSM900 and ISM-band transmit chains
- 50 Ω characteristic impedance for direct integration into standard RF signal chains without external matching
- 13 dBm maximum CW input power handling enabling robust transmitter front-end designs
- Compact 16-pin QFN surface mount package minimizing PCB area in space-constrained RF modules
- Single-function power amplifier architecture simplifying RF system partitioning in cellular handset designs
What is RF5110GSR used for?
The RF5110GSR is designed for GSM900 and EDGE cellular handset transmit paths requiring 33 dB of gain in the 880 MHz to 960 MHz band. It is well-suited for RF power amplifier stages in M2M modules, smart meters with cellular connectivity, and LPWAN gateways operating in the 900 MHz ISM band. The compact QFN-16 footprint and 50 Ω interface enable drop-in integration into RF PCB layouts for base station accessory units and repeater designs.
What are the specifications of RF5110GSR?
| YTEOL | 0 |
| Characteristic Impedance | 50Ω |
| Construction | COMPONENT |
| Gain | 33dB |
| Input Power-Max (CW) | 13dBm |
| JESD-609 Code | e3 |
| Mounting Feature | SURFACE MOUNT |
| Number of Functions | 1 |
| Operating Frequency-Max | 960MHz |
| Operating Frequency-Min | 880MHz |
| Package Equivalence Code | LCC16,.12SQ,20 |
| Power Supplies | 2.7/4.8 V |
| RF/Microwave Device Type | POWER AMPLIFIER |
| Supply Current-Max | 2000mA |
| Surface Mount | YES |
| Technology | HYBRID |
| Terminal Finish | Matte Tin (Sn) |
| VSWR-Max | 10 |
| Package | Quad Flat No-Lead |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
What are equivalent replacements for RF5110GSR?
Compatible alternatives and drop-in replacements for RF5110GSR:
Frequently Asked Questions
What frequency range and gain does the RF5110GSR provide for cellular transmit applications?
The RF5110GSR operates from 880 MHz to 960 MHz, covering the GSM900 uplink band, and provides 33 dB of gain. This gain level amplifies a low-power baseband modulated signal of around -20 dBm to a useful RF output level, and the 50 Ω impedance throughout the chain ensures minimal insertion loss when cascaded with external SAW filters or antenna switches.
How does the 13 dBm maximum input power rating of RF5110GSR affect transmitter chain design?
With a maximum CW input power of 13 dBm, the RF5110GSR can tolerate moderate overdrive from the preceding driver stage without damage, providing a 3 dB to 6 dB safety margin over typical drive levels of 7 dBm to 10 dBm. This headroom simplifies APC (automatic power control) loop design in GSM/EDGE transmitters operating across the full 880 MHz to 960 MHz band.
For which 900 MHz IoT and M2M applications is the RF5110GSR a strong amplifier choice?
The RF5110GSR suits 900 MHz band IoT applications including smart utility meters with GSM/GPRS uplinks, agricultural telemetry nodes using EC-GSM-IoT, and industrial M2M gateways where a single-chip 33 dB amplifier in a 16-pin QFN reduces BOM cost compared to multi-stage discrete amplifier solutions. Its 880 MHz to 960 MHz coverage also matches the 915 MHz ISM band used in LoRa and SIGFOX LPWAN systems in the Americas.
How does the QFN-16 package of RF5110GSR simplify RF PCB layout compared to leaded IC alternatives?
The QFN-16 exposed-pad package of the RF5110GSR reduces lead inductance to under 0.5 nH per contact compared to 1.5 nH to 3 nH for leaded SOIC or TSSOP packages, significantly improving gain flatness and output match accuracy across the 880 MHz to 960 MHz band. The exposed thermal pad also conducts heat directly to the PCB ground plane, allowing the amplifier to operate continuously at output power levels without requiring external heat sinks in typical 5 V powered cellular module designs.
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