RB751V40T1GAlternatives & Equivalent Parts

About RB751V40T1G

RB751V40T1G is a Diode component manufactured by ON Semiconductor. It comes in a Small Outline Diode package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterRB751V40T1GSourceSMAJ36CA-13-FMMUN2214LT1GMBRA140T3G
ManufacturerON SemiconductorDiodes Inc.ON SemiconductorON Semiconductor
Package TypeSmall Outline DiodeDiodes MouldedSOT23 (3-Pin)Diodes Moulded
Pin Count2232
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C~ 150.0°C-55.0°C ~ 125.0°C
Price$0.0180$0.0882$0.0132$0.0784
StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVEACTIVE
Electrical Parameters
Pbfree CodeYesNoYesYes
Manufacturer Package Code477-02SMA318403D-02
YTEOL6676
ApplicationFAST RECOVERYPOWER
Breakdown Voltage-Min30 V40 V40 V
ConfigurationSINGLESINGLESINGLE WITH BUILT-IN RESISTORSINGLE
Diode Element MaterialSILICONSILICONSILICON
Diode TypeRECTIFIER DIODETRANS VOLTAGE SUPPRESSOR DIODERECTIFIER DIODE
Forward Voltage-Max (VF)0.37 V0.71 V
JESD-30 CodeR-PDSO-G2R-PDSO-C2R-PDSO-G3R-PDSO-C2
JESD-609 Codee3e3e3e3
Non-rep Pk Forward Current-Max0.5 A30 A
Number of Elements1111
Number of Phases11
Output Current-Max0.03 A1 A
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINESMALL OUTLINESMALL OUTLINE
Peak Reflow Temperature (Cel)260255260260
Power Dissipation-Max0.2 W1 W
Qualification StatusNot QualifiedNot QualifiedNot QualifiedNot Qualified
Rep Pk Reverse Voltage-Max40 V36 V40 V
Reverse Current-Max0.5 µA500 µA
Reverse Test Voltage30 V40 V
Surface MountYESYESYESYES
TechnologySCHOTTKYAVALANCHESCHOTTKY
Terminal FinishMatte Tin (Sn) - annealedMatte Tin (Sn)Matte Tin (Sn) - annealedMatte Tin (Sn) - annealed
Terminal FormGULL WINGC BENDGULL WINGC BEND
Terminal PositionDUALDUALDUALDUAL
Time@Peak Reflow Temperature-Max (s)30303030
Factory Lead Time12 Weeks
Additional FeatureEXCELLENT CLAMPING CAPABILITYBUILT-IN BIAS RESISTOR RATIO IS 4.7FREE WHEELING DIODE
Breakdown Voltage-Max44.2 V
Breakdown Voltage-Nom42.1 V
Clamping Voltage-Max58.1 V
Non-rep Peak Rev Power Dis-Max400 W
PolarityBIDIRECTIONAL
Collector Current-Max (IC)0.1 A
Collector-Emitter Voltage-Max50 V
DC Current Gain-Min (hFE)80
JEDEC-95 CodeTO-236
Polarity/Channel TypeNPN
Power Dissipation-Max (Abs)0.2 W
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 3 alternatives for RB751V40T1G — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for RB751V40T1G is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating RB751V40T1G replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to RB751V40T1G?

Known equivalents for RB751V40T1G include SMAJ36CA-13-F, MMUN2214LT1G, MBRA140T3G. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of RB751V40T1G?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify RB751V40T1G alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.