R6076KNZ4C13 ROHM Semiconductor MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
ROHM R6076KNZ4C13 is a 600 V, 76 A N-channel power MOSFET with 42 mΩ on-resistance in a TO-247 through-hole package. Designed for high-power switching in motor drives and PFC stages with a built-in anti-parallel diode. Available from stock worldwide with fast global shipping.
- Manufacturer
- ROHM Semiconductor
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- R6076KNZ4C13 Datasheet PDF
- Category
- MOSFET (N-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V drain-source breakdown voltage with 76 A continuous drain current for high-power switching applications
- Ultra-low 42 mΩ drain-source on-resistance (RDS(on)) reduces conduction losses in industrial converters
- Built-in anti-parallel diode eliminates external freewheeling diode in bridge and inverter topologies
Applications
The R6076KNZ4C13 is engineered for high-power industrial applications including three-phase motor drives, solar inverters, and power factor correction (PFC) converters operating on 400 V AC mains. Its 600 V blocking voltage and 76 A current rating allow direct use in half-bridge and full-bridge switching stages. The TO-247 package enables efficient thermal management with standard heatsinks in demanding power conversion systems.
Specifications
| Factory Lead Time | 18Weeks |
| Date Of Intro | 2018-10-10 |
| YTEOL | 7 |
| Avalanche Energy Rating (Eas) | 1954mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 76A |
| Drain-source On Resistance-Max | 0.042Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 228A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What switching topology is best suited for the R6076KNZ4C13 given its 600 V, 76 A ratings?
The R6076KNZ4C13 is optimally suited for half-bridge and full-bridge topologies in motor drives, UPS systems, and solar inverters operating from 400 V AC mains. Its 600 V blocking voltage provides sufficient margin over the 560 V DC bus peak, while its 76 A drain current and 42 mΩ on-resistance minimize conduction losses in continuous switching at tens of kilohertz.
How does the built-in anti-parallel diode in R6076KNZ4C13 simplify circuit design for bridge converters?
The R6076KNZ4C13 integrates an anti-parallel body diode rated for the full 76 A drain current, allowing it to conduct during freewheeling intervals without an external diode. This reduces the external component count by at least 1 diode per switch, simplifying PCB layout, reducing BOM cost, and lowering parasitic inductance in bridge converter designs.
How does the TO-247 package of R6076KNZ4C13 support thermal management in high-current applications?
The TO-247 package of the R6076KNZ4C13 provides a large exposed metal tab for direct mounting to heatsinks or cold plates, achieving junction-to-case thermal resistance well below 1 °C/W. At 76 A continuous drain current, effective heatsinking keeps the junction temperature within the rated limit, typically 150 °C, ensuring long-term reliability in high-power industrial drives.
When should an engineer consider R6076KNZ4C13 as an alternative to an IGBT in motor control designs?
Engineers should consider the R6076KNZ4C13 MOSFET over IGBTs when switching frequencies exceed 20 kHz, since MOSFETs have faster turn-off times with no tail current loss. At 600 V and 76 A with only 42 mΩ RDS(on), this part is competitive with IGBTs for motor drives in the 5 kW to 30 kW power range, especially in designs where switching losses dominate conduction losses.
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