PUCC21520AQDWQ1 Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
The PUCC21520AQDWQ1 is an AEC-Q100 automotive-grade isolated dual-channel gate driver with 4 A and 6 A output current capability and 5.7 kVrms isolation voltage, designed for IGBT and SiC MOSFET switching in automotive power converters. It provides reinforced isolation in a 16-pin wide SOIC package. Available from stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 16
- Lifecycle
- OBSOLETE
- Datasheet
- PUCC21520AQDWQ1 Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of PUCC21520AQDWQ1?
- AEC-Q100 automotive qualification ensures reliability for on-board chargers, traction inverters, and DC-DC converters in electric vehicles
- 5.7 kVrms reinforced isolation rating per channel meets the stringent isolation requirements of high-voltage automotive drive systems
- Asymmetric 4 A source / 6 A sink output current enables optimized IGBT and SiC MOSFET turn-on and turn-off control for reduced switching losses
- Dual independent isolated channels in one package simplify half-bridge gate drive design with fewer ICs and less PCB area
What is PUCC21520AQDWQ1 used for?
The PUCC21520AQDWQ1 is designed for high-voltage gate drive stages in automotive on-board chargers, DC-DC converters, and traction inverters where AEC-Q100 qualification and reinforced isolation up to 5.7 kVrms are required. Its asymmetric 4 A/6 A drive capability allows independent optimization of switching waveforms for SiC MOSFETs and IGBTs in half-bridge configurations. The dual-channel integration reduces the number of gate driver ICs per inverter phase leg, lowering system cost and simplifying PCB routing in compact EV power electronics modules.
What are the specifications of PUCC21520AQDWQ1?
| Date Of Intro | 2018-06-06 |
| YTEOL | 0 |
| Interface IC Type | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
| Screening Level | AEC-Q100 |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.60 |
Where can I find the PUCC21520AQDWQ1 datasheet?
PUCC21520AQDWQ1 Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for PUCC21520AQDWQ1?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the isolation voltage rating of the PUCC21520AQDWQ1?
The PUCC21520AQDWQ1 provides 5.7 kVrms reinforced galvanic isolation per channel, making it suitable for automotive traction inverter gate drives where the high-voltage bus can reach 800 V DC and isolation must meet IEC 60664 reinforced insulation requirements for protection of vehicle occupants.
Is the PUCC21520AQDWQ1 qualified for automotive use?
Yes, the PUCC21520AQDWQ1 carries the AEC-Q100 qualification (Q1 suffix) and is designed for automotive applications such as EV/HEV traction inverters, on-board chargers, and DC-DC converters operating over the full automotive temperature range. The PUCC21520AQDWQ1 meets the reliability standards required by automotive OEM supply chains.
What are the output current capabilities of the PUCC21520AQDWQ1?
The PUCC21520AQDWQ1 provides 4 A source (turn-on) and 6 A sink (turn-off) output peak current. The asymmetric drive allows designers to slow down the turn-on edge to limit dI/dt and EMI while keeping the turn-off fast to minimize tail current losses in IGBTs and reverse-recovery losses in SiC diodes.
How many isolated channels does the PUCC21520AQDWQ1 provide?
The PUCC21520AQDWQ1 integrates two independently isolated gate drive channels in a single 16-pin wide SOIC (DW) package. This dual-channel integration is ideal for half-bridge gate drive of one inverter phase leg, reducing component count compared to using two single-channel isolated drivers.
What power device types can the PUCC21520AQDWQ1 drive?
The PUCC21520AQDWQ1 is optimized to drive both SiC MOSFETs and IGBTs. For SiC MOSFETs it supports the negative gate bias voltage typically required during the off-state, and its high peak sink current enables the fast turn-off needed to exploit SiC's high switching-speed capability. For IGBTs the asymmetric drive and high current capability support efficient control of gate charge at frequencies up to tens of kilohertz.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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