PMEG1030EHAlternatives & Equivalent Parts

About PMEG1030EH

PMEG1030EH is a Diode component manufactured by Nexperia. It comes in a Small Outline Diode package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterPMEG1030EHSource2V7002WT1GPMEG2020EJESDA25P35-1U1M
ManufacturerNexperiaON SemiconductorNexperiaSTMicroelectronics
Package TypeSmall Outline DiodeSOT23 (3-Pin)Small Outline DiodeOther
Pin Count2322
Temperature Range-65.0°C ~ 150.0°C~ 150.0°C-65.0°C ~ 150.0°C-55.0°C ~ 150.0°C
Price$0.7762$0.0456$0.1750$0.0728
StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVEACTIVE
Electrical Parameters
Date Of Intro2017-02-012017-02-01
YTEOL6.12766.16
ApplicationEFFICIENCYEFFICIENCY
ConfigurationSINGLESINGLE WITH BUILT-IN DIODE AND RESISTORSINGLESINGLE
Diode Element MaterialSILICONSILICONSILICON
Diode TypeRECTIFIER DIODERECTIFIER DIODETRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)0.53 V0.525 V
JESD-30 CodeR-PDSO-F2R-PDSO-G3R-PDSO-F2R-PBCC-N2
JESD-609 Codee3e3e3e4
Non-rep Pk Forward Current-Max9 A9 A
Number of Elements1111
Number of Phases11
Output Current-Max3 A2 A
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINESMALL OUTLINECHIP CARRIER
Peak Reflow Temperature (Cel)260260260260
Power Dissipation-Max0.83 W0.36 W
Reference StandardIEC-60134AEC-Q101IEC-60134IEC-61000-4-2, 4-5
Rep Pk Reverse Voltage-Max10 V20 V22 V
Reverse Current-Max3000 µA200 µA0.2 µA
Reverse Test Voltage10 V20 V22 V
Surface MountYESYESYESYES
TechnologySCHOTTKYSCHOTTKYAVALANCHE
Terminal FinishTINMatte Tin (Sn) - annealedTINNickel/Palladium (Ni/Pd)
Terminal FormFLATGULL WINGFLATNO LEAD
Terminal PositionDUALDUALDUALBOTTOM
Time@Peak Reflow Temperature-Max (s)30303030
Pbfree CodeYes
Manufacturer Package Code419-04DFN.16.10.06-105-2L
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.31 A
Drain-source On Resistance-Max1.6 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Operating ModeENHANCEMENT MODE
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)0.33 W
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Breakdown Voltage-Max25.8 V
Breakdown Voltage-Min23.3 V
Breakdown Voltage-Nom24.6 V
Clamping Voltage-Max41 V
Non-rep Peak Rev Power Dis-Max1400 W
PolarityUNIDIRECTIONAL

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 3 alternatives for PMEG1030EH — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for PMEG1030EH is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating PMEG1030EH replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to PMEG1030EH?

Known equivalents for PMEG1030EH include 2V7002WT1G, PMEG2020EJ, ESDA25P35-1U1M. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of PMEG1030EH?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify PMEG1030EH alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.