NVHL040N65S3F onsemi MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
Lower RDS(on) / Same Packages; Best in Class body diode; Internal Rg; Lower FOM (RDS(ON) max X Qg typ & RDS (ON) max X EOSS; Internal Zener / 650V BVdss
- Manufacturer
- onsemi
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- NVHL040N65S3F Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $8.1000(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650V BVDSS N-Channel MOSFET with industry-leading RDS(on) of 40mΩ max, delivering best-in-class conduction efficiency
- Integrated internal gate resistor (Rg) and built-in Zener diode for enhanced ESD protection and gate drive stability
- Best-in-class body diode with optimized reverse recovery characteristics, minimizing switching losses in hard-switching topologies
- Superior Figure of Merit (FOM): RDS(ON)max × Qg typ and RDS(ON)max × EOSS, enabling high-frequency operation with reduced total losses
- High avalanche energy rating of 1009mJ (Eas) ensuring robust unclamped inductive switching (UIS) capability
Applications
The NVHL040N65S3F is designed for high-efficiency power conversion applications including PFC (Power Factor Correction) boost stages, LLC resonant converters, and bridgeless totem-pole PFC circuits. Its ultra-low 40mΩ RDS(on) and optimized body diode make it ideal for server power supplies, EV on-board chargers, solar inverters, and industrial motor drives operating at up to 650V. The internal Zener protection and high avalanche energy rating further suit it for demanding telecom rectifiers and UPS systems where robustness is critical.
Specifications
| Pbfree Code | Yes |
| Manufacturer Package Code | 340CX |
| Date Of Intro | 2019-01-14 |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 1009mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 65A |
| Drain-source On Resistance-Max | 0.04Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 446W |
| Pulsed Drain Current-Max (IDM) | 162.5A |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain-source on-resistance (RDS(on)) of the NVHL040N65S3F?
The NVHL040N65S3F features a maximum RDS(on) of 40mΩ (0.04Ω) at VGS = 10V, which is among the lowest in its class for 650V N-Channel MOSFETs. This low on-resistance directly reduces conduction losses, improving overall power conversion efficiency in demanding applications such as PFC stages and LLC resonant converters.
What are the key applications for the NVHL040N65S3F?
This 650V MOSFET is optimized for high-efficiency power conversion applications including bridgeless totem-pole PFC, LLC resonant half-bridge converters, server power supplies, EV on-board chargers (OBC), solar string inverters, industrial motor drives, telecom rectifiers, and UPS systems. Its low FOM and best-in-class body diode characteristics make it especially suitable for hard-switching and soft-switching topologies.
Does the NVHL040N65S3F have built-in protection features?
Yes, the NVHL040N65S3F integrates an internal gate resistor (Rg) for improved gate drive stability and EMI reduction, as well as a built-in Zener diode between gate and source for ESD and overvoltage protection. It also has a high avalanche energy rating of 1009mJ (Eas), providing robust protection against unclamped inductive switching (UIS) events.
What package does the NVHL040N65S3F use and what is the maximum drain current?
The NVHL040N65S3F is available in a TO-247 style Transistor Outline Vertical package (onsemi package code 340CX), which offers excellent thermal performance for high-power designs. The device supports a maximum continuous drain current (ID) of 65A, making it suitable for medium-to-high power density applications up to 650V.
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Why Buy from FindMyChip
About onsemi
onsemi is a leading electronic component manufacturer. FindMyChip sources onsemi ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $14.6900 | $14.69 |
| 5+ | $12.6200 | $63.10 |
| 10+ | $9.4700 | $94.70 |
| 120+ | $8.2300 | $987.60 |
| 450+ | $8.1000 | $3645.00 |
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