NVHL040N65S3F onsemi MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

Lower RDS(on) / Same Packages; Best in Class body diode; Internal Rg; Lower FOM (RDS(ON) max X Qg typ & RDS (ON) max X EOSS; Internal Zener / 650V BVdss

ACTIVEMOSFET (N-Channel)Verified Apr 2026
Package / Visual Reference
NVHL040N65S3FTransistor Outline, Vertical
Quick Facts
Manufacturer
onsemi
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $8.1000(MOQ 1)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 650V BVDSS N-Channel MOSFET with industry-leading RDS(on) of 40mΩ max, delivering best-in-class conduction efficiency
  • Integrated internal gate resistor (Rg) and built-in Zener diode for enhanced ESD protection and gate drive stability
  • Best-in-class body diode with optimized reverse recovery characteristics, minimizing switching losses in hard-switching topologies
  • Superior Figure of Merit (FOM): RDS(ON)max × Qg typ and RDS(ON)max × EOSS, enabling high-frequency operation with reduced total losses
  • High avalanche energy rating of 1009mJ (Eas) ensuring robust unclamped inductive switching (UIS) capability

Applications

The NVHL040N65S3F is designed for high-efficiency power conversion applications including PFC (Power Factor Correction) boost stages, LLC resonant converters, and bridgeless totem-pole PFC circuits. Its ultra-low 40mΩ RDS(on) and optimized body diode make it ideal for server power supplies, EV on-board chargers, solar inverters, and industrial motor drives operating at up to 650V. The internal Zener protection and high avalanche energy rating further suit it for demanding telecom rectifiers and UPS systems where robustness is critical.

Specifications

Pbfree CodeYes
Manufacturer Package Code340CX
Date Of Intro2019-01-14
YTEOL5
Avalanche Energy Rating (Eas)1009mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min650V
Drain Current-Max (ID)65A
Drain-source On Resistance-Max0.04Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-247
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)446W
Pulsed Drain Current-Max (IDM)162.5A
Reference StandardAEC-Q101
Surface MountNO
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

NVHL040N65S3F Datasheet Download

Official datasheet from onsemi

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the maximum drain-source on-resistance (RDS(on)) of the NVHL040N65S3F?

The NVHL040N65S3F features a maximum RDS(on) of 40mΩ (0.04Ω) at VGS = 10V, which is among the lowest in its class for 650V N-Channel MOSFETs. This low on-resistance directly reduces conduction losses, improving overall power conversion efficiency in demanding applications such as PFC stages and LLC resonant converters.

What are the key applications for the NVHL040N65S3F?

This 650V MOSFET is optimized for high-efficiency power conversion applications including bridgeless totem-pole PFC, LLC resonant half-bridge converters, server power supplies, EV on-board chargers (OBC), solar string inverters, industrial motor drives, telecom rectifiers, and UPS systems. Its low FOM and best-in-class body diode characteristics make it especially suitable for hard-switching and soft-switching topologies.

Does the NVHL040N65S3F have built-in protection features?

Yes, the NVHL040N65S3F integrates an internal gate resistor (Rg) for improved gate drive stability and EMI reduction, as well as a built-in Zener diode between gate and source for ESD and overvoltage protection. It also has a high avalanche energy rating of 1009mJ (Eas), providing robust protection against unclamped inductive switching (UIS) events.

What package does the NVHL040N65S3F use and what is the maximum drain current?

The NVHL040N65S3F is available in a TO-247 style Transistor Outline Vertical package (onsemi package code 340CX), which offers excellent thermal performance for high-power designs. The device supports a maximum continuous drain current (ID) of 65A, making it suitable for medium-to-high power density applications up to 650V.

Related Guides

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About onsemi

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AvailabilityIn Stock
Reference Price (USD)
From $8.1000
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$14.6900$14.69
5+$12.6200$63.10
10+$9.4700$94.70
120+$8.2300$987.60
450+$8.1000$3645.00
pcs
Unit price: $14.6900 · Total: $14.69

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy