MT40A256M16GE-075E:B Micron Integrated Circuit (BGA) In Stock
Micron MT40A256M16GE-075E:B is a 4 Gb DDR4 SDRAM in a 96-ball FBGA package with a 16-bit wide data bus and 1333 MHz (2666 MT/s) data rate. Features auto-refresh, multi-bank page burst access, and operates at 1.2V. Available from stock worldwide with fast shipping.
- Manufacturer
- Micron
- Package
- BGA
- Pin Count
- 96
- Lifecycle
- OBSOLETE
- Datasheet
- MT40A256M16GE-075E:B Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $76.4706(MOQ 2)
- Temp Range
- ?°C to 70.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 4 Gb DDR4 SDRAM with 16-bit bus width delivering 2666 MT/s data transfer rate for high-bandwidth memory applications
- 1.2V operating voltage reducing power consumption versus DDR3 while maintaining compatibility with industry-standard DDR4 controllers
- 96-ball FBGA package with auto-refresh and multi-bank burst access for efficient memory subsystem design
Applications
The MT40A256M16GE-075E:B is used in networking equipment, embedded computing modules, and industrial SoC platforms requiring DDR4 memory with a 4 Gb density per device. Its 16-bit bus width and 2666 MT/s data rate make it well suited for applications such as network switches, smart NICs, and edge AI inference engines where memory bandwidth directly impacts throughput.
Specifications
| YTEOL | 0 |
| Access Mode | MULTI BANK PAGE BURST |
| Additional Feature | AUTO/SELF REFRESH |
| JESD-30 Code | R-PBGA-B96 |
| Memory Density | 4294967296bit |
| Memory IC Type | DDR4 DRAM |
| Memory Width | 16 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Words | 268435456words |
| Number of Words Code | 256000000 |
| Operating Mode | SYNCHRONOUS |
| Organization | 256MX16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Refresh Cycles | 8192 |
| Self Refresh | YES |
| Supply Voltage-Max (Vsup) | 1.26V |
| Supply Voltage-Min (Vsup) | 1.14V |
| Supply Voltage-Nom (Vsup) | 1.2V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Form | BALL |
| Terminal Pitch | 0.8mm |
| Terminal Position | BOTTOM |
| Package | BGA |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8542.32.00.36 |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for MT40A256M16GE-075E:B:
suggested
suggested
Frequently Asked Questions
What is the data rate and bus width of the Micron MT40A256M16GE-075E:B DDR4 SDRAM?
The MT40A256M16GE-075E:B operates at 2666 MT/s (DDR4-2666) with a 16-bit wide data bus, delivering a peak theoretical bandwidth of approximately 42.7 GB/s per device when used in a dual-channel 32-bit system configuration.
How does the 1.2V supply voltage of MT40A256M16GE-075E:B benefit battery-powered or thermally constrained embedded designs?
DDR4 operates at 1.2V versus DDR3's 1.5V, reducing power dissipation by roughly 20% at similar frequencies. For embedded platforms in fanless or sealed enclosures, this lower voltage translates to reduced thermal load and longer battery life in portable industrial devices.
What total memory capacity can a design achieve using multiple MT40A256M16GE-075E:B devices on a single PCB?
Each MT40A256M16GE-075E:B provides 4 Gb (512 MB) of DDR4 SDRAM. A typical 32-bit wide DDR4 channel using 2 of these 16-bit devices yields 8 Gb (1 GB) total; a 64-bit channel using 4 devices achieves 16 Gb (2 GB) per rank, sufficient for most embedded networking and edge compute platforms.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 2+ | $88.2353 | $176.47 |
| 3+ | $85.2941 | $255.88 |
| 4+ | $76.4706 | $305.88 |
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