MT40A1G8SA-075:E Micron Integrated Circuit (BGA) In Stock
MT40A1G8SA-075:E is a Micron 8Gb DDR4 DRAM in BGA-78 package, featuring 1.2V operation, 1333MHz data rate, and multi-bank burst access. From $66.91, in stock with worldwide shipping.
- Manufacturer
- Micron
- Package
- BGA
- Pin Count
- 78
- Lifecycle
- OBSOLETE
- Datasheet
- MT40A1G8SA-075:E Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $66.9118(MOQ 3)
- Temp Range
- ?°C to 85.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 8Gb DDR4 DRAM with 1333MHz (DDR4-2666) data rate for high-bandwidth memory applications
- 1.2V VDD operation for low power consumption in server and embedded designs
- 78-ball BGA package with multi-bank page burst and auto/self-refresh support
- x8 data bus width with common I/O, enabling flexible system memory configurations
- JEDEC-compliant DDR4 interface with interleaved burst length of 8 for optimized throughput
Applications
The MT40A1G8SA-075:E is widely used in server and data center memory modules requiring high-density DDR4 DRAM. It is also deployed in high-performance embedded computing platforms, network equipment, and storage controllers where reliable 8Gb DDR4 memory with low power operation is essential. The compact BGA-78 form factor makes it suitable for space-constrained designs in industrial and communications applications.
Specifications
| Date Of Intro | 2017-07-13 |
| YTEOL | 0 |
| Access Mode | MULTI BANK PAGE BURST |
| Additional Feature | AUTO/SELF REFRESH |
| I/O Type | COMMON |
| Interleaved Burst Length | 8 |
| JESD-30 Code | R-PBGA-B78 |
| JESD-609 Code | e1 |
| Memory Density | 8589934592bit |
| Memory IC Type | DDR4 DRAM |
| Memory Width | 8 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Words | 1073741824words |
| Number of Words Code | 1000000000 |
| Operating Mode | SYNCHRONOUS |
| Organization | 1GX8 |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | BGA78,6X13,32 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Refresh Cycles | 8192 |
| Reverse Pinout | NO |
| Self Refresh | YES |
| Supply Voltage-Max (Vsup) | 1.26V |
| Supply Voltage-Min (Vsup) | 1.14V |
| Supply Voltage-Nom (Vsup) | 1.2V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | OTHER |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Form | BALL |
| Terminal Pitch | 0.8mm |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | BGA |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8542.32.00.36 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key specifications of the MT40A1G8SA-075:E?
The MT40A1G8SA-075:E is an 8Gb DDR4 DRAM from Micron with a 1333MHz data rate (DDR4-2666), 1.2V VDD supply, x8 data bus width, and burst length of 8. It is packaged in a 78-ball BGA (JESD-30 code R-PBGA-B78) and supports multi-bank page burst access with auto and self-refresh modes.
What applications is the MT40A1G8SA-075:E suitable for?
This Micron DDR4 DRAM is well-suited for server memory modules, high-performance computing, network infrastructure, storage controllers, and industrial embedded systems. Its 8Gb density and low 1.2V operation make it a strong choice for designs requiring high bandwidth and energy efficiency in a compact BGA footprint.
Is the MT40A1G8SA-075:E RoHS compliant, and what does the ':E' suffix mean?
Yes, the ':E' suffix in the MT40A1G8SA-075:E part number indicates RoHS compliance (lead-free, JESD-609 code e1), meaning the component meets environmental regulations for restricted hazardous substances. This makes it suitable for designs requiring compliance with EU RoHS directives.
What is a compatible replacement or alternative for the MT40A1G8SA-075:E?
Compatible alternatives for the MT40A1G8SA-075:E include other Micron 8Gb DDR4 DRAM parts such as MT40A1G8WE-075:E and MT40A1G8PM-075:E, which share the same density and speed grade but may differ in package or configuration. Samsung and SK Hynix also offer equivalent 8Gb DDR4 x8 DRAM components with similar specifications.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3+ | $77.2059 | $231.62 |
| 4+ | $74.6324 | $298.53 |
| 5+ | $66.9118 | $334.56 |
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