MSC400SMA330B4 Microchip MOSFET (N-Channel) (Other) In Stock
Microchip MSC400SMA330B4 is a 3300 V SiC N-Channel Power MOSFET in a TO-247-4 package with 400 mΩ on-resistance and 11 A drain current. It integrates a built-in anti-parallel diode for high-voltage power conversion applications.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 4
- Lifecycle
- OBSOLETE
- Datasheet
- MSC400SMA330B4 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 3300 V breakdown voltage with SiC technology enabling ultra-high-voltage power conversion with minimal switching losses
- Single N-Channel configuration with built-in anti-parallel diode eliminating external freewheeling diode requirements
- TO-247-4 package with isolated drain tab supporting high-power designs up to 11 A drain current and 0.52 Ω Rds(on)
Applications
The MSC400SMA330B4 targets medium-voltage industrial drives, traction inverters, and solid-state transformer stages where 3300 V blocking capability and SiC switching speed reduce converter size and heat generation. Its built-in diode simplifies half-bridge topologies in energy storage and grid-tied inverter systems operating at switching frequencies above 10 kHz.
Specifications
| Manufacturer Package Code | TO-247-4 |
| Factory Lead Time | 35Weeks |
| YTEOL | 0 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 3300V |
| Drain Current-Max (ID) | 11A |
| Drain-source On Resistance-Max | 0.52Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 2pF |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T4 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 131W |
| Pulsed Drain Current-Max (IDM) | 27A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Philippines |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical limits of the MSC400SMA330B4 for high-voltage converter designs?
The MSC400SMA330B4 offers a 3300 V drain-source breakdown voltage, 11 A maximum drain current, and 0.52 Ω on-resistance (Rds(on)), with a feedback capacitance (Crss) of just 2 pF, making it suitable for high-frequency switching in medium-voltage inverters.
Which traction or industrial drive applications benefit from the MSC400SMA330B4's SiC technology?
Medium-voltage traction inverters, industrial motor drives, and grid-connected converters operating at 3300 V bus voltages benefit from this SiC MOSFET. Its low switching losses at frequencies above 10 kHz allow system designers to reduce filter inductors and capacitors by at least 30% compared to equivalent silicon IGBTs.
Does the MSC400SMA330B4 include an internal freewheeling diode, and how does this affect circuit design?
Yes, the MSC400SMA330B4 integrates a built-in anti-parallel diode in the TO-247-4 package, eliminating the need for an external freewheeling diode in half-bridge or full-bridge topologies. This reduces component count by at least 1 diode per switch position and lowers PCB complexity in 3300 V converter stages.
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