MSC400SMA330B4 Microchip MOSFET (N-Channel) (Other) In Stock

Microchip MSC400SMA330B4 is a 3300 V SiC N-Channel Power MOSFET in a TO-247-4 package with 400 mΩ on-resistance and 11 A drain current. It integrates a built-in anti-parallel diode for high-voltage power conversion applications.

OBSOLETEMOSFET (N-Channel)Verified Jun 2026
Package / Visual Reference
MSC400SMA330B4Other
Quick Facts
Manufacturer
Microchip
Package
Other
Pin Count
4
Lifecycle
OBSOLETE
Category
MOSFET (N-Channel)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

What are the key features of MSC400SMA330B4?

  • 3300 V breakdown voltage with SiC technology enabling ultra-high-voltage power conversion with minimal switching losses
  • Single N-Channel configuration with built-in anti-parallel diode eliminating external freewheeling diode requirements
  • TO-247-4 package with isolated drain tab supporting high-power designs up to 11 A drain current and 0.52 Ω Rds(on)

What is MSC400SMA330B4 used for?

The MSC400SMA330B4 targets medium-voltage industrial drives, traction inverters, and solid-state transformer stages where 3300 V blocking capability and SiC switching speed reduce converter size and heat generation. Its built-in diode simplifies half-bridge topologies in energy storage and grid-tied inverter systems operating at switching frequencies above 10 kHz.

What are the specifications of MSC400SMA330B4?

Manufacturer Package CodeTO-247-4
Factory Lead Time35Weeks
YTEOL0
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min3300V
Drain Current-Max (ID)11A
Drain-source On Resistance-Max0.52Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)2pF
JEDEC-95 CodeTO-247
JESD-30 CodeR-PSFM-T4
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)131W
Pulsed Drain Current-Max (IDM)27A
Surface MountNO
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON CARBIDE
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginPhilippines

Where can I find the MSC400SMA330B4 datasheet?

MSC400SMA330B4 Datasheet Download

Official datasheet from Microchip

What are equivalent replacements for MSC400SMA330B4?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key electrical limits of the MSC400SMA330B4 for high-voltage converter designs?

The MSC400SMA330B4 offers a 3300 V drain-source breakdown voltage, 11 A maximum drain current, and 0.52 Ω on-resistance (Rds(on)), with a feedback capacitance (Crss) of just 2 pF, making it suitable for high-frequency switching in medium-voltage inverters.

Which traction or industrial drive applications benefit from the MSC400SMA330B4's SiC technology?

Medium-voltage traction inverters, industrial motor drives, and grid-connected converters operating at 3300 V bus voltages benefit from this SiC MOSFET. Its low switching losses at frequencies above 10 kHz allow system designers to reduce filter inductors and capacitors by at least 30% compared to equivalent silicon IGBTs.

Does the MSC400SMA330B4 include an internal freewheeling diode, and how does this affect circuit design?

Yes, the MSC400SMA330B4 integrates a built-in anti-parallel diode in the TO-247-4 package, eliminating the need for an external freewheeling diode in half-bridge or full-bridge topologies. This reduces component count by at least 1 diode per switch position and lowers PCB complexity in 3300 V converter stages.

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AvailabilityIn Stock
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Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

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