MMSD4148T1GAlternatives & Equivalent Parts

About MMSD4148T1G

MMSD4148T1G is a Diode component manufactured by ON Semiconductor. It comes in a Small Outline Diode package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterMMSD4148T1GSource2N6388G1.5KE36CA
ManufacturerON SemiconductorON SemiconductorSTMicroelectronics
Package TypeSmall Outline DiodeTransistor Outline, VerticalDiodes, Axial Diameter Horizontal Mounting
Pin Count232
Temperature Range-55.0°C ~ 150.0°C~ 150.0°C-55.0°C ~ 175.0°C
Price$0.0082$0.3524$0.1092
StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEEND OF LIFE
Electrical Parameters
Pbfree CodeYesYes
Manufacturer Package Code425-04221A
YTEOL6.141
Additional FeatureFAST SWITCHINGLEADFORM OPTIONS ARE AVAILABLEUL RECOGNIZED
ApplicationFAST RECOVERY
Breakdown Voltage-Min100 V34.2 V
ConfigurationSINGLEDARLINGTON WITH BUILT-IN DIODE AND RESISTORSINGLE, 1 CHANNEL
Diode Element MaterialSILICONSILICON
Diode TypeRECTIFIER DIODETRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)1 V
JESD-30 CodeR-PDSO-G2R-PSFM-T3O-PALF-W2
JESD-609 Codee3e3e3
Non-rep Pk Forward Current-Max2 A
Number of Elements111
Number of Phases1
Output Current-Max0.2 A
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARROUND
Package StyleSMALL OUTLINEFLANGE MOUNTLONG FORM
Peak Reflow Temperature (Cel)260
Power Dissipation-Max0.425 W5 W
Qualification StatusNot QualifiedNot QualifiedNot Qualified
Rep Pk Reverse Voltage-Max100 V30.8 V
Reverse Current-Max5 µA5 µA
Reverse Recovery Time-Max0.004 µs
Reverse Test Voltage75 V30.8 V
Surface MountYESNONO
Terminal FinishMatte Tin (Sn) - annealedMatte Tin (Sn) - annealedMatte Tin (Sn)
Terminal FormGULL WINGTHROUGH-HOLEWIRE
Terminal PositionDUALSINGLEAXIAL
Time@Peak Reflow Temperature-Max (s)30
Case ConnectionCOLLECTORISOLATED
Collector Current-Max (IC)10 A
Collector-Emitter Voltage-Max80 V
DC Current Gain-Min (hFE)1000
JEDEC-95 CodeTO-220ABDO-201
Polarity/Channel TypeNPN
Power Dissipation Ambient-Max2 W
Power Dissipation-Max (Abs)45 W
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transition Frequency-Nom (fT)20 MHz
Factory Lead Time25 Weeks
Breakdown Voltage-Max37.8 V
Breakdown Voltage-Nom36 V
Clamping Voltage-Max64.3 V
Diode Capacitance-Min1250 pF
Non-rep Peak Rev Power Dis-Max1500 W
PolarityBIDIRECTIONAL
Reference StandardIEC-61000-4-2, 4-4, 4-5; MIL-STD-750
TechnologyAVALANCHE

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 2 alternatives for MMSD4148T1G — response within 24 hours.

Quick Links

2N6388G

suggested

1.5KE36CA

suggested

Why Look for Alternatives?

Finding alternatives for MMSD4148T1G is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating MMSD4148T1G replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to MMSD4148T1G?

Known equivalents for MMSD4148T1G include 2N6388G, 1.5KE36CA. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of MMSD4148T1G?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify MMSD4148T1G alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.