MMBTA28-7-F Diodes Inc. Transistor BJT NPN (SOT23 (3-Pin)) In Stock
Diodes Inc. MMBTA28-7-F is an NPN Darlington transistor in a SOT-23 3-pin package with 80 V collector-emitter voltage, 0.5 A maximum collector current, and minimum DC current gain (hFE) of 10000. Designed for high-gain switching and amplification in compact SMT circuits. RoHS compliant with worldwide shipping available.
- Manufacturer
- Diodes Inc.
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- MMBTA28-7-F Datasheet PDF
- Category
- Transistor BJT NPN
- Price
- From $0.0323(MOQ 50)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of MMBTA28-7-F?
- Darlington NPN configuration with minimum hFE of 10000 enables microcontroller logic signals to drive loads up to 0.5 A without additional amplification stages
- 80 V collector-emitter breakdown voltage supports switching applications in industrial and automotive-adjacent circuits above standard 5 V logic rails
- Compact SOT-23 (3-pin) SMD package occupies minimal PCB area for portable and space-constrained switching circuit designs
What is MMBTA28-7-F used for?
The MMBTA28-7-F is ideal for high-gain switch applications where a single transistor must drive relay coils, solenoids, or LED arrays directly from a low-current microcontroller GPIO pin. Its Darlington configuration with hFE ≥ 10000 means that even a 5 µA base current can switch up to 50 mA collector loads, making it suitable for optocoupler output stages, motor control pre-drivers, and sensor interface amplifiers. The SOT-23 package enables high-density placement in portable instrumentation, consumer electronics, and IoT gateway boards.
What are the specifications of MMBTA28-7-F?
| Pbfree Code | Yes |
| Factory Lead Time | 12Weeks |
| YTEOL | 7 |
| Collector Current-Max (IC) | 0.5A |
| Collector-Emitter Voltage-Max | 80V |
| Configuration | DARLINGTON |
| DC Current Gain-Min (hFE) | 10000 |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 255 |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 0.3W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 125MHz |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the MMBTA28-7-F datasheet?
MMBTA28-7-F Datasheet DownloadOfficial datasheet from Diodes Inc.
What are equivalent replacements for MMBTA28-7-F?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What base current is needed to saturate the MMBTA28-7-F when driving a 100 mA relay coil?
With a minimum hFE of 10000 in Darlington configuration, the MMBTA28-7-F requires only 10 µA of base current to switch 100 mA at the collector. A typical 3.3 V GPIO output through a 100 kΩ series resistor will provide approximately 33 µA base drive — more than enough to fully saturate the transistor and drive the relay coil with ample margin.
What is the maximum collector-emitter voltage for the MMBTA28-7-F, and does it support 48 V industrial loads?
The MMBTA28-7-F has an 80 V maximum collector-emitter voltage (VCEO), providing substantial margin above 48 V industrial power rails. This headroom accounts for inductive kickback spikes from relay coils or solenoids, which can transiently exceed the supply voltage. A flyback diode across the load is still recommended, but the 80 V rating ensures the transistor survives typical 48 V switching transients without breakdown.
How does the MMBTA28-7-F Darlington transistor compare to a single-stage NPN for microcontroller-driven switching?
A single-stage NPN transistor typically has hFE between 100 and 300, requiring 0.3 to 1 mA base drive for a 100 mA load. The MMBTA28-7-F Darlington's hFE ≥ 10000 reduces base current requirements to under 10 µA for the same 100 mA load, allowing direct GPIO drive without current buffers. The trade-off is a higher saturation voltage of approximately 1.0 V to 1.2 V (versus 0.2 V for a single-stage NPN), which increases power dissipation slightly at maximum collector current of 0.5 A.
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Why Buy from FindMyChip
About Diodes Inc.
Diodes Inc. is a leading electronic component manufacturer. FindMyChip sources Diodes Inc. ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 50+ | $0.1700 | $8.50 |
| 100+ | $0.1012 | $10.12 |
| 500+ | $0.0743 | $37.14 |
| 1000+ | $0.0655 | $65.54 |
| 3000+ | $0.0560 | $168.00 |
| 6000+ | $0.0323 | $193.80 |
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