MMBT5551LT1GAlternatives & Equivalent Parts

About MMBT5551LT1G

MMBT5551LT1G is a Transistor component manufactured by ON Semiconductor. It comes in a SOT23 (3-Pin) package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterMMBT5551LT1GSourceESD5B5.0ST1GMM3Z18VT1G
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Package TypeSOT23 (3-Pin)Small Outline Diode Flat LeadOther
Pin Count322
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-65.0°C ~ 150.0°C
Price$0.0077$0.0340$0.0135
StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVE
Electrical Parameters
Pbfree CodeYesYesYes
Manufacturer Package Code318502477-02
Date Of Intro1999-01-01
YTEOL75.986.95
Collector Current-Max (IC)0.06 A
Collector-Emitter Voltage-Max160 V
ConfigurationSINGLESINGLE, 1 CHANNELSINGLE
DC Current Gain-Min (hFE)30
JEDEC-95 CodeTO-236AB
JESD-30 CodeR-PDSO-G3R-PDSO-F2R-PDSO-G2
JESD-609 Codee3e3e3
Number of Elements111
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINESMALL OUTLINE
Peak Reflow Temperature (Cel)260260260
Polarity/Channel TypeNPN
Power Dissipation-Max (Abs)0.3 W
Qualification StatusNot QualifiedNot QualifiedNot Qualified
Surface MountYESYESYES
Terminal FinishMatte Tin (Sn) - annealedMatte Tin (Sn) - annealedMatte Tin (Sn) - annealed
Terminal FormGULL WINGFLATGULL WING
Terminal PositionDUALDUALDUAL
Time@Peak Reflow Temperature-Max (s)303030
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
VCEsat-Max0.2 V
Additional FeatureEXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE
Breakdown Voltage-Max7.8 V
Breakdown Voltage-Min5.8 V
Breakdown Voltage-Nom6.8 V
Diode Element MaterialSILICONSILICON
Diode TypeTRANS VOLTAGE SUPPRESSOR DIODEZENER DIODE
Forward Voltage-Max (VF)0.9 V0.9 V
Non-rep Peak Rev Power Dis-Max50 W
PolarityBIDIRECTIONALUNIDIRECTIONAL
Power Dissipation-Max0.2 W0.3 W
Reference StandardIEC-61000-4-2
Rep Pk Reverse Voltage-Max5 V
Reverse Current-Max1 µA0.05 µA
Reverse Test Voltage5 V12.6 V
TechnologyAVALANCHEZENER
Factory Lead Time8 Weeks
Dynamic Impedance-Max45 Ω
Knee Impedance-Max80 Ω
Reference Voltage-Nom18 V
Voltage Tol-Max6.41%
Working Test Current5 mA

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 2 alternatives for MMBT5551LT1G — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for MMBT5551LT1G is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating MMBT5551LT1G replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to MMBT5551LT1G?

Known equivalents for MMBT5551LT1G include ESD5B5.0ST1G, MM3Z18VT1G. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of MMBT5551LT1G?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify MMBT5551LT1G alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.