MJD45H11T4Alternatives & Equivalent Parts
About MJD45H11T4
MJD45H11T4 is a Transistor BJT PNP component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | MJD45H11T4Source | MJD45H11T4G | MJD45H11-1G |
|---|---|---|---|
| Manufacturer | STMicroelectronics | ON Semiconductor | ON Semiconductor |
| Package Type | Other | Other | Transistor Outline, Vertical |
| Pin Count | 3 | 3 | 4 |
| Temperature Range | ~ 150.0°C | ~ 150.0°C | ~ 150.0°C |
| Price | $0.2574 | $0.2520 | $0.3993 |
| Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | |||
| Factory Lead Time | 14 Weeks | — | 12 Weeks |
| YTEOL | 9 | 6 | 6 |
| Case Connection | COLLECTOR | COLLECTOR | COLLECTOR |
| Collector Current-Max (IC) | 8 A | 8 A | 8 A |
| Collector-Emitter Voltage-Max | 80 V | 80 V | 80 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| DC Current Gain-Min (hFE) | 40 | 40 | 40 |
| JEDEC-95 Code | TO-252 | — | — |
| JESD-30 Code | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 |
| JESD-609 Code | e3 | e3 | e3 |
| Number of Elements | 1 | 1 | 1 |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | IN-LINE |
| Peak Reflow Temperature (Cel) | 260 | 260 | 260 |
| Polarity/Channel Type | PNP | PNP | PNP |
| Power Dissipation Ambient-Max | 20 W | — | — |
| Power Dissipation-Max (Abs) | 20 W | 20 W | 20 W |
| Qualification Status | Not Qualified | Not Qualified | Not Qualified |
| Surface Mount | YES | YES | NO |
| Terminal Finish | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING | GULL WING | THROUGH-HOLE |
| Terminal Position | SINGLE | SINGLE | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 30 | 30 |
| Transistor Application | SWITCHING | SWITCHING | SWITCHING |
| Transistor Element Material | SILICON | SILICON | SILICON |
| Transition Frequency-Nom (fT) | 40 MHz | 90 MHz | 40 MHz |
| VCEsat-Max | 1 V | — | — |
| Pbfree Code | — | Yes | Yes |
| Manufacturer Package Code | — | 369C | 369 |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 2 alternatives for MJD45H11T4 — response within 24 hours.
Quick Links
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Why Look for Alternatives?
Finding alternatives for MJD45H11T4 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating MJD45H11T4 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to MJD45H11T4?
Known equivalents for MJD45H11T4 include MJD45H11T4G, MJD45H11-1G. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of MJD45H11T4?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify MJD45H11T4 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.