MJD122T4Alternatives & Equivalent Parts

About MJD122T4

MJD122T4 is a Transistor Darlington Pair component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterMJD122T4SourcePT651032312-H-RCL-154A4SUREQBFZGEWMJD122T4GNJVMJD122T4G
ManufacturerSTMicroelectronicsApemBournsKingbrightON SemiconductorON Semiconductor
Package TypeOtherOtherOtherOtherOtherOther
Pin Count362433
Temperature Range~ 150.0°C-20.0°C ~ 70.0°C-55.0°C ~ 105.0°C-40.0°C ~ 85.0°C~ 150.0°C-65.0°C ~ 150.0°C
Price$0.2067$2.3800$1.9711$0.8530$0.3072$0.4070
StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVEACTIVEACTIVEACTIVE
Electrical Parameters
Factory Lead Time14 Weeks25 Weeks10 Weeks
YTEOL977644
Case ConnectionCOLLECTORCOLLECTORCOLLECTOR
Collector Current-Max (IC)8 A8 A8 A
Collector-Emitter Voltage-Max100 V100 V100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTORCOMMON CATHODE, 3 ELEMENTSDARLINGTON WITH BUILT-IN DIODE AND RESISTORDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE)100100100
JEDEC-95 CodeTO-252
JESD-30 CodeR-PSSO-G2R-PSSO-G2R-PSSO-G2
JESD-609 Codee3e3e3e3
Number of Elements111
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINEToroidalSMALL OUTLINESMALL OUTLINE
Peak Reflow Temperature (Cel)260260260
Polarity/Channel TypeNPNNPNNPN
Power Dissipation Ambient-Max20 W
Power Dissipation-Max (Abs)20 W20 W20 W
Qualification StatusNot QualifiedNot Qualified
Surface MountYESNONONOYESYES
Terminal FinishMatte Tin (Sn) - annealedTin (Sn)Matte Tin (Sn) - annealedMatte Tin (Sn) - annealed
Terminal FormGULL WINGGULL WINGGULL WING
Terminal PositionSINGLESINGLESINGLE
Time@Peak Reflow Temperature-Max (s)303030
Transistor ApplicationSWITCHINGSWITCHINGAMPLIFIER
Transistor Element MaterialSILICONSILICONSILICON
VCEsat-Max4 V
## MJD122T4 Alternates Showing resultsImage
Pbfree CodeYesYesYesYes
Actuator MaterialNYLON
Actuator TypeSCREW DRIVER
Additional FeatureO-RING Si RUBBER ACTUATOR SEALHIGH RELIABILITY
Body Breadth10 mm
Body Height6.5 mm
Body Length or Diameter10 mm
Center Contact MaterialPHOSPHOR BRONZE
Center Contact PlatingGOLD OVER NICKEL
Contact Current(DC)-Max0.4 A
Contact (DC) Max Power Rating R Load1.5VA@24VDC
Contact (DC) Max Rating R Load.4A@24VDC
Contact FunctionON-OFF
Contact Resistance0.08 mΩ
Contact TimingBREAK-BEFORE-MAKE
Contact Voltage(DC)-Max24 V
Electrical Life10000 Cycle(s)
End Contact MaterialPHOSPHOR BRONZE
End Contact PlatingGOLD OVER NICKEL
Indexing Angle22.5 deg
Insulation Resistance100000000 Ω
Insulator MaterialTHERMOPLASTIC
Mounting FeatureTHROUGH HOLE-STRAIGHTRADIAL MOUNT
Number of Positions16
Number of Switch Sections1
PCB Hole Count6
Packing MethodTUBEBAG; BOX
SealingMOLDED
SolderabilityWAVE
Switch ActionLATCHED
Switch FunctionBINARY CODED HEXADECIMAL
Switch TypeROTARY CODED SWITCH
Terminal Length0.15 inch
Terminal MaterialBRASS
Termination TypeSOLDER
WashabilitySOLVENT
ConstructionHortizontal Mount
DC Resistance0.037 Ω
Inductance-Nom (L)100 µH
Inductor ApplicationHIGH CURRENT INDUCTOR
Inductor TypeGENERAL PURPOSE INDUCTOR
Lead Diameter1.0668 mm
Lead Spacing28.702 mm
Number of Functions13
Package Diameter32.512 mm
Package Length16.51 mm
Rated Current-Max7 A
Shape/Size DescriptionCYLINDRICAL PACKAGE
ShieldedYES
Terminal PlacementRADIAL
Terminal ShapeWIRE
Test Frequency0.001 MHz
Tolerance15%
ColorHYR-GRE-BLU
Forward Current-Max0.03 A
Lens TypeDIFFUSED WHITE
Luminous Intensity-Nom750.0/1700.0/420.0 mcd
Optoelectronic Device TypeTRIPLE COLOR LED
Overall Height8.6 mm
Peak Wavelength640/520/461 nm
ShapeROUND
Size5 mm
T-codeT-1 3/4
Terminal Pitch1.27 mm
Viewing Angle60 deg
Manufacturer Package Code369C369C
Transition Frequency-Nom (fT)4 MHz4 MHz
Reference StandardAEC-Q101

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Quick Links

PT65103

suggested

2312-H-RC

suggested

MJD122T4Gby onsemi

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

NJVMJD122T4Gby onsemi

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Why Look for Alternatives?

Finding alternatives for MJD122T4 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating MJD122T4 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

Can't Find What You Need?

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FAQ

What is equivalent to MJD122T4?

Known equivalents for MJD122T4 include PT65103, 2312-H-RC, L-154A4SUREQBFZGEW. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of MJD122T4?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify MJD122T4 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.