MCP87055T-U/LC Microchip MOSFET (N-Channel) (Other) In Stock

Microchip MCP87055T-U/LC is an N-channel power MOSFET rated at 25 V and 60 A with an ultra-low 7 mΩ (max) drain-source on-resistance and 162 mJ avalanche energy rating in an 8-pin DFN (PDFN-8) package. Optimized for high-current synchronous buck converters and load switches. From $1.10 in stock worldwide shipping.

OBSOLETEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
MCP87055T-U/LCOther
Quick Facts
Manufacturer
Microchip
Package
Other
Pin Count
8
Lifecycle
OBSOLETE
Category
MOSFET (N-Channel)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Ultra-low 7 mΩ maximum drain-source on-resistance at 60 A enables sub-milliwatt conduction losses in high-current synchronous rectifier and load switch applications up to 25 V
  • 162 mJ avalanche energy rating (Eas) ensures robust handling of voltage spikes during hard switching in inductive load and motor drive circuits without requiring external clamp diodes
  • Compact 8-pin PDFN package with drain-connected thermal pad provides excellent 25 V / 60 A current density in tight board layouts for DC-DC converters and battery protection modules

Applications

The MCP87055T-U/LC is engineered for synchronous buck converter low-side switches, battery protection FETs, and high-current load switches in 12 V to 24 V DC systems requiring 60 A continuous drain current with minimal conduction losses. Its 7 mΩ on-resistance dramatically reduces heat generation in server power delivery networks, multi-cell Li-Ion battery packs, and automotive point-of-load converters compared to conventional MOSFETs at the same current rating. The PDFN-8 package with exposed drain pad also enables efficient thermal spreading to PCB copper planes without clip-on heatsinks.

Specifications

Manufacturer Package CodePDFN-8
YTEOL0
Avalanche Energy Rating (Eas)162mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min25V
Drain Current-Max (ID)60A
Drain-source On Resistance-Max0.007Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)114pF
JESD-30 CodeS-PDSO-N8
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeSQUARE
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Power Dissipation Ambient-Max1.8W
Power Dissipation-Max (Abs)1.8W
Surface MountYES
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormNO LEAD
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)40
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
HTS Code8541.29.00.95

Datasheet

MCP87055T-U/LC Datasheet Download

Official datasheet from Microchip

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What conduction loss does MCP87055T-U/LC produce at 60 A and how does 7 mΩ on-resistance compare to competing devices?

At 60 A continuous drain current, the MCP87055T-U/LC dissipates a maximum of 25.2 W in conduction loss (P = I² × RDS(on) = 60² × 0.007 Ω). Compared to typical 25 V N-channel MOSFETs with 10 mΩ to 15 mΩ on-resistance, the 7 mΩ rating reduces conduction losses by 30% to 50%, directly improving converter efficiency by 0.5 to 1.5 percentage points in synchronous buck designs operating at 10 A to 60 A.

How does MCP87055T-U/LC perform in a 12 V synchronous buck converter for server CPU power delivery?

In a 12 V to 1 V synchronous buck converter for server CPU power delivery at 60 A output, the MCP87055T-U/LC as the low-side synchronous FET maintains 7 mΩ on-resistance during the freewheeling conduction phase, which can last 80% to 95% of each switching cycle at low duty cycles. This low RDS(on) is critical for maintaining above 90% conversion efficiency, while the 162 mJ avalanche rating provides protection against voltage transients from PCB parasitic inductance during high di/dt switching events.

What is the thermal management approach for MCP87055T-U/LC in a high-current load switch design without a heatsink?

The MCP87055T-U/LC uses an 8-pin PDFN package where the drain paddle is exposed on the bottom of the IC and thermally coupled directly to the PCB copper plane. At 60 A with 7 mΩ on-resistance, the 25.2 W maximum power dissipation can be managed by soldering the exposed pad to a 25 cm² copper pour with 2 oz copper weight, achieving a PCB thermal resistance below 3°C/W and keeping junction temperature below 125°C in 25°C ambient conditions.

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Lead Time3-7 business days
MOQFrom 1 piece
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OriginChina (Authorized)

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