MBR1H100SFT3GAlternatives & Equivalent Parts

About MBR1H100SFT3G

MBR1H100SFT3G is a Diode component manufactured by ON Semiconductor. It comes in a Small Outline Diode Flat Lead package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterMBR1H100SFT3GSourceLV2862YDDCRC3216X7R2A105M160AASTD3NK80Z-1CRCW040233K2FKEDPMEG6010CEHGCM155R71H102KA37D
ManufacturerON SemiconductorTexas InstrumentsTDKSTMicroelectronicsVishayNexperiaMurata Electronics
Package TypeSmall Outline Diode Flat LeadSOT23 (6-Pin)Capacitor Chip Non-polarisedTransistor Outline, VerticalOtherSmall Outline DiodeCapacitor Chip Non-polarised
Pin Count2623222
Temperature Range-65.0°C ~ 175.0°C-40.0°C ~ 125.0°C-55.0°C ~ 125.0°C~ 150.0°C-55.0°C ~ 155.0°C-65.0°C ~ 150.0°C-55.0°C ~ 125.0°C
Price$0.0932$0.5471$0.0741$0.6900$0.0017$0.1850$0.0017
StockIn StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVENOT RECOMMENDEDACTIVEACTIVEACTIVEACTIVE
Electrical Parameters
Pbfree CodeYesYesYesYesYes
Manufacturer Package Code498-01
Factory Lead Time8 Weeks24 Weeks13 Weeks
YTEOL6.071536.2136.077
Additional FeatureFREE WHEELING DIODEAVALANCHE RATEDRATED AC VOLTAGE (V): 50
ApplicationPOWEREFFICIENCY
Breakdown Voltage-Min100 V
ConfigurationSINGLESINGLE WITH BUILT-IN DIODESINGLE
Diode Element MaterialSILICONSILICON
Diode TypeRECTIFIER DIODERECTIFIER DIODE
Forward Voltage-Max (VF)0.61 V0.66 V
JESD-30 CodeR-PDSO-F2R-PDSO-G6R-PSIP-T3R-PDSO-F2
JESD-609 Codee3e4e3e3e3e3
Non-rep Pk Forward Current-Max50 A9 A
Number of Elements111
Number of Phases11
Output Current-Max1 A0.6 A1 A
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULAR PACKAGERECTANGULARRECTANGULARRECTANGULAR PACKAGE
Package StyleSMALL OUTLINESMALL OUTLINE, LOW PROFILE, SHRINK PITCHSMTIN-LINESMTSMALL OUTLINESMT
Peak Reflow Temperature (Cel)260260260
Qualification StatusNot QualifiedNot QualifiedNot Qualified
Rep Pk Reverse Voltage-Max100 V60 V
Reverse Current-Max40 µA50 µA
Reverse Test Voltage100 V60 V
Surface MountYESYESYESNOYESYESYES
TechnologySCHOTTKYBICMOSMETAL GLAZE/THICK FILMSCHOTTKY
Terminal FinishMATTE TINNickel/Palladium/Gold (Ni/Pd/Au)Matte Tin (Sn) - with Nickel (Ni) barrierMatte Tin (Sn)Matte Tin (Sn) - with Nickel (Ni) barrierTINTin (Sn) - with Nickel (Ni) barrier
Terminal FormFLATGULL WINGTHROUGH-HOLEFLAT
Terminal PositionDUALDUALSINGLEDUAL
Time@Peak Reflow Temperature-Max (s)303030
Date Of Intro2020-06-06
Analog IC - Other TypeSWITCHING REGULATOR
Control ModeCURRENT-MODE
Control TechniquePULSE WIDTH MODULATION
Input Voltage-Max60 V
Input Voltage-Min4 V
Input Voltage-Nom12 V
Number of Functions1
Number of Outputs1
Output Voltage-Max58 V
Output Voltage-Min0.765 V
Package Equivalence CodeTSSOP6,.11,37
Supply Voltage-Nom (Vsup)12 V
Switcher ConfigurationBUCK
Switching Frequency-Max2100 kHz
Temperature GradeAUTOMOTIVE
Terminal Pitch0.95 mm
## LV2862YDDCR Alternates Showing resultsImage
Reach Compliance CodeCompliantCompliantCompliant
Capacitance1 µF0.001 µF
Capacitor TypeCERAMIC CAPACITORCERAMIC CAPACITOR
Dielectric MaterialCERAMICCERAMIC
Height1.6 mm0.5 mm
Mounting FeatureSURFACE MOUNTSURFACE MOUNTSURFACE MOUNT
MultilayerYesYES
Negative Tolerance20%10%
Packing MethodTR, 7 INCHTR, Paper, 7 Inch180mm Reel W8P2
Positive Tolerance20%10%
Rated (DC) Voltage (URdc)100 V50 V
Size Code120604021005M/0402
Temperature Characteristics CodeX7RX7R
Temperature Coefficient15% ppm/°C15% ppm/°C
Terminal ShapeWRAPAROUNDWRAPAROUNDWRAPAROUND
Avalanche Energy Rating (Eas)170 mJ
DS Breakdown Voltage-Min800 V
Drain Current-Max (ID)2.5 A
Drain-source On Resistance-Max4.5 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-251
Operating ModeENHANCEMENT MODE
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)70 W
Pulsed Drain Current-Max (IDM)10 A
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
ConstructionRectangular
Package Height0.35 mm
Package Length1 mm
Package Width0.5 mm
Rated Power Dissipation (P)0.063 W
Rated Temperature70 °C
Reference StandardAEC-Q200IEC-60134AEC-Q200
Resistance33200 Ω
Resistor TypeFIXED RESISTOR
Tolerance1%
Working Voltage50 V
Power Dissipation-Max0.375 W

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 6 alternatives for MBR1H100SFT3G — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for MBR1H100SFT3G is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating MBR1H100SFT3G replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to MBR1H100SFT3G?

Known equivalents for MBR1H100SFT3G include LV2862YDDCR, C3216X7R2A105M160AA, STD3NK80Z-1. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of MBR1H100SFT3G?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify MBR1H100SFT3G alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.