MBR1H100SFT3GAlternatives & Equivalent Parts
About MBR1H100SFT3G
MBR1H100SFT3G is a Diode component manufactured by ON Semiconductor. It comes in a Small Outline Diode Flat Lead package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Get one quote covering all 6 alternatives for MBR1H100SFT3G — response within 24 hours.
Specification Comparison
| Parameter | MBR1H100SFT3GSource | LV2862YDDCR | C3216X7R2A105M160AA | STD3NK80Z-1 | CRCW040233K2FKED | PMEG6010CEH | GCM155R71H102KA37D |
|---|---|---|---|---|---|---|---|
| Manufacturer | ON Semiconductor | Texas Instruments | TDK | STMicroelectronics | Vishay | Nexperia | Murata Electronics |
| Package Type | Small Outline Diode Flat Lead | SOT23 (6-Pin) | Capacitor Chip Non-polarised | Transistor Outline, Vertical | Other | Small Outline Diode | Capacitor Chip Non-polarised |
| Pin Count | 2 | 6 | 2 | 3 | 2 | 2 | 2 |
| Temperature Range | -65.0°C ~ 175.0°C | -40.0°C ~ 125.0°C | -55.0°C ~ 125.0°C | ~ 150.0°C | -55.0°C ~ 155.0°C | -65.0°C ~ 150.0°C | -55.0°C ~ 125.0°C |
| Price | $0.0932 | $0.5471 | $0.0741 | $0.6900 | $0.0017 | $0.1850 | $0.0017 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | NOT RECOMMENDED | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | |||||||
| Pbfree Code | Yes | Yes | Yes | — | Yes | — | Yes |
| Manufacturer Package Code | 498-01 | — | — | — | — | — | — |
| Factory Lead Time | 8 Weeks | — | 24 Weeks | 13 Weeks | — | — | — |
| YTEOL | 6.07 | 15 | 3 | 6.2 | 13 | 6.07 | 7 |
| Additional Feature | FREE WHEELING DIODE | — | — | AVALANCHE RATED | RATED AC VOLTAGE (V): 50 | — | — |
| Application | POWER | — | — | — | — | EFFICIENCY | — |
| Breakdown Voltage-Min | 100 V | — | — | — | — | — | — |
| Configuration | SINGLE | — | — | SINGLE WITH BUILT-IN DIODE | — | SINGLE | — |
| Diode Element Material | SILICON | — | — | — | — | SILICON | — |
| Diode Type | RECTIFIER DIODE | — | — | — | — | RECTIFIER DIODE | — |
| Forward Voltage-Max (VF) | 0.61 V | — | — | — | — | 0.66 V | — |
| JESD-30 Code | R-PDSO-F2 | R-PDSO-G6 | — | R-PSIP-T3 | — | R-PDSO-F2 | — |
| JESD-609 Code | e3 | e4 | e3 | e3 | — | e3 | e3 |
| Non-rep Pk Forward Current-Max | 50 A | — | — | — | — | 9 A | — |
| Number of Elements | 1 | — | — | 1 | — | 1 | — |
| Number of Phases | 1 | — | — | — | — | 1 | — |
| Output Current-Max | 1 A | 0.6 A | — | — | — | 1 A | — |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | — | PLASTIC/EPOXY | — | PLASTIC/EPOXY | — |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR PACKAGE | RECTANGULAR | — | RECTANGULAR | RECTANGULAR PACKAGE |
| Package Style | SMALL OUTLINE | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | SMT | IN-LINE | SMT | SMALL OUTLINE | SMT |
| Peak Reflow Temperature (Cel) | 260 | 260 | — | — | — | 260 | — |
| Qualification Status | Not Qualified | — | — | Not Qualified | — | Not Qualified | — |
| Rep Pk Reverse Voltage-Max | 100 V | — | — | — | — | 60 V | — |
| Reverse Current-Max | 40 µA | — | — | — | — | 50 µA | — |
| Reverse Test Voltage | 100 V | — | — | — | — | 60 V | — |
| Surface Mount | YES | YES | YES | NO | YES | YES | YES |
| Technology | SCHOTTKY | BICMOS | — | — | METAL GLAZE/THICK FILM | SCHOTTKY | — |
| Terminal Finish | MATTE TIN | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) - with Nickel (Ni) barrier | Matte Tin (Sn) | Matte Tin (Sn) - with Nickel (Ni) barrier | TIN | Tin (Sn) - with Nickel (Ni) barrier |
| Terminal Form | FLAT | GULL WING | — | THROUGH-HOLE | — | FLAT | — |
| Terminal Position | DUAL | DUAL | — | SINGLE | — | DUAL | — |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | — | — | — | 30 | — |
| Date Of Intro | — | 2020-06-06 | — | — | — | — | — |
| Analog IC - Other Type | — | SWITCHING REGULATOR | — | — | — | — | — |
| Control Mode | — | CURRENT-MODE | — | — | — | — | — |
| Control Technique | — | PULSE WIDTH MODULATION | — | — | — | — | — |
| Input Voltage-Max | — | 60 V | — | — | — | — | — |
| Input Voltage-Min | — | 4 V | — | — | — | — | — |
| Input Voltage-Nom | — | 12 V | — | — | — | — | — |
| Number of Functions | — | 1 | — | — | — | — | — |
| Number of Outputs | — | 1 | — | — | — | — | — |
| Output Voltage-Max | — | 58 V | — | — | — | — | — |
| Output Voltage-Min | — | 0.765 V | — | — | — | — | — |
| Package Equivalence Code | — | TSSOP6,.11,37 | — | — | — | — | — |
| Supply Voltage-Nom (Vsup) | — | 12 V | — | — | — | — | — |
| Switcher Configuration | — | BUCK | — | — | — | — | — |
| Switching Frequency-Max | — | 2100 kHz | — | — | — | — | — |
| Temperature Grade | — | AUTOMOTIVE | — | — | — | — | — |
| Terminal Pitch | — | 0.95 mm | — | — | — | — | — |
| ## LV2862YDDCR Alternates Showing results | — | Image | — | — | — | — | — |
| Reach Compliance Code | — | — | Compliant | — | Compliant | — | Compliant |
| Capacitance | — | — | 1 µF | — | — | — | 0.001 µF |
| Capacitor Type | — | — | CERAMIC CAPACITOR | — | — | — | CERAMIC CAPACITOR |
| Dielectric Material | — | — | CERAMIC | — | — | — | CERAMIC |
| Height | — | — | 1.6 mm | — | — | — | 0.5 mm |
| Mounting Feature | — | — | SURFACE MOUNT | — | SURFACE MOUNT | — | SURFACE MOUNT |
| Multilayer | — | — | Yes | — | — | — | YES |
| Negative Tolerance | — | — | 20% | — | — | — | 10% |
| Packing Method | — | — | TR, 7 INCH | — | TR, Paper, 7 Inch | — | 180mm Reel W8P2 |
| Positive Tolerance | — | — | 20% | — | — | — | 10% |
| Rated (DC) Voltage (URdc) | — | — | 100 V | — | — | — | 50 V |
| Size Code | — | — | 1206 | — | 0402 | — | 1005M/0402 |
| Temperature Characteristics Code | — | — | X7R | — | — | — | X7R |
| Temperature Coefficient | — | — | 15% ppm/°C | — | — | — | 15% ppm/°C |
| Terminal Shape | — | — | WRAPAROUND | — | WRAPAROUND | — | WRAPAROUND |
| Avalanche Energy Rating (Eas) | — | — | — | 170 mJ | — | — | — |
| DS Breakdown Voltage-Min | — | — | — | 800 V | — | — | — |
| Drain Current-Max (ID) | — | — | — | 2.5 A | — | — | — |
| Drain-source On Resistance-Max | — | — | — | 4.5 Ω | — | — | — |
| FET Technology | — | — | — | METAL-OXIDE SEMICONDUCTOR | — | — | — |
| JEDEC-95 Code | — | — | — | TO-251 | — | — | — |
| Operating Mode | — | — | — | ENHANCEMENT MODE | — | — | — |
| Polarity/Channel Type | — | — | — | N-CHANNEL | — | — | — |
| Power Dissipation-Max (Abs) | — | — | — | 70 W | — | — | — |
| Pulsed Drain Current-Max (IDM) | — | — | — | 10 A | — | — | — |
| Transistor Application | — | — | — | SWITCHING | — | — | — |
| Transistor Element Material | — | — | — | SILICON | — | — | — |
| Construction | — | — | — | — | Rectangular | — | — |
| Package Height | — | — | — | — | 0.35 mm | — | — |
| Package Length | — | — | — | — | 1 mm | — | — |
| Package Width | — | — | — | — | 0.5 mm | — | — |
| Rated Power Dissipation (P) | — | — | — | — | 0.063 W | — | — |
| Rated Temperature | — | — | — | — | 70 °C | — | — |
| Reference Standard | — | — | — | — | AEC-Q200 | IEC-60134 | AEC-Q200 |
| Resistance | — | — | — | — | 33200 Ω | — | — |
| Resistor Type | — | — | — | — | FIXED RESISTOR | — | — |
| Tolerance | — | — | — | — | 1% | — | — |
| Working Voltage | — | — | — | — | 50 V | — | — |
| Power Dissipation-Max | — | — | — | — | — | 0.375 W | — |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 6 alternatives for MBR1H100SFT3G — response within 24 hours.
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Why Look for Alternatives?
Finding alternatives for MBR1H100SFT3G is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating MBR1H100SFT3G replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to MBR1H100SFT3G?
Known equivalents for MBR1H100SFT3G include LV2862YDDCR, C3216X7R2A105M160AA, STD3NK80Z-1. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of MBR1H100SFT3G?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify MBR1H100SFT3G alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.