MAX22701EASA+T Analog Devices Integrated Circuit (Small Outline Packages) In Stock
The MAX22701EASA+T is an ultra-high CMTI isolated gate driver optimized for Silicon Carbide (SiC) MOSFETs and IGBTs. It provides strong peak gate drive current with high common-mode transient immunity to reliably switch wide-bandgap devices at high dV/dt rates. Packaged in an 8-SOIC for industrial inverter and EV power conversion designs.
- Manufacturer
- Analog Devices
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- MAX22701EASA+T Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $2.1300(MOQ 1000)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of MAX22701EASA+T?
- Ultra-high CMTI for reliable SiC MOSFET and IGBT gate driving at high dV/dt switching rates
- Isolated gate driver architecture with 8-SOIC package for compact power stage layouts
- Peak reflow temperature tolerance up to 260°C enabling standard SMT assembly
- RoHS-compliant e3 rating with matte tin terminal finish
- Introduced 2019, active lifecycle with 9-year YTEOL for long-term supply planning
What is MAX22701EASA+T used for?
The MAX22701EASA+T is designed for isolated gate driving of SiC MOSFETs and IGBTs in high-efficiency power converters such as EV traction inverters, solar PV inverters, and industrial motor drives, where wide-bandgap devices switch at dV/dt rates exceeding 50 V/ns. Its ultra-high CMTI ensures gate drive signal integrity under the severe common-mode transients present in bridge inverter topologies.
What are the specifications of MAX22701EASA+T?
| Manufacturer Package Code | 8-SOIC_N-150_MIL |
| Date Of Intro | 2019-11-18 |
| YTEOL | 9 |
| Interface IC Type | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
| JESD-609 Code | e3 |
| Peak Reflow Temperature (Cel) | 260 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 3 |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.60 |
| Country of Origin | Japan, Mainland China, Malaysia, Philippines, Singapore, South Korea, Taiwan, Thailand, USA |
Where can I find the MAX22701EASA+T datasheet?
MAX22701EASA+T Datasheet DownloadOfficial datasheet from Analog Devices
What are equivalent replacements for MAX22701EASA+T?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Why is ultra-high CMTI critical when driving SiC MOSFETs in bridge inverter topologies with the MAX22701EASA+T?
SiC MOSFETs switch at dV/dt rates that can exceed 50 V/ns, generating large common-mode transients across the isolation barrier. The MAX22701EASA+T's ultra-high CMTI rating ensures the gate drive signal is not corrupted during these transients, preventing false turn-on or turn-off events in 3-phase inverter half-bridge stages operating at voltages up to 1200 V.
What package does the MAX22701EASA+T use, and how does it fit within a power converter gate driver PCB layout?
The MAX22701EASA+T is available in an 8-SOIC (150-mil width) package, which provides an 8-pin through-hole-compatible footprint suitable for standard SMT assembly with a peak reflow temperature of 260°C. The narrow SOIC body fits easily alongside bootstrap or isolated power supply circuits in compact half-bridge gate driver daughter boards.
How does MAX22701EASA+T compare to standard Si IGBT gate drivers when upgrading to SiC power stages?
Standard Si IGBT gate drivers are typically rated for CMTI of 25 kV/µs to 50 kV/µs, whereas SiC switching events demand 100 kV/µs or higher. The MAX22701EASA+T is specifically designed for ultra-high CMTI to match SiC dV/dt requirements, making it a necessary upgrade rather than a direct drop-in from a conventional IGBT driver when migrating to SiC in a 600 V or 1200 V power stage.
What is the long-term supply outlook for MAX22701EASA+T and what compliance certifications apply?
The MAX22701EASA+T was introduced in November 2019 and has a YTEOL of 9 years, indicating active production support well into the 2020s. The part carries a JESD-609 e3 (lead-free) rating and matte tin terminal finish, confirming RoHS compliance for EV, industrial, and renewable energy applications requiring green component sourcing.
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Why Buy from FindMyChip
About Analog Devices
Analog Devices (ADI) is a global leader in high-performance analog, mixed-signal, and digital signal processing integrated circuits used in virtually all types of electronic equipment.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1000+ | $2.1300 | $2130.00 |
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