MA4P7104F-1072T MACOM Diode (Diodes Chip) In Stock

The MACOM MA4P7104F-1072T is a single PIN diode optimized for RF attenuator and switching applications from 0.1MHz to 1500MHz with a maximum junction capacitance of 1pF and a reverse breakdown voltage of 400V. Its low-distortion chip package in CASE 1072 delivers excellent linearity for precision RF control circuits. Available in stock with worldwide shipping.

TRANSFERREDDiodeVerified Jun 2026
Package / Visual Reference
MA4P7104F-1072TDiodes Chip
Quick Facts
Manufacturer
MACOM
Package
Diodes Chip
Pin Count
2
Lifecycle
TRANSFERRED
Category
Diode
Price
From $3.6800(MOQ 19)
Temp Range
?°C to 175.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Wide RF frequency range from 0.1MHz to 1500MHz makes it suitable for attenuators and switches across HF, VHF, and UHF bands
  • Ultra-low junction capacitance of 1pF maximum at reverse bias enables high-isolation switching with minimal parasitic degradation
  • 400V reverse breakdown voltage and isolated case connection provide robust protection in high-power attenuator and switching circuits

Applications

The MACOM MA4P7104F-1072T is designed for use in RF attenuator pads, PIN diode switch matrices, and automatic level control circuits in telecommunications base stations, radar front ends, and test instrumentation covering the 0.1MHz to 1500MHz frequency range. Its low-distortion chip configuration with 1pF junction capacitance and 400V breakdown makes it especially effective in high-dynamic-range receiver protection switches and precision variable attenuators where linearity and reverse voltage compliance are critical.

Specifications

Pbfree CodeYes
Manufacturer Package CodeCASE 1072
YTEOL5.45
Additional FeatureLOW DISTORTION
ApplicationATTENUATOR; SWITCHING
Breakdown Voltage-Min400V
Case ConnectionISOLATED
ConfigurationSINGLE
Diode Capacitance-Max1pF
Diode Capacitance-Nom1pF
Diode Element MaterialSILICON
Diode Forward Resistance-Max0.5Ω
Diode Res Test Current100mA
Diode Res Test Frequency100MHz
Diode TypePIN DIODE
Frequency BandHIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 CodeO-CELF-R2
Minority Carrier Lifetime-Nom2.5 µs
Number of Elements1
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleLONG FORM
Peak Reflow Temperature (Cel)NOT SPECIFIED
Power Dissipation-Max3W
Qualification StatusNot Qualified
Reverse Test Voltage100V
Surface MountYES
TechnologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal FormWRAP AROUND
Terminal PositionEND
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
PackageDiodes Chip

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
HTS Code8541.10.00.80

Datasheet

MA4P7104F-1072T Datasheet Download

Official datasheet from MACOM

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

Over what frequency range can the MA4P7104F-1072T be used, and what switching applications does it support?

The MA4P7104F-1072T operates from 0.1MHz to 1500MHz, covering the HF, VHF, and UHF bands. It is specifically rated for attenuator and switching applications in this range, with a maximum junction capacitance of 1pF that limits parasitic signal leakage, making it suitable for RF switch matrices, PIN diode attenuator networks, and antenna switching circuits in communications and radar systems.

How does the 1pF junction capacitance of the MA4P7104F-1072T affect isolation performance in an RF switch design?

A junction capacitance of 1pF creates an impedance of approximately 106Ω at 1500MHz, which is the upper limit of the device's frequency range. This low capacitance maintains high reverse isolation across the operating band, typically enabling more than 20dB isolation in standard PIN diode switch topologies. Minimising parasitic capacitance is critical in wide-band RF designs where even a few picofarads can degrade isolation by 10dB or more.

Why is the 400V reverse breakdown voltage of the MA4P7104F-1072T important for RF power applications?

The 400V reverse breakdown voltage ensures that the MA4P7104F-1072T can withstand high peak RF voltages present in transmit-path switching and high-power attenuator stages. In a 50Ω system, 400V peak corresponds to a peak power of approximately 1600W for very short pulse durations, making this diode robust enough for radar transmit-receive switches and pulsed RF applications where transient voltage spikes exceed normal operating levels.

What is the CASE 1072 package of the MA4P7104F-1072T, and how does an isolated case connection benefit circuit design?

The CASE 1072 is a chip-style package with an isolated case, meaning the package body is not electrically connected to either diode terminal. This isolation eliminates parasitic ground paths through the mounting substrate, which reduces unwanted coupling between the diode and its heatsink or PCB ground plane by typically 10dB to 20dB in microwave assemblies. The isolated configuration simplifies bias network design by allowing the diode to be biased independently of the mechanical mounting structure.

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About MACOM

MACOM is a leading electronic component manufacturer. FindMyChip sources MACOM ICs directly from authorized China distributors, offering competitive pricing and reliable stock.

AvailabilityIn Stock
Reference Price (USD)
From $3.6800
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
19+$3.6800$69.92
pcs
Unit price: $3.6800 · Total: $69.92

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

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