LTC4357HMS8#PBF Analog Devices Integrated Circuit (Small Outline Packages) In Stock
Analog Devices LTC4357HMS8#PBF is a positive high-voltage ideal diode controller in an 8-pin MSOP package. It drives an external N-channel MOSFET to emulate a low-loss ideal diode, supporting supply voltages up to 100 V. Available from stock with worldwide shipping.
- Manufacturer
- Analog Devices
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- LTC4357HMS8#PBF Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $3.2700(MOQ 1)
- Temp Range
- -40.0°C to 125.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Positive high-voltage ideal diode controller driving an external N-channel MOSFET with sub-milliohm effective forward resistance to replace Schottky diodes
- Supports input voltages up to 100 V, enabling use in high-voltage industrial, automotive, and telecom power systems
- Single-channel 8-pin MSOP package with automatic forward/reverse blocking for seamless ORing and input fault protection
Applications
The LTC4357HMS8#PBF is used in power supply ORing circuits where two or more supply rails must share a common output bus without reverse current flow, common in telecom servers and redundant power systems. It replaces lossy Schottky diodes with an N-channel MOSFET controlled to behave as a near-ideal diode, dramatically reducing conduction losses at high load currents. Industrial equipment with 24 V to 48 V bus architectures and automotive backup power systems also benefit from its wide 100 V operating range.
Specifications
| Pbfree Code | No |
| Manufacturer Package Code | 05-08-1660 |
| YTEOL | 10 |
| Adjustable Threshold | NO |
| Analog IC - Other Type | INPUT FAULT PROTECTION CONTROLLER |
| JESD-30 Code | S-PDSO-G8 |
| JESD-609 Code | e3 |
| Number of Channels | 1 |
| Number of Functions | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| Peak Reflow Temperature (Cel) | 260 |
| Qualification Status | Not Qualified |
| Supply Current-Max (Isup) | 1.25mA |
| Supply Voltage-Max (Vsup) | 80V |
| Supply Voltage-Min (Vsup) | 9V |
| Supply Voltage-Nom (Vsup) | 20V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | AUTOMOTIVE |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Pitch | 0.65mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.01 |
| Country of Origin | Malaysia |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum input voltage the LTC4357HMS8#PBF ideal diode controller can handle?
The LTC4357HMS8#PBF supports an input voltage range up to 100 V, making it suitable for high-voltage industrial 48 V bus systems, automotive 24 V/48 V architectures, and telecom -48 V supplies where standard Schottky diodes would suffer from excessive forward drop and heat.
How does the LTC4357HMS8#PBF reduce power loss compared to a Schottky diode in a redundant power supply?
The LTC4357HMS8#PBF controls an external N-channel MOSFET whose RDS(on) can be as low as a few milliohms, giving a forward voltage drop of only a few millivolts at typical load currents. A Schottky diode typically drops 0.3 V to 0.5 V, so replacing it with an LTC4357-controlled MOSFET can cut ORing losses by more than 10x at 10 A load.
In which applications is the LTC4357HMS8#PBF most commonly used?
The LTC4357HMS8#PBF is most common in N+1 redundant server power supplies, telecom rectifier systems with -48 V bus, and industrial UPS ORing stages. Any system requiring 1-channel ideal diode function with blocking voltages up to 100 V and minimal insertion loss can use this device.
What external MOSFET specifications should be matched to the LTC4357HMS8#PBF for a 48 V bus design?
For a 48 V bus application with the LTC4357HMS8#PBF, the external N-channel MOSFET should be rated for at least 60 V drain-to-source voltage, have an RDS(on) below 5 milliohms at 10 V gate drive, and carry the required continuous drain current with adequate thermal margin. Gate charge should be under 100 nC for fast switching response.
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About Analog Devices
Analog Devices (ADI) is a global leader in high-performance analog, mixed-signal, and digital signal processing integrated circuits used in virtually all types of electronic equipment.
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