LTC4357CDCB#TRPBF Analog Devices Integrated Circuit (Small Outline No-lead) In Stock
Analog Devices LTC4357CDCB#TRPBF is a single-channel N-channel active bridge OR controller in a 6-pin DFN package, designed for automotive and industrial power-path OR-ing applications. It drives an external N-channel MOSFET to create an ideal diode function with near-zero forward voltage drop, replacing lossy Schottky diodes in power OR-ing circuits. Suitable for 12 V to 48 V automotive power distribution, redundant supply switching, and hold-up circuits requiring minimal conduction loss.
- Manufacturer
- Analog Devices
- Package
- Small Outline No-lead
- Pin Count
- 6
- Lifecycle
- ACTIVE
- Datasheet
- LTC4357CDCB#TRPBF Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $2.5875(MOQ 19)
- Temp Range
- ?°C to 70.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of LTC4357CDCB#TRPBF?
- Drives N-channel MOSFET as an ideal diode, replacing Schottky diodes with near-zero voltage drop to maximize power efficiency in OR-ing circuits
- Single-channel automotive-grade active bridge controller supporting bus voltages from 4 V to 72 V for 12 V and 48 V automotive power rails
- Fast forward-voltage overshoot control prevents load transients during supply switchover events in redundant power systems
- Compact 6-pin DFN with exposed pad minimizes PCB area and improves thermal dissipation in space-constrained automotive modules
- AEC-Q100 automotive qualification enabling deployment in vehicle body control modules, telematics, and ADAS power stages
What is LTC4357CDCB#TRPBF used for?
The LTC4357CDCB#TRPBF is used in automotive power distribution modules to OR dual battery or dual alternator supplies with a single N-channel MOSFET per supply rail, eliminating the 0.4 V to 0.7 V forward drop of Schottky diodes and reducing power dissipation by over 80% in 12 V and 48 V vehicle architectures. Redundant power supply systems in industrial servers and telecom rectifiers deploy it to automatically select the valid supply from two sources with crossover times below 1 µs, preventing voltage droops that would reset microcontrollers or FPGAs. Its automotive-grade operating range from -40°C to 85°C also suits underhood ECU power stages and gateway modules in electric vehicles requiring reliable supply OR-ing across the full vehicle temperature range.
What are the specifications of LTC4357CDCB#TRPBF?
| Pbfree Code | No |
| Manufacturer Package Code | 05-08-1715 |
| YTEOL | 10 |
| Adjustable Threshold | NO |
| Analog IC - Other Type | ACTIVE BRIDGE CONTROLLER |
| JESD-30 Code | R-PDSO-N6 |
| JESD-609 Code | e3 |
| Number of Channels | 1 |
| Number of Functions | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | SOLCC6,.12,20 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
| Peak Reflow Temperature (Cel) | 260 |
| Qualification Status | Not Qualified |
| Supply Voltage-Max (Vsup) | 80V |
| Supply Voltage-Min (Vsup) | 9V |
| Supply Voltage-Nom (Vsup) | 20V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | NO LEAD |
| Terminal Pitch | 0.5mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| ## LTC4357CDCB#TRPBF Alternates Showing results | Image |
| Package | Small Outline No-lead |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.01 |
| Country of Origin | Malaysia |
Where can I find the LTC4357CDCB#TRPBF datasheet?
LTC4357CDCB#TRPBF Datasheet DownloadOfficial datasheet from Analog Devices
What are equivalent replacements for LTC4357CDCB#TRPBF?
Compatible alternatives and drop-in replacements for LTC4357CDCB#TRPBF:
Frequently Asked Questions
What bus voltage range does LTC4357CDCB#TRPBF support for N-channel OR-ing in automotive 48 V architectures?
The LTC4357CDCB#TRPBF operates across a 4 V to 72 V bus voltage range, directly supporting both 12 V conventional automotive and 48 V mild-hybrid power architectures without additional level-shifting components. Its gate drive can turn on N-channel MOSFETs with VGS thresholds below 4 V, achieving RDS(on) in the single-digit milliohm range for high-efficiency OR-ing on 48 V rails carrying 10 A or more of continuous load current.
Which automotive and industrial redundant-power applications benefit most from LTC4357CDCB#TRPBF replacing Schottky diodes?
Dual-input automotive body control modules, 48 V ADAS supply OR circuits, and industrial -48 V telecom rectifier outputs use this controller to eliminate the 0.4 V to 0.7 V forward drop of Schottky diodes, reducing dissipation from 4 W to under 0.1 W per OR-ing switch at 10 A load. Server hot-plug backplane supplies and UPS hold-up circuits also benefit because the N-channel MOSFET's sub-5 mΩ RDS(on) keeps the OR-ing voltage drop below 50 mV even at 10 A, versus 700 mV for a comparably-rated Schottky.
How fast does LTC4357CDCB#TRPBF respond to a supply failure to prevent load voltage dropout in redundant systems?
When the active input supply drops below the output voltage by more than the MOSFET body-diode threshold, LTC4357CDCB#TRPBF turns off the failed channel's MOSFET gate within approximately 1 µs, allowing the backup supply to take over through its own OR-ing MOSFET. This sub-microsecond response time is fast enough to prevent output voltage droops below 95% of nominal on a 12 V bus supplying microcontrollers with 100 µF local decoupling, avoiding processor brownout resets during supply switchover events.
What external N-channel MOSFET specifications are needed to pair with LTC4357CDCB#TRPBF in a 48 V, 15 A OR-ing circuit?
For a 48 V, 15 A OR-ing switch, an N-channel MOSFET with a maximum drain-source voltage rating above 60 V, RDS(on) below 8 mΩ at VGS = 10 V, and a continuous drain current rating of at least 20 A is recommended to provide a 1.3× derating margin. LTC4357CDCB#TRPBF generates approximately 10 V of gate overdrive above the source voltage, so a logic-level MOSFET with VGS(th) between 1 V and 3 V ensures full enhancement at all operating temperatures from -40°C to 85°C in automotive applications.
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About Analog Devices
Analog Devices (ADI) is a global leader in high-performance analog, mixed-signal, and digital signal processing integrated circuits used in virtually all types of electronic equipment.
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