LT1013IS8#PBFAlternatives & Equivalent Parts

About LT1013IS8#PBF

LT1013IS8#PBF is a Integrated Circuit component manufactured by Analog Devices. It comes in a Small Outline Packages package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterLT1013IS8#PBFSourceNVF2955T1G
ManufacturerAnalog DevicesON Semiconductor
Package TypeSmall Outline PackagesSOT223 (3-Pin)
Pin Count84
Temperature Range-40.0°C ~ 85.0°C~ 175.0°C
Price$4.4060$0.4677
StockIn StockIn Stock
LifecycleACTIVEACTIVE
Electrical Parameters
Pbfree CodeNoYes
Manufacturer Package Code05-08-1610 (S8)0.0318
YTEOL105
Amplifier TypeOPERATIONAL AMPLIFIER—
ArchitectureVOLTAGE-FEEDBACK—
Average Bias Current-Max (IIB)0.038 µA—
Bias Current-Max (IIB) @25C0.005 µA—
Common-mode Reject Ratio-Min97 dB—
Common-mode Reject Ratio-Nom113 dB—
Frequency CompensationYES—
Input Offset Voltage-Max400 µV—
JESD-30 CodeR-PDSO-G8R-PDSO-G4
JESD-609 Codee3e3
Low-BiasYES—
Low-OffsetYES—
MicropowerYES—
Neg Supply Voltage Limit-Max-22 V—
Neg Supply Voltage-Nom (Vsup)-15 V—
Number of Functions2—
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXY
Package Equivalence CodeSOP8,.25—
Package ShapeRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINE
Peak Reflow Temperature (Cel)260260
PowerNO—
Programmable PowerNO—
Qualification StatusNot Qualified—
Slew Rate-Min0.2 V/us—
Slew Rate-Nom0.4 V/us—
Supply Current-Max0.5 mA—
Supply Voltage Limit-Max22 V—
Supply Voltage-Nom (Vsup)15 V—
Surface MountYESYES
TechnologyBIPOLAR—
Temperature GradeINDUSTRIAL—
Terminal FinishMatte Tin (Sn) - annealedMatte Tin (Sn) - annealed
Terminal FormGULL WINGGULL WING
Terminal Pitch1.27 mm—
Terminal PositionDUALDUAL
Time@Peak Reflow Temperature-Max (s)3030
Voltage Gain-Min500000—
WidebandNO—
## LT1013IS8#PBF Alternates Showing resultsImage—
Factory Lead Time—9 Weeks
Avalanche Energy Rating (Eas)—225 mJ
Case Connection—DRAIN
Configuration—SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min—60 V
Drain Current-Max (ID)—1.7 A
Drain-source On Resistance-Max—0.185 Ω
FET Technology—METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code—TO-261AA
Number of Elements—1
Operating Mode—ENHANCEMENT MODE
Polarity/Channel Type—P-CHANNEL
Power Dissipation-Max (Abs)—2.3 W
Pulsed Drain Current-Max (IDM)—17 A
Reference Standard—AEC-Q101
Transistor Application—SWITCHING
Transistor Element Material—SILICON

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Why Look for Alternatives?

Finding alternatives for LT1013IS8#PBF is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating LT1013IS8#PBF replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to LT1013IS8#PBF?

Known equivalents for LT1013IS8#PBF include NVF2955T1G. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of LT1013IS8#PBF?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify LT1013IS8#PBF alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.