LND150N3-GAlternatives & Equivalent Parts

About LND150N3-G

LND150N3-G is a MOSFET (N-Channel) component manufactured by Microchip. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterLND150N3-GSourceIRF830APBFSTPSC20065WY
ManufacturerMicrochipVishaySTMicroelectronics
Package TypeOtherTransistor Outline, VerticalTransistor Outline, Vertical
Pin Count332
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-40.0°C ~ 175.0°C
Price$0.4466$0.3900$2.9300
StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVE
Electrical Parameters
Manufacturer Package CodeTO-92-3
Factory Lead Time6 Weeks8 Weeks25 Weeks
YTEOL85.86
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE
DS Breakdown Voltage-Min500 V500 V
Drain Current-Max (ID)0.03 A5 A
Drain-source On Resistance-Max1000 Ω1.4 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)1 pF4.3 pF
JEDEC-95 CodeTO-92TO-220ABDO-247
JESD-30 CodeO-PBCY-T3R-PSFM-T3R-PSFM-T2
JESD-609 Codee3e3e3
Number of Elements111
Operating ModeDEPLETION MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeROUNDRECTANGULARRECTANGULAR
Package StyleCYLINDRICALFLANGE MOUNTFLANGE MOUNT
Polarity/Channel TypeN-CHANNELN-CHANNEL
Power Dissipation Ambient-Max0.74 W
Power Dissipation-Max (Abs)0.74 W74 W
Qualification StatusNot QualifiedNot Qualified
Surface MountNONONO
Terminal FinishMatte Tin (Sn)MATTE TINMatte Tin (Sn) - annealed
Terminal FormTHROUGH-HOLETHROUGH-HOLETHROUGH-HOLE
Terminal PositionBOTTOMSINGLESINGLE
Transistor ApplicationSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICON
## LND150N3-G Alternates Showing resultsImage
Pbfree CodeYes
Avalanche Energy Rating (Eas)230 mJ
Peak Reflow Temperature (Cel)260
Pulsed Drain Current-Max (IDM)20 A
Time@Peak Reflow Temperature-Max (s)30
Additional FeatureFREE WHEELING DIODE
ApplicationHIGH VOLTAGE POWER
Diode Element MaterialSILICON CARBIDE
Diode TypeRECTIFIER DIODE
Forward Voltage-Max (VF)1.45 V
Non-rep Pk Forward Current-Max70 A
Number of Phases1
Output Current-Max20 A
Reference StandardAEC-Q101
Rep Pk Reverse Voltage-Max650 V
Reverse Current-Max300 µA
TechnologySCHOTTKY

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 2 alternatives for LND150N3-G — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for LND150N3-G is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating LND150N3-G replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to LND150N3-G?

Known equivalents for LND150N3-G include IRF830APBF, STPSC20065WY. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of LND150N3-G?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify LND150N3-G alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.