LMG3522R030-Q1 Texas Instruments Integrated Circuit (Other) In Stock
Texas Instruments LMG3522R030-Q1 is an automotive-qualified 650 V, 30 mΩ GaN FET integrating a driver, protection circuits, and temperature reporting in a single package. It enables high-frequency power conversion designs with simplified gate-drive requirements and AEC-Q101 compliance.
- Manufacturer
- Texas Instruments
- Package
- Other
- Pin Count
- 52
- Lifecycle
- ACTIVE
- Datasheet
- LMG3522R030-Q1 Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of LMG3522R030-Q1?
- 650 V breakdown voltage with 30 mΩ on-resistance for high-efficiency switching
- Integrated gate driver eliminates external drive complexity
- On-chip protection: overcurrent, undervoltage lockout, and thermal shutdown
- Integrated temperature reporting for system-level thermal management
- AEC-Q101 qualified for automotive power-conversion applications
What is LMG3522R030-Q1 used for?
The LMG3522R030-Q1 targets automotive on-board chargers, DC-DC converters, and traction inverters where high switching frequency and efficiency are critical. Its integrated driver and protection features reduce component count and design time in 48 V to 400 V automotive power systems.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Where can I find the LMG3522R030-Q1 datasheet?
LMG3522R030-Q1 Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for LMG3522R030-Q1?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the integrated driver in the LMG3522R030-Q1 simplify 650 V GaN power-stage design?
The LMG3522R030-Q1 bundles a 650 V, 30 mΩ GaN FET with a matched gate driver and protection logic in one package, eliminating the need for an external isolated gate driver and reducing PCB area by up to 50% compared with discrete GaN and driver combinations.
What switching frequency can be achieved in an OBC design using the LMG3522R030-Q1?
GaN FETs with 30 mΩ on-resistance and 650 V rating like the LMG3522R030-Q1 typically support switching frequencies of 100 kHz to 1 MHz, enabling significant reductions in transformer and filter size compared with silicon-based designs operating below 100 kHz.
Is the LMG3522R030-Q1 qualified for automotive production supply chains?
Yes, the LMG3522R030-Q1 carries AEC-Q101 qualification for automotive semiconductor applications. The -Q1 suffix confirms this automotive grade, covering operating temperatures up to 150°C junction temperature for under-hood power-conversion use cases.
What protection features are built into the LMG3522R030-Q1 to guard against fault conditions?
The device integrates overcurrent protection, undervoltage lockout (UVLO), and thermal shutdown with temperature reporting via a dedicated TEMP pin. These on-chip protections reduce external protection circuitry and respond in nanoseconds to protect the 650 V GaN power stage.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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