LM5100M Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
The LM5100M is a dual high-side/low-side MOSFET gate driver delivering 1.8A peak source-and-sink current per channel for synchronous buck and half-bridge converter designs. It features under-voltage lockout protection and rail-to-rail output drive, housed in an 8-pin SOIC package.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- LM5100M Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 125.0°C
- RoHS
- Non-compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of LM5100M?
- 1.8A peak source-and-sink gate drive current enables fast turn-on and turn-off of large MOSFETs, reducing switching losses in high-frequency power converters
- Dual independent channels support both high-side and low-side MOSFET drive in synchronous buck, boost, or half-bridge topologies from a single IC
- Integrated under-voltage lockout (UVLO) prevents shoot-through by disabling gate outputs when supply voltage falls below safe operating threshold
What is LM5100M used for?
The LM5100M is used in synchronous buck converters, half-bridge DC/DC converters, and motor H-bridge drivers where fast MOSFET switching at 1.8A gate current reduces transition time and improves efficiency at switching frequencies above 200 kHz. Its dual-channel architecture allows driving both the high-side and low-side switches of a synchronous converter from a single 8-pin SOIC package, saving board space in power supply modules. The UVLO protection makes it appropriate for automotive and industrial power systems with noisy or variable supply rails.
What are the specifications of LM5100M?
| Pbfree Code | No |
| Reach Compliance Code | Compliant |
| YTEOL | 0 |
| Built-in Protections | UNDER VOLTAGE |
| Interface IC Type | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e0 |
| Number of Functions | 1 |
| Output Current Flow Direction | SOURCE AND SINK |
| Output Peak Current Limit-Nom | 1.8A |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 235 |
| Qualification Status | Not Qualified |
| Supply Voltage-Max | 14V |
| Supply Voltage-Min | 9V |
| Supply Voltage-Nom | 12V |
| Surface Mount | YES |
| Temperature Grade | AUTOMOTIVE |
| Terminal Finish | Tin/Lead (Sn85Pb15) |
| Terminal Form | GULL WING |
| Terminal Pitch | 1.27mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Turn-off Time | 0.045 µs |
| Turn-on Time | 0.045 µs |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Non-compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.60 |
Where can I find the LM5100M datasheet?
LM5100M Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for LM5100M?
Compatible alternatives and drop-in replacements for LM5100M:
Frequently Asked Questions
What peak gate drive current does LM5100M provide, and how does this affect MOSFET switching speed in a buck converter?
The LM5100M delivers 1.8A peak gate drive current in both source and sink directions. For a power MOSFET with a gate charge of 30 nC such as a CSD17556Q5B, this enables gate charging in approximately 17 ns, limiting switching transition time to under 30 ns and reducing switching losses by 40% compared to a 500 mA gate driver at the same 300 kHz switching frequency.
How does the under-voltage lockout in LM5100M protect synchronous buck converter MOSFETs during power-up?
The LM5100M's integrated UVLO circuit monitors the VDD supply and disables both gate driver outputs when VDD falls below approximately 8V. This prevents partial gate enhancement of the power MOSFETs during supply ramping, which could cause excessive on-state resistance and destructive shoot-through if both high-side and low-side devices conduct simultaneously during an incomplete power-up sequence.
Can LM5100M drive a half-bridge configuration using both its output channels independently?
Yes. The LM5100M provides 2 independent gate driver channels with separate input logic pins, allowing each channel to control one MOSFET in a half-bridge topology. Each channel sources and sinks up to 1.8A, supporting power MOSFETs with gate charge up to 100 nC at 500 kHz switching frequency. A bootstrap diode and capacitor connected externally enable high-side gate drive above the supply rail for N-channel MOSFET configurations.
Is LM5100M suitable for replacing discrete transistor gate driver circuits in a 12V to 1.8V synchronous converter?
Yes. A discrete totem-pole gate driver using complementary BJT pairs typically delivers 200 to 500 mA peak current with propagation delays above 50 ns. The LM5100M replaces this with 1.8A peak current and under 15 ns propagation delay per channel, while reducing the gate driver circuit from 6 to 8 discrete components down to a single 8-pin SOIC. This improves switching efficiency by 2 to 3% at 500 kHz in a 12V to 1.8V, 10A synchronous buck design.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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