KBL610G GeneSiC Semiconductor Bridge Rectifier (Other) In Stock
GeneSiC Semiconductor KBL610G is a 4-element silicon bridge rectifier with 1000 V minimum breakdown voltage and 1.1 V maximum forward voltage in a 4-pin SIP package. Handles non-repetitive peak forward currents up to 180 A for high-power AC-to-DC conversion. RoHS-compliant with worldwide shipping for industrial and motor drive power supply applications.
- Manufacturer
- GeneSiC Semiconductor
- Package
- Other
- Pin Count
- 4
- Lifecycle
- TRANSFERRED
- Datasheet
- KBL610G Datasheet PDF
- Category
- Bridge Rectifier
- Price
- From $0.4978(MOQ 250)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of KBL610G?
- 1000 V minimum breakdown voltage rating enabling safe rectification from high-voltage AC mains including 480 V three-phase line-to-line inputs with adequate margin
- 180 A non-repetitive peak forward current capacity accommodating large inrush transients in motor drive and welding power supply front-end circuits
- Maximum forward voltage of 1.1 V across all 4 silicon diode elements, keeping rectifier conduction losses low in high-current continuous duty applications
- 4-pin SIP (single inline package) form factor allowing vertical PCB mounting for efficient thermal dissipation via an external heatsink
- RoHS-compliant, lead-free silicon construction meeting global environmental regulations for industrial, EV charging, and renewable energy power systems
What is KBL610G used for?
The KBL610G is designed for high-power single-phase AC-to-DC rectification in industrial motor drives, welding machines, and EV battery chargers operating from 230 V or 480 V AC mains where a 1000 V rated bridge rectifier with high surge current capacity is essential. Its 180 A peak forward current rating handles the large inrush transients seen when charging bulk electrolytic capacitors at power-on, protecting the rectifier junction from thermal damage during startup. Renewable energy inverters, UPS front-end stages, and elevator drive systems also rely on this bridge rectifier for robust, high-voltage AC-to-DC conversion.
What are the specifications of KBL610G?
| Pbfree Code | Yes |
| YTEOL | 6.62 |
| Breakdown Voltage-Min | 1000V |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Forward Voltage-Max (VF) | 1.1V |
| JESD-30 Code | R-PSIP-W4 |
| Non-rep Pk Forward Current-Max | 180A |
| Number of Elements | 4 |
| Number of Phases | 1 |
| Output Current-Max | 6A |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Rep Pk Reverse Voltage-Max | 1000V |
| Surface Mount | NO |
| Terminal Form | WIRE |
| Terminal Position | SINGLE |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.10.00.80 |
Where can I find the KBL610G datasheet?
KBL610G Datasheet DownloadOfficial datasheet from GeneSiC Semiconductor
What are equivalent replacements for KBL610G?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What breakdown voltage does the KBL610G provide, and which AC mains voltage levels can it safely rectify with adequate margin?
The KBL610G has a minimum breakdown voltage of 1000 V, providing ample margin for 480 V AC mains where peak voltage reaches approximately 679 V, leaving over 300 V of safety headroom. It also safely handles 230 V AC single-phase inputs where peak voltage is about 325 V, and 400 V AC three-phase line-to-neutral systems, making it a versatile choice across global industrial mains voltage standards without requiring different part numbers.
How does the 180 A non-repetitive peak forward current of the KBL610G protect a motor drive power stage during startup?
At power-on, a motor drive's bulk DC bus capacitor bank (often 2000 µF or larger) presents a near-short-circuit inrush that can reach 100 to 160 A for 5 to 20 milliseconds. The KBL610G's 180 A non-repetitive peak rating ensures the bridge survives this inrush without junction damage, provided the single pulse energy remains within the device's I²t specification. Engineers typically add a 3 to 10 ohm NTC thermistor in series to limit the inrush below 180 A and prevent repetitive thermal stress on the bridge diodes.
How does the KBL610G's 1.1 V forward voltage affect efficiency in a 10 kW industrial rectifier compared to a lower-Vf Schottky bridge?
At 10 A continuous DC output current, the KBL610G's 1.1 V forward drop across the 2 series-conducting diodes dissipates approximately 22 W of heat (2 × 1.1 V × 10 A), which is about 0.22% of a 10 kW output load. A silicon carbide Schottky bridge with 0.6 V forward voltage would halve this loss to 12 W, saving roughly 10 W. For a 10 kW rectifier this difference is small, but in systems running 24 hours a day at high current, the silicon KBL610G's slightly higher Vf increases annual energy cost by a calculable amount that informs the cost-versus-efficiency tradeoff decision.
What is the SIP package format of the KBL610G and how should heatsinking be arranged for continuous high-current operation?
The KBL610G uses a 4-pin single inline package (R-PSIP-W4) that stands vertically on the PCB, exposing its metal tab or body for external heatsink attachment. For continuous currents above 6 A average, a heatsink with thermal resistance below 10°C/W is required to keep junction temperature below 150°C at 40°C ambient, using thermal interface material between the KBL610G body and heatsink surface. The vertical SIP orientation allows a chassis-mount heatsink or clip-on fin array to attach directly to the package body without additional PCB-side thermal management hardware.
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Why Buy from FindMyChip
About GeneSiC Semiconductor
GeneSiC Semiconductor is a leading electronic component manufacturer. FindMyChip sources GeneSiC Semiconductor ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
More from GeneSiC Semiconductor
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 250+ | $0.6880 | $172.00 |
| 500+ | $0.6330 | $316.50 |
| 1000+ | $0.6290 | $629.00 |
| 2000+ | $0.5837 | $1167.40 |
| 5000+ | $0.5306 | $2653.00 |
| 10000+ | $0.4978 | $4978.10 |
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