IXDN630CI IXYS SEMICONDUCTOR Integrated Circuit (Other) In Stock

The IXYS IXDN630CI is a high-current single-channel IGBT and MOSFET gate driver IC capable of delivering 30 A peak output current, housed in a flange-mount rectangular package for excellent thermal management. It buffers and inverts gate drive signals for large-die power switches in motor drives, inverters, and industrial power conversion systems.

ACTIVEIntegrated CircuitVerified Jun 2026
Package / Visual Reference
IXDN630CIOther
Quick Facts
Manufacturer
IXYS SEMICONDUCTOR
Package
Other
Pin Count
5
Lifecycle
ACTIVE
Category
Integrated Circuit
Temp Range
-40.0°C to 125.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 30 A peak output current enables direct drive of large-die IGBTs and MOSFETs without external buffer transistors
  • Flange-mount rectangular package allows direct attachment to a heatsink, minimising thermal resistance in high-power driver stages
  • Single-channel buffer/inverter topology provides a clean, low-impedance gate drive path for switching frequencies up to several hundred kHz
  • IXYS proprietary process delivers fast propagation delays for precise switching control in high-frequency power conversion topologies

Applications

The IXDN630CI is used in industrial motor drive inverters, three-phase power converters, and high-voltage switch-mode power supplies where driving large IGBT or MOSFET gates with 30 A peak current is essential for fast, low-loss switching transitions. Its flange-mount housing is particularly valuable in traction inverters and UPS systems where the gate driver must be bolted directly to a shared heatsink alongside the power switches to maintain junction temperatures within safe limits.

Specifications

YTEOL6.8
High Side DriverNO
Interface IC TypeBUFFER OR INVERTER BASED IGBT/MOSFET DRIVER
JESD-30 CodeR-XSFM-T5
Number of Functions1
Output Peak Current Limit-Nom30A
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Qualification StatusNot Qualified
Supply Voltage-Max35V
Supply Voltage-Min10V
Supply Voltage-Nom18V
Surface MountNO
Temperature GradeAUTOMOTIVE
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Turn-off Time0.1 µs
Turn-on Time0.1 µs
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
HTS Code8542.39.00.60

Datasheet

IXDN630CI Datasheet Download

Official datasheet from IXYS SEMICONDUCTOR

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What peak output current does the IXDN630CI supply, and how does that reduce switching loss in a high-power IGBT stage?

The IXDN630CI delivers a nominal 30 A peak output current, which is sufficient to charge and discharge the gate capacitance of large IGBT modules with several nF of input capacitance in under 100 ns. Faster gate transitions reduce cross-conduction overlap time in the switch, directly lowering switching energy per cycle and enabling efficient operation at higher carrier frequencies in motor drive inverters.

How does the flange-mount package of the IXDN630CI simplify thermal management in a high-current gate drive design?

The rectangular flange-mount body allows the IXDN630CI to be bolted directly onto a metallic heatsink or chassis, providing a low-thermal-resistance path for the heat generated when switching 30 A gate currents at high repetition rates. This direct mounting approach eliminates the need for insulating pads and keeps the driver junction temperature well below its maximum rating, improving reliability in continuous-duty industrial motor drive and inverter applications operating at ambient temperatures up to 85°C or higher.

For a three-phase motor inverter leg, how many IXDN630CI units are required and what is the typical gate resistor configuration?

Each IXDN630CI drives 1 switch, so a full three-phase inverter bridge requires 6 units—one per IGBT or MOSFET. A typical configuration places a series gate resistor between the IXDN630CI output and the IGBT gate, ranging from 1 Ω to 22 Ω depending on the desired di/dt rate, with the resistor selected to balance switching loss against EMI and voltage overshoot on a 600 V or 1200 V power bus.

What distinguishes the IXDN630CI from lower-current MOSFET gate drivers like a 4 A or 8 A device for the same switching node?

A 4 A or 8 A gate driver would require an external bipolar totem-pole buffer stage to drive a large IGBT gate capacitance of 10 nF or more within 50 ns, adding component count and propagation skew. The IXDN630CI's 30 A peak current eliminates this external buffer, reduces PCB complexity, and shortens the gate loop inductance by consolidating the high-current drive path into a single package that can be mounted within 50 mm of the power switch gate terminal.

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About IXYS SEMICONDUCTOR

IXYS SEMICONDUCTOR is a leading electronic component manufacturer. FindMyChip sources IXYS SEMICONDUCTOR ICs directly from authorized China distributors, offering competitive pricing and reliable stock.

AvailabilityIn Stock
Reference Price (USD)
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pcs

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy