ISO5851DW Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
ISO5851DW is a high-CMTI reinforced isolated IGBT and MOSFET gate driver with 2.5-A source and 5-A sink current capability. It features active protection including DESAT detection, soft turn-off, and fault reporting, making it ideal for industrial motor drives and solar inverters. From $3.178, in stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 16
- Lifecycle
- OBSOLETE
- Datasheet
- ISO5851DW Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $3.1780(MOQ 3)
- Temp Range
- -40.0°C to 125.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of ISO5851DW?
- High Common-Mode Transient Immunity (CMTI) reinforced isolation barrier rated for industrial safety standards
- Asymmetric 2.5-A source / 5-A sink drive current for fast and controlled IGBT/MOSFET switching
- Active protection suite: DESAT desaturation detection, soft turn-off (STO), and fault output reporting
- AND-gate based input logic with gated input characteristics for flexible PWM control
- Supports negative gate voltage (VEE2 down to -15V) for reliable IGBT turn-off in harsh environments
What is ISO5851DW used for?
The ISO5851DW is widely used in industrial motor drive inverters, where its high-CMTI reinforced isolation and active protection features ensure reliable and safe IGBT gate control under high-voltage switching conditions. It is also well-suited for solar and wind power converters, UPS systems, and three-phase inverters, where asymmetric drive currents and DESAT protection help maximize efficiency and prevent shoot-through faults. Additional applications include induction heating equipment and traction drives requiring robust gate driver performance with integrated fault management.
What are the specifications of ISO5851DW?
| Pbfree Code | Yes |
| YTEOL | 0 |
| Additional Feature | ALSO REQUIRED VEE2 SUPPLY -15V TO 0V |
| High Side Driver | NO |
| Input Characteristics | GATED |
| Interface IC Type | AND GATE BASED IGBT/MOSFET DRIVER |
| JESD-30 Code | R-PDSO-G16 |
| JESD-609 Code | e4 |
| Number of Channels | 1 |
| Number of Functions | 1 |
| Output Characteristics | OPEN-DRAIN |
| Output Current-Max | 5A |
| Output Peak Current Limit-Nom | 2.5A |
| Output Polarity | TRUE |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | SOP16,.4 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Qualification Status | Not Qualified |
| Supply Current-Max | 4.5mA |
| Supply Voltage-Max | 5.5V |
| Supply Voltage-Min | 3V |
| Supply Voltage-Nom | 5V |
| Supply Voltage1-Max | 30V |
| Supply Voltage1-Min | 15V |
| Surface Mount | YES |
| Temperature Grade | AUTOMOTIVE |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | GULL WING |
| Terminal Pitch | 1.27mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Turn-off Time | 0.11 µs |
| Turn-on Time | 0.11 µs |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 2 |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.60 |
| Country of Origin | Malaysia, Taiwan |
Where can I find the ISO5851DW datasheet?
ISO5851DW Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for ISO5851DW?
Compatible alternatives and drop-in replacements for ISO5851DW:
Frequently Asked Questions
What are the output drive current ratings of the ISO5851DW?
The ISO5851DW provides asymmetric output drive currents: 2.5-A source current and 5-A sink current. This asymmetry allows faster turn-off of IGBTs and MOSFETs, reducing switching losses and improving efficiency in high-power applications such as motor drives and inverters.
Does the ISO5851DW support negative gate voltage for IGBT turn-off?
Yes, the ISO5851DW requires a negative VEE2 supply ranging from -15V to 0V to support negative gate voltage during IGBT turn-off. Applying a negative gate voltage ensures reliable and fast turn-off of IGBTs, preventing unwanted conduction and shoot-through in bridge configurations.
What active protection features does the ISO5851DW include?
The ISO5851DW incorporates DESAT (desaturation) detection, soft turn-off (STO), and a fault reporting output pin. DESAT detection monitors for IGBT overcurrent or short-circuit conditions, soft turn-off reduces voltage spikes during fault shutdown, and the fault output allows the controller to respond quickly to protect the power stage.
What package does the ISO5851DW come in and is it RoHS compliant?
The ISO5851DW is available in a 16-pin Small Outline (SOIC-16, JESD-30 code R-PDSO-G16) wide-body package. It is RoHS compliant (Pb-free, JESD-609 code e4), making it suitable for modern environmentally-conscious designs in industrial and renewable energy equipment.
What are typical applications for the ISO5851DW?
Typical applications include industrial motor drive inverters, solar and wind power converters, three-phase bridge inverters, UPS systems, induction heating equipment, and electric vehicle traction drives. Its reinforced isolation, active protection, and high drive current make it ideal wherever safe and reliable IGBT or MOSFET gate driving is critical.
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Why Buy from FindMyChip
About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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