IRFPG50PBF Vishay MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
Vishay IRFPG50PBF is an N-channel power MOSFET rated at 1000 V and 6.1 A in a through-hole TO-247 vertical package. Features 2 Ω RDS(on) and 800 mJ avalanche energy rating. RoHS-compliant; worldwide shipping available.
- Manufacturer
- Vishay
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- IRFPG50PBF Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.4504(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IRFPG50PBF?
- Ultra-high 1000 V drain-source breakdown voltage for offline mains and high-voltage industrial switching
- 6.1 A continuous drain current with 2 Ω RDS(on) balancing voltage rating and conduction efficiency
- 800 mJ avalanche energy rating providing exceptional robustness in unclamped inductive switching
- Built-in body diode supporting freewheeling current in flyback and resonant converter topologies
- TO-247 vertical through-hole package with drain-tab connection for bolt-on heatsink cooling
- Pb-free construction (RoHS-compliant) with 8-week factory lead time for supply chain flexibility
What is IRFPG50PBF used for?
The IRFPG50PBF is designed for high-voltage power conversion in switch-mode power supply primary switches, high-voltage motor drives, electronic ballasts, and energy storage inverters operating from rectified mains or high-voltage bus rails up to 1000 V. Its TO-247 through-hole package with exposed drain tab enables direct attachment to chassis or external heatsinks, facilitating efficient thermal management in medium-to-high power designs. The 800 mJ avalanche energy rating makes it one of the more rugged choices for designs subject to transient voltage stress.
What are the specifications of IRFPG50PBF?
| Pbfree Code | Yes |
| Factory Lead Time | 8Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 800mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1000V |
| Drain Current-Max (ID) | 6.1A |
| Drain-source On Resistance-Max | 2Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247AC |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 190W |
| Pulsed Drain Current-Max (IDM) | 24A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Israel |
Where can I find the IRFPG50PBF datasheet?
IRFPG50PBF Datasheet DownloadOfficial datasheet from Vishay
What are equivalent replacements for IRFPG50PBF?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain-source voltage and current can the IRFPG50PBF sustain, and what topologies benefit from these ratings?
The IRFPG50PBF is rated for 1000 V drain-source voltage and 6.1 A continuous drain current. These specifications make it well-suited for offline flyback converters, forward converters, and high-voltage resonant topologies where rectified mains voltages approach 400 V DC and additional design margin above 600 V is needed to absorb switching transients safely.
How significant is the 800 mJ avalanche energy rating of the IRFPG50PBF compared to typical MOSFETs?
An avalanche energy rating of 800 mJ is exceptionally high for a 1000 V MOSFET, providing substantial margin when leakage inductance or parasitic elements generate voltage spikes beyond the 1000 V breakdown threshold during switching transitions. Many comparable 1000 V devices are rated at 200–400 mJ, so the IRFPG50PBF is notably more rugged in unclamped inductive switching scenarios.
What mounting and thermal management options does the TO-247 package of the IRFPG50PBF support?
The IRFPG50PBF uses a TO-247 through-hole vertical package with the drain connected to the metal tab. This tab can be bolted directly to an aluminum heatsink or chassis using standard TO-247 mounting hardware and an insulating pad, enabling thermal resistances well below 1°C/W with adequate heatsink selection. The through-hole leads also allow wave soldering or manual assembly for prototype and low-volume production.
What is the lead time for IRFPG50PBF and when should it be chosen over lower-voltage alternatives?
The IRFPG50PBF has a factory lead time of approximately 8 weeks, making it more readily available than many high-voltage devices. It should be chosen over 600 V or 800 V alternatives when the application bus voltage, plus transient spikes, exceed 600–800 V, or when the 800 mJ avalanche rating provides design safety margin that lower-rated 1000 V alternatives cannot offer.
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Why Buy from FindMyChip
About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.6300 | $3.63 |
| 4+ | $2.5702 | $10.28 |
| 120+ | $1.6736 | $200.83 |
| 155+ | $1.6178 | $250.76 |
| 207+ | $1.4504 | $300.23 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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