IRFP4568PBF Infineon Integrated Circuit (Transistor Outline, Vertical) In Stock

Infineon IRFP4568PBF is a high-current N-channel power MOSFET with 150V drain-source breakdown voltage, 171A max drain current, and ultra-low 5.9 mΩ on-resistance in a TO-247AC package. Features a built-in body diode and 763 mJ avalanche energy rating. Available from stock with worldwide shipping.

OBSOLETEIntegrated CircuitVerified Jun 2026
Package / Visual Reference
IRFP4568PBFTransistor Outline, Vertical
Quick Facts
Manufacturer
Infineon
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
OBSOLETE
Category
Integrated Circuit
Temp Range
?°C to 175.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 150 V drain-source breakdown voltage and 171 A maximum drain current for high-power switching in motor drives and industrial converters
  • Ultra-low 5.9 mΩ drain-source on-resistance (Rds-on) minimizing conduction losses and heat dissipation in high-current circuits
  • 763 mJ single-pulse avalanche energy rating (Eas) providing robust protection against unclamped inductive switching events in real-world load scenarios

Applications

The IRFP4568PBF is optimized for high-current power switching applications including synchronous motor drives, DC-DC converters, and industrial power supplies operating at up to 150 V. Its extremely low 5.9 mΩ on-resistance reduces I²R conduction losses even at 171 A continuous drain current, making it well suited for high-efficiency inverter bridges and battery management systems. Power supply designers also select this device for server PSUs and solar inverters where thermal performance and rugged avalanche capability are critical.

Specifications

YTEOL0
Avalanche Energy Rating (Eas)763mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min150V
Drain Current-Max (ID)171A
Drain-source On Resistance-Max0.0059Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-247AC
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)517W
Pulsed Drain Current-Max (IDM)684A
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

IRFP4568PBF Datasheet Download

Official datasheet from Infineon

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What drain-source voltage and maximum drain current does the IRFP4568PBF support?

The IRFP4568PBF is rated for a 150 V drain-source breakdown voltage and a maximum continuous drain current of 171 A, positioning it for demanding high-power motor drive, inverter, and DC-DC converter designs where both voltage headroom and high current capacity are required simultaneously.

How does the 5.9 mΩ on-resistance of IRFP4568PBF affect power loss in a motor controller?

At 5.9 mΩ Rds-on, conduction losses at 100 A of drain current are approximately 59 W (P = I² × Rds), which is significantly lower than many comparable 150 V MOSFETs in this package class, enabling smaller heatsinks and higher efficiency in 3-phase motor control bridges operating from 48 V to 100 V bus voltages.

What is the significance of the 763 mJ avalanche energy rating on IRFP4568PBF?

The 763 mJ single-pulse unclamped inductive switching (UIS) avalanche energy rating means the device can safely absorb energy spikes from inductive loads—such as motor windings or transformer leakage inductance—without entering destructive breakdown, improving circuit robustness and reducing the need for external snubber components in unclamped designs.

In what package does the IRFP4568PBF come, and what does that mean for thermal management?

The IRFP4568PBF is packaged in the TO-247AC (TO-247 3-lead) through-hole case, which provides a large exposed drain tab with low thermal resistance to a heatsink, typically in the range of 0.4°C/W junction-to-case, allowing the MOSFET to dissipate the high power levels generated at 171 A without exceeding junction temperature limits when properly heatsinked.

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About Infineon

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AvailabilityIn Stock
Reference Price (USD)
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pcs

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy