IRFBF20SPBF Vishay Integrated Circuit In Stock
Vishay IRFBF20SPBF is an N-channel power MOSFET rated at 900 V and 1.7 A in a 3-pin D2PAK surface-mount package. Features 8 Ω RDS(on) and 180 mJ avalanche energy rating. RoHS-compliant with worldwide shipping.
- Manufacturer
- Vishay
- Package
- —
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- IRFBF20SPBF Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $0.7854(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- High-voltage N-channel MOSFET with 900 V drain-source breakdown voltage for offline power designs
- Avalanche rated with 180 mJ unclamped inductive switching energy for rugged reliability
- Built-in body diode enabling freewheeling in inductive load and flyback topologies
- D2PAK (TO-263) SMD package with drain-tab thermal connection for efficient heat management
- Pb-free construction compliant with RoHS and JESD-609 environmental standards
- Single-device configuration simplifying schematic design in high-voltage switch stages
Applications
The IRFBF20SPBF is designed for high-voltage switching applications including offline flyback converters, switch-mode power supply primary-side switches, and high-voltage motor drive circuits operating from mains-derived rails up to 900 V. Its D2PAK package provides a surface-mount, high-current-capable footprint with good thermal dissipation through the PCB copper pour. The 180 mJ avalanche energy rating adds robustness in designs with residual unclamped inductive energy.
Specifications
| Pbfree Code | Yes |
| Factory Lead Time | 8Weeks |
| YTEOL | 6 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 180mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 900V |
| Drain Current-Max (ID) | 1.7A |
| Drain-source On Resistance-Max | 8Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 54W |
| Pulsed Drain Current-Max (IDM) | 6.8A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What voltage and current ratings define the IRFBF20SPBF's safe operating limits?
The IRFBF20SPBF is rated for a maximum drain-source voltage of 900 V and a continuous drain current of 1.7 A. These parameters suit primary-side switching in offline flyback or forward converters where mains-derived bus voltages and moderate current levels are present in single-switch topologies.
How does the IRFBF20SPBF's avalanche energy specification benefit high-voltage switch designs?
The IRFBF20SPBF is avalanche rated with a 180 mJ unclamped inductive switching energy rating, providing a safety margin when residual energy stored in transformer leakage inductance or parasitic elements causes transient voltage spikes above the 900 V breakdown threshold. This rating improves design robustness without requiring additional clamp circuits in many applications.
Why does the IRFBF20SPBF have a relatively high RDS(on) value, and when is this acceptable?
The IRFBF20SPBF has a maximum RDS(on) of 8 Ω, which is typical for high-voltage MOSFETs due to the fundamental tradeoff between blocking voltage and on-resistance. At 1.7 A rated current the conduction loss is approximately 23 W worst-case, so operation at lower duty cycles or currents well below maximum is advisable to keep dissipation within the D2PAK thermal limits.
What is the lead time for IRFBF20SPBF and how does its D2PAK package aid PCB integration?
The IRFBF20SPBF has a factory lead time of approximately 8 weeks, shorter than many high-voltage discrete devices. The D2PAK (TO-263) package offers a 3-pin surface-mount footprint with the drain connected to the exposed tab, enabling direct soldering to copper thermal pads on the PCB for improved heat dissipation without a separate heatsink in moderate-power designs.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.9000 | $3.90 |
| 10+ | $1.4625 | $14.63 |
| 35+ | $1.2090 | $42.32 |
| 125+ | $0.9750 | $121.88 |
| 300+ | $0.7950 | $238.50 |
| 1000+ | $0.7854 | $785.40 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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