IRF9630 Vishay MOSFET (P-Channel) (Transistor Outline, Vertical) In Stock
Vishay IRF9630 is a single P-channel power MOSFET rated at 200 V drain-source breakdown voltage and 6.5 A continuous drain current with 0.8 Ω on-resistance in a TO-220AB package with built-in body diode. Available in bulk worldwide with fast shipping.
- Manufacturer
- Vishay
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- IRF9630 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 200 V Vds breakdown voltage enables reliable high-side switching on 100 V to 150 V bus rails in industrial power supplies
- 6.5 A continuous drain current (P-channel) supports high-side motor drive and load-switch designs with moderate current requirements
- 500 mJ avalanche energy (Eas) rating provides protection against inductive load transients in relay replacement and motor braking circuits
- TO-220AB package with drain-tab connection facilitates easy heatsink mounting for applications dissipating up to several watts
Applications
The Vishay IRF9630 P-channel MOSFET is used as a high-side switch in 100 V to 150 V DC power supplies, relay replacement circuits, and motor direction control stages where P-channel gate drive simplicity is preferred over N-channel bootstrap drivers. Its 200 V blocking voltage and 6.5 A current rating suit load switching in industrial equipment, lighting dimmers, and battery protection circuits operating on higher-voltage rails. The TO-220AB package allows direct heatsink attachment for thermal management in designs dissipating several watts of switching loss.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 500mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 200V |
| Drain Current-Max (ID) | 6.5A |
| Drain-source On Resistance-Max | 0.8Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 75W |
| Pulsed Drain Current-Max (IDM) | 26A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for IRF9630:
suggested
suggested
Frequently Asked Questions
What are the core voltage and current specifications of the Vishay IRF9630?
The IRF9630 is rated for 200 V maximum drain-source voltage, 6.5 A continuous drain current, and a maximum on-resistance of 0.8 Ω at Vgs = -10 V. These ratings make it suitable for high-side switching on 100 V bus rails in industrial power supplies, lighting controls, and battery management systems where P-channel gate drive convenience is valued.
For a high-side switch at 100 V, how does the IRF9630 compare to using an N-channel MOSFET with a bootstrap driver?
A P-channel device like the IRF9630 is turned on simply by pulling the gate to ground (or source - Vgs = -10 V), eliminating the need for a separate bootstrap capacitor circuit or charge pump required by N-channel high-side configurations. This reduces gate-drive component count and PCB complexity in 100 V to 150 V systems handling up to 6.5 A, at the cost of the higher 0.8 Ω on-resistance compared to equivalent N-channel devices.
How does the 500 mJ avalanche energy rating protect IRF9630 in inductive switching circuits?
The 500 mJ unclamped inductive switching (UIS) rating allows the IRF9630 to safely absorb single-pulse inductive energy transients when the drain voltage exceeds 200 V during turn-off with inductive loads. This is particularly relevant in relay replacement, solenoid drive, and motor braking applications where load inductance can generate voltage spikes of 50 V to 100 V above the supply rail.
What thermal performance can be expected from IRF9630 in a TO-220AB package with heatsink?
The TO-220AB package exposes the drain tab for heatsink mounting, achieving junction-to-case thermal resistance Rth(j-c) of approximately 1.67 °C/W. With a suitable heatsink providing 5 °C/W to ambient at 25 °C, total thermal resistance reaches about 6.67 °C/W, allowing up to 15 W of continuous dissipation before the 150 °C junction temperature limit is reached at typical 6.5 A operation.
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