IRF9630 Vishay MOSFET (P-Channel) (Transistor Outline, Vertical) In Stock

Vishay IRF9630 is a single P-channel power MOSFET rated at 200 V drain-source breakdown voltage and 6.5 A continuous drain current with 0.8 Ω on-resistance in a TO-220AB package with built-in body diode. Available in bulk worldwide with fast shipping.

OBSOLETEMOSFET (P-Channel)Verified Jun 2026
Package / Visual Reference
IRF9630Transistor Outline, Vertical
Quick Facts
Manufacturer
Vishay
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
OBSOLETE
Category
MOSFET (P-Channel)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 200 V Vds breakdown voltage enables reliable high-side switching on 100 V to 150 V bus rails in industrial power supplies
  • 6.5 A continuous drain current (P-channel) supports high-side motor drive and load-switch designs with moderate current requirements
  • 500 mJ avalanche energy (Eas) rating provides protection against inductive load transients in relay replacement and motor braking circuits
  • TO-220AB package with drain-tab connection facilitates easy heatsink mounting for applications dissipating up to several watts

Applications

The Vishay IRF9630 P-channel MOSFET is used as a high-side switch in 100 V to 150 V DC power supplies, relay replacement circuits, and motor direction control stages where P-channel gate drive simplicity is preferred over N-channel bootstrap drivers. Its 200 V blocking voltage and 6.5 A current rating suit load switching in industrial equipment, lighting dimmers, and battery protection circuits operating on higher-voltage rails. The TO-220AB package allows direct heatsink attachment for thermal management in designs dissipating several watts of switching loss.

Specifications

YTEOL0
Avalanche Energy Rating (Eas)500mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200V
Drain Current-Max (ID)6.5A
Drain-source On Resistance-Max0.8Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeP-CHANNEL
Power Dissipation-Max (Abs)75W
Pulsed Drain Current-Max (IDM)26A
Qualification StatusNot Qualified
Surface MountNO
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99

Datasheet

IRF9630 Datasheet Download

Official datasheet from Vishay

Alternate & Equivalent Parts

Compatible alternatives and drop-in replacements for IRF9630:

Frequently Asked Questions

What are the core voltage and current specifications of the Vishay IRF9630?

The IRF9630 is rated for 200 V maximum drain-source voltage, 6.5 A continuous drain current, and a maximum on-resistance of 0.8 Ω at Vgs = -10 V. These ratings make it suitable for high-side switching on 100 V bus rails in industrial power supplies, lighting controls, and battery management systems where P-channel gate drive convenience is valued.

For a high-side switch at 100 V, how does the IRF9630 compare to using an N-channel MOSFET with a bootstrap driver?

A P-channel device like the IRF9630 is turned on simply by pulling the gate to ground (or source - Vgs = -10 V), eliminating the need for a separate bootstrap capacitor circuit or charge pump required by N-channel high-side configurations. This reduces gate-drive component count and PCB complexity in 100 V to 150 V systems handling up to 6.5 A, at the cost of the higher 0.8 Ω on-resistance compared to equivalent N-channel devices.

How does the 500 mJ avalanche energy rating protect IRF9630 in inductive switching circuits?

The 500 mJ unclamped inductive switching (UIS) rating allows the IRF9630 to safely absorb single-pulse inductive energy transients when the drain voltage exceeds 200 V during turn-off with inductive loads. This is particularly relevant in relay replacement, solenoid drive, and motor braking applications where load inductance can generate voltage spikes of 50 V to 100 V above the supply rail.

What thermal performance can be expected from IRF9630 in a TO-220AB package with heatsink?

The TO-220AB package exposes the drain tab for heatsink mounting, achieving junction-to-case thermal resistance Rth(j-c) of approximately 1.67 °C/W. With a suitable heatsink providing 5 °C/W to ambient at 25 °C, total thermal resistance reaches about 6.67 °C/W, allowing up to 15 W of continuous dissipation before the 150 °C junction temperature limit is reached at typical 6.5 A operation.

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About Vishay

Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.

AvailabilityIn Stock
Reference Price (USD)
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Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy