IRF830APBFAlternatives & Equivalent Parts

About IRF830APBF

IRF830APBF is a MOSFET (N-Channel) component manufactured by Vishay. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterIRF830APBFSourceLND150N3-GSTPSC20065WY
ManufacturerVishayMicrochipSTMicroelectronics
Package TypeTransistor Outline, VerticalOtherTransistor Outline, Vertical
Pin Count332
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-40.0°C ~ 175.0°C
Price$0.3900$0.4466$2.9300
StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVE
Electrical Parameters
Pbfree CodeYes
Factory Lead Time8 Weeks6 Weeks25 Weeks
YTEOL5.886
Avalanche Energy Rating (Eas)230 mJ
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE
DS Breakdown Voltage-Min500 V500 V
Drain Current-Max (ID)5 A0.03 A
Drain-source On Resistance-Max1.4 Ω1000 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)4.3 pF1 pF
JEDEC-95 CodeTO-220ABTO-92DO-247
JESD-30 CodeR-PSFM-T3O-PBCY-T3R-PSFM-T2
JESD-609 Codee3e3e3
Number of Elements111
Operating ModeENHANCEMENT MODEDEPLETION MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARROUNDRECTANGULAR
Package StyleFLANGE MOUNTCYLINDRICALFLANGE MOUNT
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNELN-CHANNEL
Power Dissipation-Max (Abs)74 W0.74 W
Pulsed Drain Current-Max (IDM)20 A
Qualification StatusNot QualifiedNot Qualified
Surface MountNONONO
Terminal FinishMATTE TINMatte Tin (Sn)Matte Tin (Sn) - annealed
Terminal FormTHROUGH-HOLETHROUGH-HOLETHROUGH-HOLE
Terminal PositionSINGLEBOTTOMSINGLE
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICON
Manufacturer Package CodeTO-92-3
Power Dissipation Ambient-Max0.74 W
## LND150N3-G Alternates Showing resultsImage
Additional FeatureFREE WHEELING DIODE
ApplicationHIGH VOLTAGE POWER
Diode Element MaterialSILICON CARBIDE
Diode TypeRECTIFIER DIODE
Forward Voltage-Max (VF)1.45 V
Non-rep Pk Forward Current-Max70 A
Number of Phases1
Output Current-Max20 A
Reference StandardAEC-Q101
Rep Pk Reverse Voltage-Max650 V
Reverse Current-Max300 µA
TechnologySCHOTTKY

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 2 alternatives for IRF830APBF — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for IRF830APBF is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating IRF830APBF replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to IRF830APBF?

Known equivalents for IRF830APBF include LND150N3-G, STPSC20065WY. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of IRF830APBF?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify IRF830APBF alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.