IRF7342PBF International Rectifier Transistor (Small Outline Packages) In Stock
International Rectifier IRF7342PBF is a dual P-channel MOSFET in 8-pin SOIC package, rated 55V, 3.4A per channel, with 0.105Ω on-resistance and 114mJ avalanche energy. Available worldwide with fast shipping.
- Manufacturer
- International Rectifier
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- IRF7342PBF Datasheet PDF
- Category
- Transistor
- Price
- From $0.2714(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IRF7342PBF?
- Dual P-channel configuration with 2 separate elements sharing an 8-pin SOIC package
- 55V drain-source breakdown voltage supporting a wide range of power supply designs
- Low 0.105Ω drain-source on-resistance minimizing conduction losses at 3.4A drain current
- 114mJ avalanche energy rating (Eas) for robust protection against inductive switching transients
- Built-in body diode in each channel for integrated freewheeling in switching topologies
What is IRF7342PBF used for?
The IRF7342PBF is widely used in load switching, battery management circuits, and H-bridge motor driver designs where dual P-channel FETs in a compact 8-pin SOIC footprint reduce board space. Its 55V, 3.4A ratings make it suitable for DC-DC converters, power multiplexing, and reverse polarity protection circuits in portable and industrial electronics. The low on-resistance of 0.105Ω ensures efficient power delivery with minimal thermal dissipation in space-constrained designs.
What are the specifications of IRF7342PBF?
| YTEOL | 0 |
| Additional Feature | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) | 114mJ |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55V |
| Drain Current-Max (ID) | 3.4A |
| Drain-source On Resistance-Max | 0.105Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation Ambient-Max | 2W |
| Power Dissipation-Max (Abs) | 2W |
| Pulsed Drain Current-Max (IDM) | 27A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Where can I find the IRF7342PBF datasheet?
IRF7342PBF Datasheet DownloadOfficial datasheet from International Rectifier
What are equivalent replacements for IRF7342PBF?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the voltage and current ratings of the IRF7342PBF, and how do they affect circuit design?
The IRF7342PBF features a 55V drain-source breakdown voltage and a maximum drain current of 3.4A per channel. These ratings allow it to be used in 12V to 48V systems with moderate load currents, including battery switches and motor driver stages where P-channel FETs are preferred for high-side switching.
How does the IRF7342PBF's on-resistance impact efficiency in switching power applications?
With a maximum drain-source on-resistance of 0.105Ω, the IRF7342PBF dissipates approximately 1.2W at 3.4A continuous current, allowing efficient operation without large heatsinks. This low Rds(on) is especially beneficial in dual-channel load switches and battery protection circuits where minimal voltage drop is critical.
Which compact applications benefit from the dual P-channel MOSFET configuration in an 8-pin SOIC?
The dual P-channel configuration in the 8-pin SOIC package is ideal for H-bridge motor control, redundant load switching, and power multiplexing where two independent 55V/3.4A switches are needed in under 30mm² of board space. It simplifies layouts compared to using two discrete P-channel MOSFETs in separate packages.
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Why Buy from FindMyChip
About International Rectifier
International Rectifier is a leading electronic component manufacturer. FindMyChip sources International Rectifier ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
More from International Rectifier
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9500 | $0.95 |
| 5+ | $0.8700 | $4.35 |
| 10+ | $0.8300 | $8.30 |
| 685+ | $0.2934 | $200.98 |
| 890+ | $0.2824 | $251.34 |
| 1110+ | $0.2714 | $301.25 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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