IPW65R080CFDAFKSA1 Infineon MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
IPW65R080CFDAFKSA1 is an Infineon CoolMOS CFD2 high-reliability N-channel power MOSFET rated at 650 V and 43.3 A with a drain-source on-resistance of 80 milliohms maximum and avalanche energy rating of 1160 mJ. Designed for high-efficiency power conversion in a TO-247 vertical package. Available in stock worldwide with fast delivery.
- Manufacturer
- Infineon
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- IPW65R080CFDAFKSA1 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $3.0600(MOQ 1)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IPW65R080CFDAFKSA1?
- 650 V breakdown voltage and 43.3 A drain current with only 80 milliohms (0.08 Ω) maximum RDS(on), delivering superior conduction efficiency for hard-switching PFC and LLC resonant converter topologies
- 1160 mJ avalanche energy rating (Eas) ensuring robust unclamped inductive switching (UIS) survivability in motor drives and industrial power supplies subject to voltage spikes
- Built-in body diode configuration enabling use in full-bridge and half-bridge topologies without an external freewheeling diode, simplifying circuit design
- High-reliability rating and RoHS-compliant (Pbfree) construction meeting stringent quality standards for telecom, solar, and industrial power conversion applications
What is IPW65R080CFDAFKSA1 used for?
IPW65R080CFDAFKSA1 is designed for high-efficiency switch-mode power supplies including PFC boost converters, LLC half-bridge resonant converters, and hard-switching full-bridge topologies operating from 400 V DC bus voltage. Its 650 V rating and 80 milliohm RDS(on) make it ideal for solar inverters (1 kW to 10 kW), EV on-board chargers, and three-phase motor drives where low conduction losses and robust avalanche ruggedness are critical. The device is also used in UPS systems and industrial servo drives that require high-voltage fast-switching power stages.
What are the specifications of IPW65R080CFDAFKSA1?
| Pbfree Code | Yes |
| Factory Lead Time | 15Weeks |
| YTEOL | 6 |
| Additional Feature | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) | 1160mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 43.3A |
| Drain-source On Resistance-Max | 0.08Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 137A |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Finish | Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the IPW65R080CFDAFKSA1 datasheet?
IPW65R080CFDAFKSA1 Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for IPW65R080CFDAFKSA1?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the RDS(on) of IPW65R080CFDAFKSA1 and how does this compare to standard 650 V MOSFETs in PFC converter designs?
IPW65R080CFDAFKSA1 has a maximum drain-source on-resistance of 0.08 Ω (80 milliohms), which is in the lowest tier for 650 V discrete MOSFETs and translates to conduction losses of only 3.46 W at 43.3 A full load, significantly lower than conventional 650 V CoolMOS devices with 120-200 milliohm RDS(on), improving power supply efficiency by 0.5% to 1.5% in a 3 kW PFC stage.
What avalanche energy can IPW65R080CFDAFKSA1 absorb and why does this matter in motor-drive designs?
IPW65R080CFDAFKSA1 is rated for 1160 mJ single-pulse avalanche energy (Eas), meaning it can safely dissipate a 1.16 joule inductive kick from motor winding energy stored in the DC bus inductance before the drain voltage is clamped, providing a significant safety margin in industrial motor drives where load inductance and bus capacitance variations create unpredictable switching transients.
What voltage and current ratings make IPW65R080CFDAFKSA1 suitable for a 3-phase AC mains PFC front end?
With a 650 V minimum drain-source breakdown voltage and 43.3 A maximum drain current, IPW65R080CFDAFKSA1 handles the 400 V rectified peak from a 230 V AC mains input (with over 100 V margin) while conducting up to 43 A peak during the PFC boost switch-on interval, covering single-phase PFC designs up to approximately 8 kW at 0.92 duty cycle.
Is IPW65R080CFDAFKSA1 RoHS compliant and what package does it use for thermal management in a power conversion board?
Yes, IPW65R080CFDAFKSA1 carries a RoHS-compliant (Pbfree Code: Yes) rating and is housed in a TO-247 (transistor outline, vertical) through-hole package, which provides a large exposed metal drain tab for direct mounting to a heatsink with a typical junction-to-case thermal resistance under 0.6°C/W, enabling efficient heat dissipation in high-power conversion boards at continuous switching frequencies up to 100 kHz.
Related Guides
STM32H725IGT3 Selection Guide: Memory, Package, Temperature, and Supply
Choose the right STM32H725 variant by comparing Flash, package, pin count, temperature grade, connectivity, and production requirements.
Aug 1, 2026
STM32H725IGT3 High-Performance MCU Design Guide
Design STM32H725IGT3 systems for reliable 550 MHz operation with practical power, clock, cache, DMA, PCB, ADC, and recovery guidance.
Jul 31, 2026
150141VS73100 Violet SMD LED Selection Guide: Color, Drive, and Sourcing
Select the 150141VS73100 by wavelength, brightness, drive current, 3528 fit, reliability, and traceable sourcing requirements.
Jul 31, 2026
STEF05SGR 5 V eFuse Protection Design Guide
Design a reliable 5 V STEF05SGR eFuse stage with current-limit math, capacitor sizing, thermal analysis, fault recovery, and PCB layout guidance.
Jul 30, 2026
Why Buy from FindMyChip
About Infineon
Infineon is a leading electronic component manufacturer. FindMyChip sources Infineon ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.4731 | $5.47 |
| 100+ | $4.9800 | $498.00 |
| 480+ | $4.4300 | $2126.40 |
| 500+ | $3.4500 | $1725.00 |
| 1000+ | $3.2600 | $3260.00 |
| 10000+ | $3.0600 | $30600.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
AO3416
Alpha & Omega Semiconductors
MOSFET (N-Channel)
2SK3568
Toshiba
MOSFET (N-Channel)
TPWR8004PL,L1Q
Toshiba
MOSFET (N-Channel)
TPW1R005PL,L1Q
Toshiba
MOSFET (N-Channel)
ZXMN3B01FTA
Diodes Inc.
MOSFET (N-Channel)
AO3422
Alpha & Omega Semiconductors
MOSFET (N-Channel)
SI4204DY-T1-GE3
Vishay
MOSFET (N-Channel)
SQ3426AEEV-T1_GE3
Vishay
MOSFET (N-Channel)
PMZB290UNE2
Nexperia
MOSFET (N-Channel)
ZVN4306GVTA
Diodes Inc.
MOSFET (N-Channel)
SIA459EDJ-T1-GE3
Vishay
MOSFET (N-Channel)
NTR3C21NZT1G
ON Semiconductor
MOSFET (N-Channel)
TN2404K-T1-E3
Vishay
MOSFET (N-Channel)
SI2312CDS-T1-GE3
Vishay
MOSFET (N-Channel)
DMN2230UQ-7
Diodes Inc.
MOSFET (N-Channel)
CPH6442-TL-W
ON Semiconductor
MOSFET (N-Channel)
2SK209-BL(TE85L,F)
Toshiba
MOSFET (N-Channel)
IXFH20N100P
IXYS SEMICONDUCTOR
MOSFET (N-Channel)
SI3932DV-T1-GE3
Vishay
MOSFET (N-Channel)
TPW1R306PL,L1Q
Toshiba
MOSFET (N-Channel)
SSM3K56ACT,L3F
Toshiba
MOSFET (N-Channel)
SI4126DY-T1-GE3
Vishay
MOSFET (N-Channel)
AOD4126
Alpha & Omega Semiconductors
MOSFET (N-Channel)
AO3418
Alpha & Omega Semiconductors
MOSFET (N-Channel)