IPW65R080CFDAFKSA1 Infineon MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
IPW65R080CFDAFKSA1 is an Infineon CoolMOS CFD2 high-reliability N-channel power MOSFET rated at 650 V and 43.3 A with a drain-source on-resistance of 80 milliohms maximum and avalanche energy rating of 1160 mJ. Designed for high-efficiency power conversion in a TO-247 vertical package. Available in stock worldwide with fast delivery.
- Manufacturer
- Infineon
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- IPW65R080CFDAFKSA1 Datasheet PDF
- Category
- MOSFET (N-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V breakdown voltage and 43.3 A drain current with only 80 milliohms (0.08 Ω) maximum RDS(on), delivering superior conduction efficiency for hard-switching PFC and LLC resonant converter topologies
- 1160 mJ avalanche energy rating (Eas) ensuring robust unclamped inductive switching (UIS) survivability in motor drives and industrial power supplies subject to voltage spikes
- Built-in body diode configuration enabling use in full-bridge and half-bridge topologies without an external freewheeling diode, simplifying circuit design
- High-reliability rating and RoHS-compliant (Pbfree) construction meeting stringent quality standards for telecom, solar, and industrial power conversion applications
Applications
IPW65R080CFDAFKSA1 is designed for high-efficiency switch-mode power supplies including PFC boost converters, LLC half-bridge resonant converters, and hard-switching full-bridge topologies operating from 400 V DC bus voltage. Its 650 V rating and 80 milliohm RDS(on) make it ideal for solar inverters (1 kW to 10 kW), EV on-board chargers, and three-phase motor drives where low conduction losses and robust avalanche ruggedness are critical. The device is also used in UPS systems and industrial servo drives that require high-voltage fast-switching power stages.
Specifications
| Pbfree Code | Yes |
| Factory Lead Time | 15Weeks |
| YTEOL | 6 |
| Additional Feature | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) | 1160mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 43.3A |
| Drain-source On Resistance-Max | 0.08Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 137A |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Finish | Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the RDS(on) of IPW65R080CFDAFKSA1 and how does this compare to standard 650 V MOSFETs in PFC converter designs?
IPW65R080CFDAFKSA1 has a maximum drain-source on-resistance of 0.08 Ω (80 milliohms), which is in the lowest tier for 650 V discrete MOSFETs and translates to conduction losses of only 3.46 W at 43.3 A full load, significantly lower than conventional 650 V CoolMOS devices with 120-200 milliohm RDS(on), improving power supply efficiency by 0.5% to 1.5% in a 3 kW PFC stage.
What avalanche energy can IPW65R080CFDAFKSA1 absorb and why does this matter in motor-drive designs?
IPW65R080CFDAFKSA1 is rated for 1160 mJ single-pulse avalanche energy (Eas), meaning it can safely dissipate a 1.16 joule inductive kick from motor winding energy stored in the DC bus inductance before the drain voltage is clamped, providing a significant safety margin in industrial motor drives where load inductance and bus capacitance variations create unpredictable switching transients.
What voltage and current ratings make IPW65R080CFDAFKSA1 suitable for a 3-phase AC mains PFC front end?
With a 650 V minimum drain-source breakdown voltage and 43.3 A maximum drain current, IPW65R080CFDAFKSA1 handles the 400 V rectified peak from a 230 V AC mains input (with over 100 V margin) while conducting up to 43 A peak during the PFC boost switch-on interval, covering single-phase PFC designs up to approximately 8 kW at 0.92 duty cycle.
Is IPW65R080CFDAFKSA1 RoHS compliant and what package does it use for thermal management in a power conversion board?
Yes, IPW65R080CFDAFKSA1 carries a RoHS-compliant (Pbfree Code: Yes) rating and is housed in a TO-247 (transistor outline, vertical) through-hole package, which provides a large exposed metal drain tab for direct mounting to a heatsink with a typical junction-to-case thermal resistance under 0.6°C/W, enabling efficient heat dissipation in high-power conversion boards at continuous switching frequencies up to 100 kHz.
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