IPW65R080CFDAFKSA1 Infineon MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

IPW65R080CFDAFKSA1 is an Infineon CoolMOS CFD2 high-reliability N-channel power MOSFET rated at 650 V and 43.3 A with a drain-source on-resistance of 80 milliohms maximum and avalanche energy rating of 1160 mJ. Designed for high-efficiency power conversion in a TO-247 vertical package. Available in stock worldwide with fast delivery.

ACTIVEMOSFET (N-Channel)Verified Jun 2026
Package / Visual Reference
IPW65R080CFDAFKSA1Transistor Outline, Vertical
Quick Facts
Manufacturer
Infineon
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 650 V breakdown voltage and 43.3 A drain current with only 80 milliohms (0.08 Ω) maximum RDS(on), delivering superior conduction efficiency for hard-switching PFC and LLC resonant converter topologies
  • 1160 mJ avalanche energy rating (Eas) ensuring robust unclamped inductive switching (UIS) survivability in motor drives and industrial power supplies subject to voltage spikes
  • Built-in body diode configuration enabling use in full-bridge and half-bridge topologies without an external freewheeling diode, simplifying circuit design
  • High-reliability rating and RoHS-compliant (Pbfree) construction meeting stringent quality standards for telecom, solar, and industrial power conversion applications

Applications

IPW65R080CFDAFKSA1 is designed for high-efficiency switch-mode power supplies including PFC boost converters, LLC half-bridge resonant converters, and hard-switching full-bridge topologies operating from 400 V DC bus voltage. Its 650 V rating and 80 milliohm RDS(on) make it ideal for solar inverters (1 kW to 10 kW), EV on-board chargers, and three-phase motor drives where low conduction losses and robust avalanche ruggedness are critical. The device is also used in UPS systems and industrial servo drives that require high-voltage fast-switching power stages.

Specifications

Pbfree CodeYes
Factory Lead Time15Weeks
YTEOL6
Additional FeatureHIGH RELIABILITY
Avalanche Energy Rating (Eas)1160mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min650V
Drain Current-Max (ID)43.3A
Drain-source On Resistance-Max0.08Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-247
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)137A
Reference StandardAEC-Q101
Surface MountNO
Terminal FinishTin (Sn)
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99

Datasheet

IPW65R080CFDAFKSA1 Datasheet Download

Official datasheet from Infineon

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the RDS(on) of IPW65R080CFDAFKSA1 and how does this compare to standard 650 V MOSFETs in PFC converter designs?

IPW65R080CFDAFKSA1 has a maximum drain-source on-resistance of 0.08 Ω (80 milliohms), which is in the lowest tier for 650 V discrete MOSFETs and translates to conduction losses of only 3.46 W at 43.3 A full load, significantly lower than conventional 650 V CoolMOS devices with 120-200 milliohm RDS(on), improving power supply efficiency by 0.5% to 1.5% in a 3 kW PFC stage.

What avalanche energy can IPW65R080CFDAFKSA1 absorb and why does this matter in motor-drive designs?

IPW65R080CFDAFKSA1 is rated for 1160 mJ single-pulse avalanche energy (Eas), meaning it can safely dissipate a 1.16 joule inductive kick from motor winding energy stored in the DC bus inductance before the drain voltage is clamped, providing a significant safety margin in industrial motor drives where load inductance and bus capacitance variations create unpredictable switching transients.

What voltage and current ratings make IPW65R080CFDAFKSA1 suitable for a 3-phase AC mains PFC front end?

With a 650 V minimum drain-source breakdown voltage and 43.3 A maximum drain current, IPW65R080CFDAFKSA1 handles the 400 V rectified peak from a 230 V AC mains input (with over 100 V margin) while conducting up to 43 A peak during the PFC boost switch-on interval, covering single-phase PFC designs up to approximately 8 kW at 0.92 duty cycle.

Is IPW65R080CFDAFKSA1 RoHS compliant and what package does it use for thermal management in a power conversion board?

Yes, IPW65R080CFDAFKSA1 carries a RoHS-compliant (Pbfree Code: Yes) rating and is housed in a TO-247 (transistor outline, vertical) through-hole package, which provides a large exposed metal drain tab for direct mounting to a heatsink with a typical junction-to-case thermal resistance under 0.6°C/W, enabling efficient heat dissipation in high-power conversion boards at continuous switching frequencies up to 100 kHz.

Related Guides

Why Buy from FindMyChip

Authorized Source
Verified supply chain with full traceability & inspection
$
Competitive Pricing
Factory-direct from China distributors, low MOQ
Fast Shipping
DHL Express 3–5 days · FedEx/UPS 5–7 days worldwide
Quality Guaranteed
30-day replacement for defective parts, no questions asked

About Infineon

Infineon is a leading electronic component manufacturer. FindMyChip sources Infineon ICs directly from authorized China distributors, offering competitive pricing and reliable stock.

AvailabilityIn Stock
Reference Price (USD)
Contact for Price
Buy from 1pc · Factory-direct pricing
pcs

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy