IPU80R1K4P7AKMA1 Infineon MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
Infineon IPU80R1K4P7AKMA1 is a superjunction N-channel MOSFET in IPAK-3 package rated at 800 V breakdown and 4 A drain current, featuring 1.4 Ω on-resistance with built-in body diode for efficient switching in high-voltage power conversion circuits.
- Manufacturer
- Infineon
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- IPU80R1K4P7AKMA1 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 800 V drain-source breakdown voltage for high-voltage power supply and offline converter designs
- Superjunction MOSFET technology delivering low on-resistance of 1.4 Ω at 4 A drain current
- IPAK-3 (DPAK vertical) package with drain-connected case for efficient thermal management on PCB
- Built-in body diode (single configuration) for simplified flyback and buck-boost circuit topologies
- 8 mJ avalanche energy rating (Eas) for robust protection in inductive switching applications
- RoHS compliant and Pb-free for modern power electronics manufacturing
Applications
The IPU80R1K4P7AKMA1 is designed for offline flyback converters, AC-DC power supplies, and PFC circuits operating from mains voltage where an 800 V rated N-channel MOSFET with low on-resistance is needed. Its superjunction technology makes it well-suited for LED driver stages, auxiliary power supplies in industrial equipment, and motor drive applications requiring efficient switching up to 4 A at high voltages.
Specifications
| Pbfree Code | Yes |
| Factory Lead Time | 17Weeks |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 8mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 4A |
| Drain-source On Resistance-Max | 1.4Ω |
| FET Technology | SUPERJUNCTION MOSFET |
| JEDEC-95 Code | TO-251 |
| JESD-30 Code | R-PSIP-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 32W |
| Pulsed Drain Current-Max (IDM) | 8.9A |
| Surface Mount | NO |
| Terminal Finish | Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What voltage and current ratings make IPU80R1K4P7AKMA1 suitable for offline power supply designs?
The IPU80R1K4P7AKMA1 is rated for an 800 V drain-source breakdown voltage and a maximum drain current of 4 A, which directly suits offline flyback converters and AC-DC switching power supplies operating from 85 VAC to 265 VAC mains input.
How does the superjunction MOSFET technology in IPU80R1K4P7AKMA1 improve switching efficiency?
Superjunction technology reduces the specific on-resistance to 1.4 Ω while maintaining the 800 V voltage class, which lowers conduction losses compared to conventional planar MOSFETs and improves overall converter efficiency in PFC stages operating at switching frequencies above 50 kHz.
What is the avalanche energy rating of IPU80R1K4P7AKMA1 and why does it matter for inductive load switching?
The IPU80R1K4P7AKMA1 has an avalanche energy rating (Eas) of 8 mJ, meaning it can absorb inductive energy spikes without damage, which is critical for reliability in flyback converters and motor drives where leakage inductance can cause voltage overshoot above the 800 V rail.
How should engineers plan procurement for IPU80R1K4P7AKMA1 given the current lead time?
With a factory lead time of 17 weeks, procurement teams should initiate purchase orders at least 5 months before production start. Buffer stock of at least 4 weeks of usage is recommended to protect against supply fluctuations for this 800 V superjunction MOSFET.
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