IPD320N20N3GATMA1 Infineon MOSFET (N-Channel) (Other) In Stock
Infineon IPD320N20N3GATMA1 is an N-channel power MOSFET rated at 200 V drain-source breakdown voltage with 34 A maximum drain current and ultra-low 32 mΩ on-resistance in a TO-252 (DPAK) 3-pin package. Features a built-in body diode and 190 mJ avalanche energy rating for robust motor and switching applications; available from stock with worldwide shipping.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- IPD320N20N3GATMA1 Datasheet PDF
- Category
- MOSFET (N-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 200 V drain-source breakdown voltage supports boost converters and motor drive circuits operating from 48 V to 150 V DC bus rails
- 34 A maximum drain current enables high-current switching in motor drives and DC-DC converters without parallel devices
- Ultra-low 32 mΩ on-resistance (RDS(on)) minimizes conduction losses and thermal dissipation at full load
- 190 mJ avalanche energy (Eas) rating ensures robust unclamped inductive switching (UIS) survivability in motor control
- TO-252 (DPAK) SMT package with drain-tab heatsinking simplifies PCB thermal management without external hardware
Applications
The IPD320N20N3GATMA1 is well suited for synchronous and non-synchronous buck converters in 48 V industrial power supplies where the 200 V rating provides comfortable headroom and 32 mΩ on-resistance keeps thermal losses low at 10 A to 30 A loads. Motor drive H-bridge and half-bridge circuits for brushed DC motors operating from 24 V to 100 V supplies benefit from the 34 A current capability and 190 mJ avalanche rating, which protect against inductive kickback during fast switching. Automotive body electronics running from a 12 V or 24 V bus also use this DPAK MOSFET for load switching and reverse polarity protection due to its compact footprint and robust avalanche performance.
Specifications
| Factory Lead Time | 16Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 190mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 200V |
| Drain Current-Max (ID) | 34A |
| Drain-source On Resistance-Max | 0.032Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 136A |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Germany, Malaysia, South Korea |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the on-resistance of the IPD320N20N3GATMA1, and how does that affect efficiency in a 48 V DC motor drive?
The IPD320N20N3GATMA1 has a maximum RDS(on) of 32 mΩ. At 20 A motor current, conduction loss per device is 20² x 0.032 = 12.8 W, and in a TO-252 DPAK package with an FR4 PCB copper pour, this is well within the device's thermal capability. Compared to older 60 mΩ equivalents, the 32 mΩ figure roughly halves conduction loss, improving drive efficiency by 1% to 2% in a full H-bridge at typical load.
What is the avalanche energy rating of the IPD320N20N3GATMA1, and why does it matter for inductive motor loads?
The IPD320N20N3GATMA1 is rated for 190 mJ single-pulse avalanche energy (Eas). When a motor's inductive back-EMF spikes above the 200 V drain-source breakdown, the MOSFET enters avalanche mode and absorbs the stored energy without damage as long as 190 mJ is not exceeded. This rating comfortably handles the commutation spikes in brushed DC motor drives up to approximately 200 W, eliminating the need for external transient voltage suppressors in many designs.
Is the IPD320N20N3GATMA1 in a through-hole or surface-mount package, and how does the TO-252 footprint help PCB thermal management?
The IPD320N20N3GATMA1 uses the TO-252 (DPAK) surface-mount package, which has the drain pad exposed on the underside tab for direct soldering to a copper thermal area on the PCB. A 1 cm² top-side copper pour on 1 oz FR4 provides roughly 30°C/W to 40°C/W junction-to-ambient thermal resistance, sufficient to keep the MOSFET below 150°C junction temperature at 10 W to 12 W continuous dissipation without an additional heatsink.
When would a designer choose the IPD320N20N3GATMA1 over a 100 V MOSFET for a 48 V synchronous buck converter?
A 48 V nominal bus can reach 60 V to 70 V under load transients and 80 V during startup overshoot in some systems. The IPD320N20N3GATMA1 with 200 V breakdown gives a 2.5x derating margin over the operating rail, eliminating drain-source stress failures seen with 80 V devices at 48 V input. The 32 mΩ on-resistance is comparable to best-in-class 100 V N-channel MOSFETs in DPAK, so the efficiency trade-off of choosing the 200 V device is minimal for converters switching at 100 kHz to 300 kHz.
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