IPB65R420CFD Infineon MOSFET (N-Channel) (Other) In Stock
Infineon IPB65R420CFD is a 650 V, 8.7 A N-channel CoolMOS MOSFET with 0.42 ohm Rds(on) in a TO-263 package. Features a built-in fast-recovery diode for PFC and resonant converter applications. Available in stock with worldwide shipping.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 4
- Lifecycle
- OBSOLETE
- Datasheet
- IPB65R420CFD Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V breakdown voltage with 0.42 ohm Rds(on) delivers high-voltage switching capability for SMPS, PFC, and resonant topologies
- Integrated fast-recovery body diode eliminates the need for external freewheeling diodes, reducing BOM cost and improving converter efficiency
- TO-263 (D2PAK) surface mount package offers excellent thermal performance for high-power designs with low junction-to-case thermal resistance
Applications
The IPB65R420CFD is designed for high-voltage power conversion applications including Power Factor Correction (PFC) circuits, LLC resonant converters, and flyback SMPS in industrial and consumer power supplies. With a 650 V breakdown voltage and 8.7 A continuous drain current, it handles demanding switching conditions while the built-in fast-recovery diode reduces reverse recovery losses. The TO-263 package enables efficient PCB-level heat dissipation for power designs in the several-hundred-watt range.
Specifications
| Pbfree Code | No |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 227mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 8.7A |
| Drain-source On Resistance-Max | 0.42Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 27A |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the IPB65R420CFD power MOSFET?
The IPB65R420CFD is rated for 650 V drain-source breakdown voltage and 8.7 A continuous drain current with an Rds(on) of 0.42 ohm, delivering excellent on-state performance for high-voltage power conversion in industrial and consumer SMPS designs.
Why is IPB65R420CFD preferred for PFC converter designs over standard MOSFETs?
IPB65R420CFD is preferred in PFC applications because its built-in fast-recovery diode reduces reverse recovery losses at 650 V switching, while its 0.42 ohm Rds(on) minimizes conduction losses at up to 8.7 A, improving overall converter efficiency in typical designs.
When is IPB65R420CFD a better choice than a higher-current 650 V MOSFET for cost-sensitive power supply designs?
For designs with continuous load currents below 8.7 A, IPB65R420CFD provides an optimal balance of 0.42 ohm Rds(on) and 650 V rating at a lower cost than higher-current variants, making it well-suited for mid-range industrial power supplies and motor drives.
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