IPB65R420CFD Infineon MOSFET (N-Channel) (Other) In Stock

Name: IPB65R420CFD
Brand: Infineon
SKU: IPB65R420CFD
Availability: InStock

Infineon IPB65R420CFD is a 650 V, 8.7 A N-channel CoolMOS MOSFET with 0.42 ohm Rds(on) in a TO-263 package. Features a built-in fast-recovery diode for PFC and resonant converter applications. Available in stock with worldwide shipping.

OBSOLETEMOSFET (N-Channel)Verified Jul 2026

Package / Visual Reference

IPB65R420CFDOther

Quick Facts

Manufacturer: Infineon
Package: Other
Pin Count: 4
Lifecycle: OBSOLETE
Datasheet: IPB65R420CFD Datasheet PDF
Category: MOSFET (N-Channel)
Temp Range: -55.0°C to 150.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of IPB65R420CFD?

650 V breakdown voltage with 0.42 ohm Rds(on) delivers high-voltage switching capability for SMPS, PFC, and resonant topologies
Integrated fast-recovery body diode eliminates the need for external freewheeling diodes, reducing BOM cost and improving converter efficiency
TO-263 (D2PAK) surface mount package offers excellent thermal performance for high-power designs with low junction-to-case thermal resistance

What is IPB65R420CFD used for?

The IPB65R420CFD is designed for high-voltage power conversion applications including Power Factor Correction (PFC) circuits, LLC resonant converters, and flyback SMPS in industrial and consumer power supplies. With a 650 V breakdown voltage and 8.7 A continuous drain current, it handles demanding switching conditions while the built-in fast-recovery diode reduces reverse recovery losses. The TO-263 package enables efficient PCB-level heat dissipation for power designs in the several-hundred-watt range.

What are the specifications of IPB65R420CFD?

Pbfree Code	No
YTEOL	0
Avalanche Energy Rating (Eas)	227mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	650V
Drain Current-Max (ID)	8.7A
Drain-source On Resistance-Max	0.42Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3
Number of Elements	1
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	27A
Surface Mount	YES
Terminal Finish	Tin (Sn)
Terminal Form	GULL WING
Terminal Position	SINGLE
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Package	Other

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
ECCN	EAR99

Where can I find the IPB65R420CFD datasheet?

IPB65R420CFD Datasheet Download

Official datasheet from Infineon

What are equivalent replacements for IPB65R420CFD?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key voltage and current ratings of the IPB65R420CFD power MOSFET?

The IPB65R420CFD is rated for 650 V drain-source breakdown voltage and 8.7 A continuous drain current with an Rds(on) of 0.42 ohm, delivering excellent on-state performance for high-voltage power conversion in industrial and consumer SMPS designs.

Why is IPB65R420CFD preferred for PFC converter designs over standard MOSFETs?

IPB65R420CFD is preferred in PFC applications because its built-in fast-recovery diode reduces reverse recovery losses at 650 V switching, while its 0.42 ohm Rds(on) minimizes conduction losses at up to 8.7 A, improving overall converter efficiency in typical designs.

When is IPB65R420CFD a better choice than a higher-current 650 V MOSFET for cost-sensitive power supply designs?

For designs with continuous load currents below 8.7 A, IPB65R420CFD provides an optimal balance of 0.42 ohm Rds(on) and 650 V rating at a lower cost than higher-current variants, making it well-suited for mid-range industrial power supplies and motor drives.

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