IPB180N10S402ATMA1 Infineon MOSFET (N-Channel) (Other) In Stock
Infineon IPB180N10S402ATMA1 is an N-channel MOSFET rated at 100 V and 180 A with an ultra-low Rds(on) of 2.5 mΩ in a TO-263 package. Ideal for high-current switching in industrial and automotive power stages. Available from authorized distributors with worldwide shipping.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 7
- Lifecycle
- ACTIVE
- Datasheet
- IPB180N10S402ATMA1 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.2800(MOQ 10)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IPB180N10S402ATMA1?
- 100 V drain-source breakdown voltage enables robust operation in industrial and automotive 48 V bus systems
- 180 A maximum drain current supports high-power motor drive and DC-DC converter designs
- Ultra-low Rds(on) of 2.5 mΩ minimizes conduction losses for improved power efficiency
- Built-in body diode with 1110 mJ avalanche energy rating for enhanced ruggedness
- TO-263 surface mount package simplifies thermal management on high-current PCB designs
What is IPB180N10S402ATMA1 used for?
The IPB180N10S402ATMA1 is designed for demanding power conversion applications including synchronous buck converters, motor drives, and battery management systems operating from 12 V to 48 V bus rails. Its 180 A current capability and 2.5 mΩ Rds(on) make it an excellent choice for high-efficiency server power supplies and industrial motor controllers. Automotive-grade variants in this family also target 48 V mild-hybrid powertrains and EV auxiliary drive systems.
What are the specifications of IPB180N10S402ATMA1?
| Factory Lead Time | 9Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 1110mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 180A |
| Drain-source On Resistance-Max | 0.0025Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263 |
| JESD-30 Code | R-PSSO-G6 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 720A |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Germany, Malaysia |
Where can I find the IPB180N10S402ATMA1 datasheet?
IPB180N10S402ATMA1 Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for IPB180N10S402ATMA1?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current of the IPB180N10S402ATMA1 and what load conditions does it support?
The IPB180N10S402ATMA1 supports a maximum drain current of 180 A, enabling it to drive large inductive loads such as motor windings and high-current transformer primaries in 12 V to 48 V power stages. Thermal management via the TO-263 package is essential to sustain this current level continuously.
How does the 2.5 mΩ Rds(on) of IPB180N10S402ATMA1 benefit switching power supply designs?
An Rds(on) of 2.5 mΩ means extremely low conduction losses; at 100 A of continuous drain current, the device dissipates only 25 W due to resistive heating, compared to over 60 W for a typical 6 mΩ device. This directly improves converter efficiency and reduces heatsink requirements.
Which avalanche energy specification should designers check when using IPB180N10S402ATMA1 in unclamped inductive switching circuits?
The device is rated for 1110 mJ of avalanche energy (Eas), providing substantial margin for single-pulse unclamped inductive switching events. For repetitive avalanche scenarios, designers should derate this figure and verify junction temperature stays below 175 °C to preserve long-term reliability.
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Why Buy from FindMyChip
About Infineon
Infineon is a leading electronic component manufacturer. FindMyChip sources Infineon ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $5.1880 | $51.88 |
| 100+ | $1.2800 | $128.00 |
In Stock · 24h Response · Worldwide Shipping
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