IPB083N10N3 G Infineon MOSFET (N-Channel) (Other) In Stock
The Infineon IPB083N10N3 G is an N-channel 100 V, 80 A OptiMOS 3 MOSFET in a TO-263 surface-mount package with a low 8.3 mΩ typical RDS(on) for high-efficiency power switching applications. It delivers minimal conduction losses and fast switching for motor drives, DC-DC converters, and battery management systems. Available worldwide for industrial, automotive, and consumer power electronics designs.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- IPB083N10N3 G Datasheet PDF
- Category
- MOSFET (N-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IPB083N10N3 G?
- 100 V, 80 A rating with 8.3 mΩ RDS(on) at 10 V gate drive for ultra-low conduction losses in high-current power stages
- OptiMOS 3 technology achieves best-in-class RDS(on) × Qg figure of merit for high-frequency DC-DC converter efficiency
- TO-263 surface-mount package provides low-inductance board mounting and excellent PCB thermal coupling for compact high-current designs
What is IPB083N10N3 G used for?
The IPB083N10N3 G is well suited for synchronous rectification in DC-DC buck and boost converters, motor drive H-bridges, and high-current battery management switching stages where low RDS(on) minimizes heat dissipation. Its 100 V blocking voltage and 80 A continuous current capability cover 12 V to 48 V bus power applications in industrial motor controllers, solar MPPT converters, and server power supplies. The TO-263 package couples heat directly to the PCB copper plane, supporting sustained high-current operation in space-constrained designs without additional heatsinking.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Where can I find the IPB083N10N3 G datasheet?
IPB083N10N3 G Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for IPB083N10N3 G?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the 8.3 mΩ RDS(on) of the IPB083N10N3 G impact conduction losses in a 48 V motor drive stage?
At 80 A peak current the IPB083N10N3 G's 8.3 mΩ typical RDS(on) produces conduction losses of only about 53 W (P = I² × R), and at the lower RMS currents of typical PWM motor drives the losses are significantly less. Operating at 100 V with a 10 V gate drive, this low resistance makes it highly efficient in 48 V motor controllers and synchronous rectifier stages where minimizing heat is critical.
Which DC-DC converter topologies benefit most from the OptiMOS 3 technology in the IPB083N10N3 G?
OptiMOS 3 optimizes the product of RDS(on) and total gate charge (Qg), making the IPB083N10N3 G particularly efficient in synchronous buck and full-bridge converters switching at 100 kHz to 300 kHz. The 100 V rating suits 48 V bus converters in telecom rectifiers, industrial power supplies, and on-board chargers where both low switching losses and low conduction losses at 80 A are needed to achieve converter efficiencies above 95%.
What makes the TO-263 package of the IPB083N10N3 G preferable to TO-220 for high-density power PCB layouts?
The TO-263 is a surface-mount package that places the drain tab directly on the PCB copper, enabling thermal dissipation of the 100 V, 80 A device through the board ground plane and eliminating the vertical profile of a through-hole TO-220. This reduces board height by over 10 mm compared to TO-220, allows automated SMT assembly, and improves thermal resistance when large copper pour areas are used, making it better suited for compact power converters and motor controllers.
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