IPAW60R190CEXKSA1 Infineon MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
Infineon IPAW60R190CEXKSA1 is a 600V N-channel CoolMOS MOSFET with 26.7A drain current, 0.19Ω on-resistance, and 418mJ avalanche energy rating in a 3-pin TO-220FP isolated package for high-efficiency power conversion.
- Manufacturer
- Infineon
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- IPAW60R190CEXKSA1 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -40.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V breakdown voltage rating for robust switching in AC-DC power conversion applications
- 26.7A maximum drain current with 0.19Ω RDS(on) for low conduction loss in hard-switching topologies
- 418mJ avalanche energy rating providing excellent ruggedness against voltage transients
- Isolated TO-220FP package allowing direct heatsink mounting without additional isolation pads
- Built-in body diode configuration enabling simplified freewheeling and synchronous rectification designs
Applications
The IPAW60R190CEXKSA1 600V CoolMOS MOSFET is designed for high-efficiency AC-DC power supplies, PFC boost converters, and LLC resonant converters in server power supplies, industrial SMPS, and telecom rectifiers operating from universal AC mains input up to 264VAC. Its 0.19Ω low on-resistance and isolated TO-220FP package make it ideal for flyback converters and half-bridge topologies in solar micro-inverters and EV charging stations where thermal management with direct heatsink contact is required. The 418mJ avalanche ruggedness also makes it suitable for motor drive inverters and industrial power factor correction stages where inductive load switching generates significant voltage spikes.
Specifications
| Pbfree Code | Yes |
| Factory Lead Time | 52Weeks |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 418mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 26.7A |
| Drain-source On Resistance-Max | 0.19Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 34W |
| Pulsed Drain Current-Max (IDM) | 59A |
| Surface Mount | NO |
| Terminal Finish | Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the IPAW60R190CEXKSA1 that determine its switching application suitability?
The IPAW60R190CEXKSA1 features a 600V minimum drain-source breakdown voltage, 26.7A maximum drain current, and 0.19Ω maximum RDS(on). Combined with a 418mJ avalanche energy rating, these specifications make it suitable for hard-switching and resonant power conversion topologies in 230VAC single-phase and 400VAC three-phase industrial power supplies operating at switching frequencies up to hundreds of kilohertz.
How does the isolated TO-220FP package of the IPAW60R190CEXKSA1 simplify heatsink mounting in power supply designs?
The TO-220FP package features an isolated case connection where the metal tab is electrically isolated from the drain terminal, unlike standard TO-220 packages where the tab is connected to the drain. This isolation allows designers to mount the MOSFET directly to a grounded metal heatsink without requiring an additional isolation pad or insulating washer, reducing thermal resistance and simplifying the mechanical assembly of high-power supplies rated at hundreds of watts.
For a 600W AC-DC power supply design using universal AC input, why is the IPAW60R190CEXKSA1 a strong MOSFET candidate?
In a universal AC input (85V to 264VAC) power supply, the DC bus voltage can reach approximately 375V, requiring MOSFET voltage ratings well above this level. The 600V rated IPAW60R190CEXKSA1 provides sufficient safety margin, while its 0.19Ω RDS(on) and 26.7A current rating allow it to handle the 600W load with acceptable conduction losses, and the 418mJ avalanche capability provides ruggedness against voltage spikes inherent in inductive switching topologies without additional clamping circuits.
What is the factory lead time for the IPAW60R190CEXKSA1, and how should procurement teams plan inventory for it?
The factory lead time for the IPAW60R190CEXKSA1 is 52 weeks, which is unusually long and typical of specialty power MOSFETs with automotive-grade or advanced CoolMOS process qualifications. Procurement teams designing new products with this MOSFET should plan stocking buffer inventory of at least 6 to 12 months of consumption and identify qualified alternative 600V MOSFETs with shorter lead times to mitigate supply chain risk during production ramp-up phases.
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