HMC574MS8E Analog Devices Integrated Circuit (Small Outline Packages) In Stock
HMC574MS8E is an Analog Devices GaAs MMIC RF switch in an MSOP-8 package featuring 0.8 dB maximum insertion loss, 36 dBm 1 dB compression point, and 50 Ω characteristic impedance. Its CMOS-compatible control interface and 39 dBm maximum CW input power suit high-power RF switching applications. Available from stock with worldwide shipping.
- Manufacturer
- Analog Devices
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- HMC574MS8E Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 85.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 36 dBm 1 dB compression point and 39 dBm maximum CW input power handle high-power RF signals without gain compression
- 0.8 dB maximum insertion loss preserves signal integrity across the 50 Ω signal path in transmit and receive switching applications
- CMOS-compatible digital control interface enables direct interfacing with 3.3 V or 5 V logic controllers without level translators
- MSOP-8 package provides a compact surface-mount footprint suitable for dense RF PCB layouts with 50 Ω microstrip routing
Applications
HMC574MS8E is designed for high-power RF switching in instrumentation, wireless base station test equipment, and radar front-ends where switching signals up to 39 dBm CW with less than 0.8 dB insertion loss is required. The CMOS-compatible control interface simplifies integration with FPGA or microcontroller-driven transmit/receive switching architectures in 50 Ω systems. Its compact MSOP-8 package suits space-constrained phased array modules and software-defined radio platforms.
Specifications
| Pbfree Code | No |
| Manufacturer Package Code | HRM-8-1 |
| YTEOL | 0 |
| 1dB Compression Point | 36dBm |
| Additional Feature | CMOS COMPATIBLE |
| Characteristic Impedance | 50Ω |
| Construction | COMPONENT |
| Input Power-Max (CW) | 39dBm |
| Insertion Loss-Max | 0.8dB |
| Isolation-Min | 16dB |
| JESD-609 Code | e3 |
| Mounting Feature | SURFACE MOUNT |
| Number of Functions | 1 |
| On Time-Nom | 0.12 µs |
| Operating Frequency-Max | 3000MHz |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | TSSOP8,.19 |
| Port Termination | REFLECTIVE |
| Power Supplies | 5V |
| RF/Microwave Device Type | SPDT |
| Surface Mount | YES |
| Technology | GAAS |
| Terminal Finish | Matte Tin (Sn) |
| VSWR-Max | 1.04 |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.01 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What power handling capability does HMC574MS8E offer, and which high-power RF applications does it support?
HMC574MS8E can handle up to 39 dBm (approximately 8 W) of continuous-wave input power and maintains linear operation up to its 36 dBm 1 dB compression point (approximately 4 W). This power handling makes it suitable for switching the output of medium-power RF amplifiers in test and measurement systems, wireless base station antenna switching, and pulsed radar transmit/receive duplexers where signal levels far exceed what PIN diode or FET switches in smaller packages can tolerate.
How does the 0.8 dB insertion loss of HMC574MS8E affect system link budget in a transmit chain?
A 0.8 dB maximum insertion loss in HMC574MS8E means that every watt of transmit power passing through the switch loses approximately 17%, which in a 36 dBm transmitter reduces the effective radiated power at the antenna port by less than 0.8 dB. For a communications link with a 20 dB fade margin, this switch loss consumes only 4% of that budget, making HMC574MS8E one of the lowest-loss options available in a surface-mount 8-pin package at high power levels.
How does CMOS compatibility simplify the control interface design for HMC574MS8E in a microcontroller-based system?
Because HMC574MS8E is CMOS-compatible, its switching control pins can be driven directly from a 3.3 V or 5 V GPIO output of a microcontroller or FPGA without any additional level-shifting circuit or dedicated RF switch driver IC. This reduces the BOM by at least 2 components per switch and eliminates the signal propagation delay introduced by a level translator, which is critical in radar or time-division duplex systems where switching must complete in less than 100 ns between transmit and receive cycles.
What isolation performance does HMC574MS8E provide, and when is 16 dB minimum isolation sufficient?
HMC574MS8E specifies a minimum isolation of 16 dB between the selected and deselected RF ports. In transmit-receive switching applications, 16 dB isolation is adequate when the receiver's front-end amplifier can tolerate a fraction of the transmitted signal leakage without compression — typically when the transmit power does not exceed 36 dBm and the receiver's 1 dB compression point is above 20 dBm. For systems requiring 30 dB or greater isolation, designers should cascade two HMC574MS8E switches or select a higher-isolation switch with a lower power handling requirement.
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Analog Devices (ADI) is a global leader in high-performance analog, mixed-signal, and digital signal processing integrated circuits used in virtually all types of electronic equipment.
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