FS75R12KT4_B15 Infineon Integrated Circuit (Other) In Stock
Infineon FS75R12KT4_B15 is a 1200 V, 75 A six-element IGBT power module configured as a three-phase bridge with integrated freewheeling diodes and a built-in NTC thermistor for temperature monitoring. It delivers high-efficiency switching performance in an isolated package suitable for demanding industrial power conversion. Available from authorized distributors with worldwide shipping.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 28
- Lifecycle
- ACTIVE
- Datasheet
- FS75R12KT4_B15 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 1200 V collector-emitter voltage and 75 A collector current rating for high-power three-phase motor drive and inverter designs
- Six-element three-phase bridge configuration with integrated freewheeling diodes reduces external component count
- Built-in NTC thermistor enables real-time thermal monitoring and over-temperature protection at the module level
- 20 V gate-emitter voltage rating ensures compatibility with standard IGBT gate driver circuits
Applications
The FS75R12KT4_B15 is engineered for three-phase AC motor drives in industrial variable-frequency drives, pumps, and compressors requiring up to 1200 V and 75 A switching capability. Its complete six-element bridge topology with integrated diodes and thermistor simplifies inverter design and reduces system component count. This module is also used in solar inverters, uninterruptible power supplies, and regenerative braking systems demanding high-power switching efficiency.
Specifications
| Pbfree Code | Yes |
| YTEOL | 5 |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) | 75A |
| Collector-Emitter Voltage-Max | 1200V |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Gate-Emitter Voltage-Max | 20V |
| JESD-30 Code | R-XUFM-X28 |
| Number of Elements | 6 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 385W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 490ns |
| Turn-on Time-Nom (ton) | 185ns |
| VCEsat-Max | 2.15V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Hungary |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the FS75R12KT4_B15?
The FS75R12KT4_B15 features a 1200 V collector-emitter voltage rating and a 75 A maximum collector current, with a gate-emitter voltage limit of 20 V, making it well suited for high-power three-phase inverter and motor drive designs.
Which industrial power conversion systems are best matched to the FS75R12KT4_B15 six-element bridge module?
This 75 A, 1200 V six-element IGBT module targets three-phase AC motor drives in variable-frequency drives, solar inverters, uninterruptible power supplies, and regenerative braking systems where high switching efficiency and integrated diodes reduce external component count.
How does the built-in NTC thermistor in the FS75R12KT4_B15 simplify thermal management in inverter designs?
The integrated NTC thermistor provides a continuous analog temperature signal directly from the module, allowing system controllers to monitor operating conditions and derate output current before junction temperature exceeds safe limits, protecting the 1200 V, 75 A IGBT elements from thermal overload.
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