FOD8342T ON Semiconductor Integrated Circuit (Small Outline Packages) In Stock

FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation; 3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail; 20 kV/µs Minimum Common Mode Rejection; Wide Supply Voltage Range: 10 V to 30 V; Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width Distortion;