FindMyChip
Get Quote

FDMD8560L ON Semiconductor MOSFET (N-Channel) (Other) In Stock

FDMD8560L is a dual N-channel power MOSFET with series-connected elements and body diodes. It offers 60 V breakdown, 93 A current, 3.2 mΩ on-resistance, and 384 mJ avalanche rating. From quote-based supply with worldwide shipping.

OBSOLETEMOSFET (N-Channel)Verified Jul 2026
Package / Visual Reference
FDMD8560LOther
Quick Facts
Manufacturer
ON Semiconductor
Package
Other
Pin Count
11
Lifecycle
OBSOLETE
Datasheet
FDMD8560L Datasheet PDF
Category
MOSFET (N-Channel)
Price
From $0.9309(MOQ 1)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

What are the key features of FDMD8560L?

  • Dual N-channel MOSFET configuration with series-connected center-tap elements
  • 60 V drain-source breakdown voltage for medium-voltage power switching
  • 93 A maximum drain current supports high-current converter stages
  • 3.2 mΩ maximum drain-source on-resistance reduces conduction loss
  • 384 mJ avalanche energy rating for rugged transient handling

What is FDMD8560L used for?

FDMD8560L is used in synchronous rectification, DC/DC converter power stages, motor-control bridges, and battery-powered load switching where low conduction loss is critical. Its 60 V rating, high current capability, and dual-MOSFET configuration support compact high-efficiency power designs.

What are the specifications of FDMD8560L?

Pbfree CodeYes
Manufacturer Package Code483AT
YTEOL0
Avalanche Energy Rating (Eas)384mJ
Case ConnectionDRAIN SOURCE
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60V
Drain Current-Max (ID)93A
Drain-source On Resistance-Max0.0032Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)60pF
JEDEC-95 CodeMO-240AA
JESD-30 CodeR-PDSO-N8
JESD-609 Codee3
Number of Elements2
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)48W
Pulsed Drain Current-Max (IDM)550A
Surface MountYES
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormNO LEAD
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Turn-off Time-Max (toff)110ns
Turn-on Time-Max (ton)61ns
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99

Where can I find the FDMD8560L datasheet?

FDMD8560L Datasheet Download

Official datasheet from ON Semiconductor

What are equivalent replacements for FDMD8560L?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

Which power-stage designs benefit from FDMD8560L's dual MOSFET structure?

The device has 2 N-channel MOSFET elements in a series-connected center-tap configuration, making it useful for compact converter, bridge, and synchronous-rectifier layouts.

How much voltage and current margin does FDMD8560L provide?

FDMD8560L is specified with a 60 V minimum drain-source breakdown voltage and 93 A maximum drain current, supporting high-current low-voltage power rails.

Why is the on-resistance important when comparing this MOSFET to alternatives?

The listed maximum drain-source on-resistance is 0.0032 ohm, so conduction losses can be lower than higher-resistance MOSFETs at comparable load current.

What reliability checks should buyers make for obsolete FDMD8560L stock?

Because the part is marked obsolete, buyers should verify lot traceability, moisture handling, and the 384 mJ avalanche rating before approving replacement inventory.

Why Buy from FindMyChip

Authorized Source
Verified supply chain with full traceability & inspection
Competitive Pricing
Factory-direct from China distributors, low MOQ
Fast Shipping
DHL Express 3–5 days · FedEx/UPS 5–7 days worldwide
Quality Guaranteed
30-day replacement for defective parts, no questions asked

About ON Semiconductor

ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.

View all ON Semiconductor parts →
AvailabilityIn Stock
Reference Price (USD)
From $0.9309
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$1.0181$1.02
10+$0.9768$9.77
100+$0.9309$93.09
pcs
Unit price: $1.0181 · Total: $1.02

In Stock · 24h Response · Worldwide Shipping

Direct Contact
WhatsApp InquiryEmail RFQ
Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

“FindMyChip sourced our entire STM32 BOM in 48 hours when our usual distributor had 16-week lead times.”

TM
Thomas Mueller
Hardware Lead, SensorTech GmbH, Germany

You May Also Like

AO3416

Alpha & Omega Semiconductors

MOSFET (N-Channel)

2SK3568

Toshiba

MOSFET (N-Channel)

BSS139 H6327

Infineon

MOSFET (N-Channel)

TPWR8004PL,L1Q

Toshiba

MOSFET (N-Channel)

TPW1R005PL,L1Q

Toshiba

MOSFET (N-Channel)

ZXMN3B01FTA

Diodes Inc.

MOSFET (N-Channel)

AO3422

Alpha & Omega Semiconductors

MOSFET (N-Channel)

SI4204DY-T1-GE3

Vishay

MOSFET (N-Channel)

IRLML2402TRPBF

Infineon

MOSFET (N-Channel)

IRLML2803TRPBF

Infineon

MOSFET (N-Channel)

IRF7607TRPBF

Infineon

MOSFET (N-Channel)

IPD530N15N3GATMA1

Infineon

MOSFET (N-Channel)

BSZ520N15NS3GATMA1

Infineon

MOSFET (N-Channel)

BSC360N15NS3GATMA1

Infineon

MOSFET (N-Channel)

SQ3426AEEV-T1_GE3

Vishay

MOSFET (N-Channel)

IPI041N12N3 G

Infineon

MOSFET (N-Channel)

PMZB290UNE2

Nexperia

MOSFET (N-Channel)

ZVN4306GVTA

Diodes Inc.

MOSFET (N-Channel)

SIA459EDJ-T1-GE3

Vishay

MOSFET (N-Channel)

TN2404K-T1-E3

Vishay

MOSFET (N-Channel)

SI2312CDS-T1-GE3

Vishay

MOSFET (N-Channel)

DMN2230UQ-7

Diodes Inc.

MOSFET (N-Channel)

BF998E6327HTSA1

Infineon

MOSFET (N-Channel)

2SK209-BL(TE85L,F)

Toshiba

MOSFET (N-Channel)