FDMD8260LET60 ON Semiconductor MOSFET (N-Channel) (Other) In Stock
FDMD8260LET60 is a ON Semiconductor mOSFET (N-Channel). It offers 100V, 21A, 20mΩ, PQFN-12 packaging for 14-pin PQFN-12 designs. From $0.00 in stock worldwide shipping.
- Manufacturer
- ON Semiconductor
- Package
- Other
- Pin Count
- 14
- Lifecycle
- OBSOLETE
- Datasheet
- FDMD8260LET60 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.1288(MOQ 25)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- ON Semiconductor mOSFET (N-Channel) selected for industrial electronics applications
- 14-pin PQFN-12 format supports practical PCB assembly and sourcing review
- 100V rating/detail available for engineering comparison
- 21A parameter helps validate alternates and operating margin
- 20mΩ specification supports controlled BOM qualification
Applications
FDMD8260LET60 is used in industrial electronics, replacement sourcing, repair programs, and production BOM continuity where a mOSFET (N-Channel) must match documented board-level requirements. It is suitable for replacement sourcing and production builds that need 100V with the 14-pin PQFN-12 format. Buyers commonly check it for BOM continuity, repair programs, and alternate approval.
Specifications
| Pbfree Code | Yes |
| Manufacturer Package Code | 483BN |
| Factory Lead Time | 4Weeks |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 181mJ |
| Case Connection | DRAIN SOURCE |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 67A |
| Drain-source On Resistance-Max | 0.0058Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 50pF |
| JESD-30 Code | R-PDSO-N12 |
| JESD-609 Code | e3 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 44W |
| Pulsed Drain Current-Max (IDM) | 304A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 94ns |
| Turn-on Time-Max (ton) | 41ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Philippines |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Which design conditions make FDMD8260LET60 a suitable mOSFET (N-Channel) choice?
Use FDMD8260LET60 when the design needs a mOSFET (N-Channel) with 100V. The listed ON Semiconductor context makes it suitable for controlled BOM sourcing and electrical fit checks.
How should buyers verify package fit for FDMD8260LET60?
For package review, confirm the 14-pin PQFN-12 format and 100V against the PCB footprint before release. This helps prevent substitution errors during SMT assembly or repair sourcing.
What should procurement compare before approving an alternate to FDMD8260LET60?
Before approving an alternate, keep 100V, 14-pin PQFN-12, lifecycle status, and compliance assumptions aligned. Buyers should also verify date-code, lot, and test-document requirements for each order.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 25+ | $4.9100 | $122.75 |
| 82+ | $3.6800 | $301.76 |
| 100+ | $1.1653 | $116.53 |
| 500+ | $1.1537 | $576.85 |
| 3000+ | $1.1288 | $3386.40 |
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